Inventor · disambiguated record
Jon-Hsu Ho
Also filed as: HO JON-HSU
33 granted patents·9 pending applications·224 citations·filing 2011–2025
96Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD37TAIWAN SEMICONDUCTOR MFG2HO JON-HSU1WANG CHIH-CHING1WU ZHIQIANG1
Top patents by PatentIndex Score
42 records- 0198US10290546B2Threshold voltage adjustment for a gate-all-around semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 14, 2019·131 cites·20 claims
- 0296US8890207B2FinFET design controlling channel thicknessWU ZHIQIANG·Filed 2011·Granted Nov 18, 2014·39 cites·22 claims
- 0394US8765533B2Fin-like field effect transistor (FinFET) channel profile engineering method and associated deviceTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Jul 1, 2014·21 cites·20 claims
- 0493US10846456B2Integrated circuit modeling methods and systemsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 24, 2020·9 cites·20 claims
- 0588US11621343B2Method of manufacturing semiconductor devices and semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 4, 2023·1 cites·20 claims
- 0688US11101360B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 24, 2021·4 cites·20 claims
- 0787US10438851B2Threshold voltage adjustment for a gate-all-around semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 8, 2019·3 cites·20 claims
- 0886US12218214B2Source/drain silicide for multigate device performance and method of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 4, 2025·1 cites·20 claims
- 0986US2025328719A1Integrated circuit device design systemTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1085US12317526B2Multi-gate devices and fabricating the same with etch rate modulationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 27, 2025·0 cites·20 claims
- 1184US2025324719A1Source/drain silicide for multigate device performance and method of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1283US11616151B2Channel configuration for improving multigate device performance and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 28, 2023·1 cites·20 claims
- 1383US2024322011A1Method of manufacturing semiconductor devices and semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1483US2025287633A1Multi-gate devices and fabricating the same with etch rate modulationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1582US12040381B2Method of manufacturing semiconductor devices and semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 16, 2024·0 cites·20 claims
- 1682US8981479B2Multi-gate semiconductor devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Mar 17, 2015·5 cites·20 claims
- 1781US12361199B2Integrated circuit layout generation methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 15, 2025·0 cites·20 claims
- 1880US12396240B2Source/drain silicide for multigate device performance and method of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 19, 2025·0 cites·20 claims
- 1979US9318322B2FinFET design controlling channel thicknessTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Apr 19, 2016·3 cites·20 claims
- 2079US2024395808A1Semiconductor device structure incorporating air gapTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2177US12125848B2Semiconductor device structure incorporating air gapTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 22, 2024·0 cites·20 claims
- 2276US11949001B2Multi-gate devices and fabricating the same with etch rate modulationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 2, 2024·0 cites·20 claims
- 2375US11907636B2Integrated circuit layout generation methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 20, 2024·0 cites·20 claims
- 2475US2025275189A1Channel Configuration for Improving Multigate Device Performance and Method of Fabrication ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2574US11392749B2Integrated circuit layout generation method and systemTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 19, 2022·0 cites·20 claims
- 2673US9373620B2Series connected transistor structure and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jun 21, 2016·2 cites·17 claims
- 2773US2022367612A1Semiconductor device having nanosheet transistor and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 2872US8623716B2Multi-gate semiconductor devices and methods of forming the sameWANG CHIH-CHING·Filed 2011·Granted Jan 7, 2014·3 cites·20 claims
- 2970US11626400B2Semiconductor device structure incorporating air gapTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 11, 2023·0 cites·20 claims
- 3070US11508807B2Semiconductor device having nanosheet transistor and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 22, 2022·0 cites·20 claims
- 3170US11282943B2Multi-gate devices and fabricating the same with etch rate modulationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 22, 2022·0 cites·16 claims
- 3269US12300754B2Channel configurations with stacked segments for gate-all-around based devices and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 13, 2025·0 cites·20 claims
- 3366US11069791B2Method of manufacturing semiconductor devices and semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 20, 2021·0 cites·20 claims
- 3465US11043423B2Threshold voltage adjustment for a gate-all-around semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 22, 2021·0 cites·20 claims
- 3557US2025241041A1Semiconductor structure and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3656US9711596B2Semiconductor device including a semiconductor sheet interconnecting a source region and a drain regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jul 18, 2017·0 cites·20 claims
- 3755US8987824B2Multi-gate semiconductor devicesHO JON-HSU·Filed 2011·Granted Mar 24, 2015·1 cites·20 claims
- 3854US10367063B2Semiconductor device including a semiconductor sheet interconnecting a source region and a drain regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 30, 2019·0 cites·20 claims
- 3954US2024154015A1Semiconductor device with backside interconnection and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4053US11908919B2Multi-gate devices with multi-layer inner spacers and fabrication methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 20, 2024·0 cites·20 claims
- 4152US9620500B2Series-connected transistor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 11, 2017·0 cites·20 claims
- 4248US9502409B2Multi-gate semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 22, 2016·0 cites·19 claims
Join the waitlist — get patent alerts
Get an alert when Jon-Hsu Ho files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →