Inventor · disambiguated record
Joon Goo Hong
Also filed as: HONG JOON · HONG JOON GOO
47 granted patents·7 pending applications·374 citations·filing 2011–2024
97Inventor score
Top patents by PatentIndex Score
54 records- 0199US10008583B1Gate-all-around nanosheet field-effect transistors and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jun 26, 2018·78 cites·9 claims
- 0299US9570395B1Semiconductor device having buried power railSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Feb 14, 2017·94 cites·20 claims
- 0398US10026652B2Horizontal nanosheet FETs and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jul 17, 2018·21 cites·13 claims
- 0498US9711414B2Strained stacked nanosheet FETS and/or quantum well stacked nanosheetSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jul 18, 2017·32 cites·30 claims
- 0597US9601586B1Methods of forming semiconductor devices, including forming a metal layer on source/drain regionsSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Mar 21, 2017·18 cites·20 claims
- 0696US10886224B2Power distribution network using buried power railSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jan 5, 2021·17 cites·18 claims
- 0795US9905672B2Method of forming internal dielectric spacers for horizontal nanosheet FET architecturesSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Feb 27, 2018·14 cites·19 claims
- 0895US9685564B2Gate-all-around field effect transistors with horizontal nanosheet conductive channel structures for MOL/inter-channel spacing and related cell architecturesSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jun 20, 2017·13 cites·20 claims
- 0994US10811415B2Semiconductor device and method for making the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Oct 20, 2020·10 cites·20 claims
- 1093US9653287B2S/D connection to individual channel layers in a nanosheet FETSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted May 16, 2017·11 cites·16 claims
- 1192US10985103B2Apparatus and method of forming backside buried conductor in integrated circuitSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Apr 20, 2021·8 cites·20 claims
- 1292US10164121B2Stacked independently contacted field effect transistor having electrically separated first and second gatesSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Dec 25, 2018·8 cites·8 claims
- 1389US9899529B2Method to make self-aligned vertical field effect transistorSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Feb 20, 2018·5 cites·18 claims
- 1488US9978833B2Methods for varied strain on nano-scale field effect transistor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted May 22, 2018·5 cites·18 claims
- 1587US10910313B2Integrated circuit including field effect transistors having a contact on active gate compatible with a small cell area having a small contacted poly pitchSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Feb 2, 2021·5 cites·12 claims
- 1687US8716117B2Semiconductor device and method of forming the sameKIM MYEONGCHEOL·Filed 2011·Granted May 6, 2014·10 cites·28 claims
- 1785US11101320B2System and method for efficient enhancement of an on/off ratio of a bitcell based on 3T2R binary weight cell with spin orbit torque MJTs (SOT-MTJs)SAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Aug 24, 2021·1 cites·19 claims
- 1884US11552067B2Semiconductor cell blocks having non-integer multiple of cell heightsSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jan 10, 2023·2 cites·7 claims
- 1984US11461620B2Multi-bit, SoC-compatible neuromorphic weight cell using ferroelectric FETsSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Oct 4, 2022·5 cites·14 claims
- 2084US10586738B2Method of providing source and drain doping for CMOS architecture including FinFET and semiconductor devices so formedSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Mar 10, 2020·3 cites·24 claims
- 2180US10312152B2Field effect transistor with stacked nanowire-like channels and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jun 4, 2019·2 cites·20 claims
- 2277US10381315B2Method and system for providing a reverse-engineering resistant hardware embedded security moduleSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Aug 13, 2019·2 cites·20 claims
- 2376US10727297B2Complimentary metal-oxide-semiconductor circuit having transistors with different threshold voltages and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jul 28, 2020·2 cites·16 claims
- 2474US10497719B2Method for selectively increasing silicon fin area for vertical field effect transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Dec 3, 2019·1 cites·10 claims
- 2573US11233008B2Method of manufacturing an integrated circuit with buried power railSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jan 25, 2022·1 cites·10 claims
- 2673US10930768B2Low current leakage finFET and methods of making the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Feb 23, 2021·1 cites·21 claims
- 2773US2024379653A1Semiconductor cell blocks having non-integer multiple of cell heightsSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2872US11727258B2Multi-bit, SoC-compatible neuromorphic weight cell using ferroelectric FETsSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Aug 15, 2023·0 cites·18 claims
- 2971US12230570B2Integrated circuit with buried power rail and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Feb 18, 2025·0 cites·16 claims
- 3070US12080703B2Semiconductor cell blocks having non-integer multiple of cell heightsSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Sep 3, 2024·0 cites·14 claims
- 3170US10861950B2Integrated circuit including field effect transistors having a contact on active gate compatible with a small cell area having a small contacted poly pitchSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Dec 8, 2020·1 cites·16 claims
- 3268US9871139B2Sacrificial epitaxial gate stressorsSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jan 16, 2018·1 cites·20 claims
- 3367US9614002B10T bi-directional memory cellSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Apr 4, 2017·2 cites·20 claims
- 3466US10181527B2FinFet having dual vertical spacer and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jan 15, 2019·1 cites·8 claims
- 3564US10644031B2Method for selectively increasing silicon fin area for vertical field effect transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted May 5, 2020·0 cites·3 claims
- 3659US11556768B2Optimization of sparsified neural network layers for semi-digital crossbar architecturesSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jan 17, 2023·0 cites·20 claims
- 3759US11475933B2Variation mitigation scheme for semi-digital mac array with a 2T-2 resistive memory element bitcellSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Oct 18, 2022·0 cites·18 claims
- 3858US2025372384A1Self-aligned gate cutINTEL CORP·Filed 2024·Application pending·0 cites
- 3958US2025374619A1Gated subfin reduction techniques in nanoribbon-based transistorsINTEL CORP·Filed 2024·Application pending·0 cites
- 4057US10916513B2Method and system for providing a reverse engineering resistant hardware embedded security moduleSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Feb 9, 2021·0 cites·20 claims
- 4156US11211493B2Apparatus and method of modulating threshold voltage for fin field effect transistor (FinFET) and nanosheet FETSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Dec 28, 2021·0 cites·6 claims
- 4254US11182686B24T4R ternary weight cell with high on/off ratio backgroundSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Nov 23, 2021·0 cites·20 claims
- 4351US10957786B2FinFET with reduced extension resistance and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Mar 23, 2021·0 cites·21 claims
- 4451US2025311332A1Integrated circuit structures having uniform grid metal gate and trench contact cut plugged with air gap structureINTEL CORP·Filed 2024·Application pending·0 cites
- 4550US2014210017A1Semiconductor device and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Application pending·0 cites
- 4648US11581423B2Integrated circuit devices including an element having a non-linear shaped upper surface and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Feb 14, 2023·0 cites·19 claims
- 4748US11217392B2Composite piezoelectric capacitorSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jan 4, 2022·0 cites·7 claims
- 4848US10825723B2Semiconductor device and method for making the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Nov 3, 2020·0 cites·18 claims
- 4947US10872662B22T2R binary weight cell with high on/off ratio backgroundSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Dec 22, 2020·0 cites·20 claims
- 5047US10868193B2Nanosheet field effect transistor cell architectureSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Dec 15, 2020·0 cites·20 claims
Showing the top 50 of 54 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →