Inventor · disambiguated record
John P. Hummel
Also filed as: HUMMEL JOHN · HUMMEL JOHN P · HUMMEL JOHN PATRICK
28 granted patents·2 pending applications·1,705 citations·filing 1996–2009
98Inventor score
Top patents by PatentIndex Score
30 records- 0198US6184121B1Chip interconnect wiring structure with low dielectric constant insulator and methods for fabricating the sameIBM·Filed 1998·Granted Feb 6, 2001·369 cites·39 claims
- 0298US6140226ADual damascene processing for semiconductor chip interconnectsIBM·Filed 1998·Granted Oct 31, 2000·363 cites·48 claims
- 0396US6551924B1Post metalization chem-mech polishing dielectric etchIBM·Filed 1999·Granted Apr 22, 2003·248 cites·29 claims
- 0496US6448176B1Dual damascene processing for semiconductor chip interconnectsIBM·Filed 2000·Granted Sep 10, 2002·102 cites·5 claims
- 0593US7531367B2Utilizing sidewall spacer features to form magnetic tunnel junctions in an integrated circuitIBM·Filed 2006·Granted May 12, 2009·24 cites·1 claims
- 0693US6577011B1Chip interconnect wiring structure with low dielectric constant insulator and methods for fabricating the sameIBM·Filed 2000·Granted Jun 10, 2003·86 cites·16 claims
- 0789US6743642B2Bilayer CMP process to improve surface roughness of magnetic stack in MRAM technologyIBM·Filed 2002·Granted Jun 1, 2004·37 cites·10 claims
- 0888US6985384B2Spacer integration scheme in MRAM technologyIBM·Filed 2002·Granted Jan 10, 2006·41 cites·10 claims
- 0988US6255217B1Plasma treatment to enhance inorganic dielectric adhesion to copperIBM·Filed 1999·Granted Jul 3, 2001·78 cites·18 claims
- 1083US7097777B2Magnetic switching deviceIBM·Filed 2005·Granted Aug 29, 2006·9 cites·16 claims
- 1183US6423566B1Moisture and ion barrier for protection of devices and interconnect structuresIBM·Filed 2000·Granted Jul 23, 2002·28 cites·10 claims
- 1282US7608538B2Formation of vertical devices by electroplatingIBM·Filed 2007·Granted Oct 27, 2009·7 cites·16 claims
- 1381US5976710ALow TCE polyimides as improved insulator in multilayer interconnect structuresIBM·Filed 1997·Granted Nov 2, 1999·72 cites·31 claims
- 1475US7087438B2Encapsulation of conductive lines of semiconductor devicesIBM·Filed 2004·Granted Aug 8, 2006·18 cites·22 claims
- 1575US6261951B1Plasma treatment to enhance inorganic dielectric adhesion to copperIBM·Filed 1999·Granted Jul 17, 2001·34 cites·19 claims
- 1674US6933204B2Method for improved alignment of magnetic tunnel junction elementsIBM·Filed 2003·Granted Aug 23, 2005·21 cites·15 claims
- 1774US6130472AMoisture and ion barrier for protection of devices and interconnect structuresIBM·Filed 1998·Granted Oct 10, 2000·38 cites·8 claims
- 1872US7803639B2Method of forming vertical contacts in integrated circuitsIBM·Filed 2007·Granted Sep 28, 2010·5 cites·16 claims
- 1972US6593660B2Plasma treatment to enhance inorganic dielectric adhesion to copperIBM·Filed 2001·Granted Jul 15, 2003·11 cites·12 claims
- 2071US6680500B1Insulating cap layer and conductive cap layer for semiconductor devices with magnetic material layersINFINEON TECHNOLOGIES AG·Filed 2002·Granted Jan 20, 2004·18 cites·11 claims
- 2166US6221780B1Dual damascene flowable oxide insulation structure and metallic barrierIBM·Filed 1999·Granted Apr 24, 2001·27 cites·26 claims
- 2263US5962113AIntegrated circuit device and process for its manufactureIBM·Filed 1996·Granted Oct 5, 1999·30 cites·12 claims
- 2360US6727589B2Dual damascene flowable oxide insulation structure and metallic barrierIBM·Filed 2000·Granted Apr 27, 2004·6 cites·24 claims
- 2457US8247905B2Formation of vertical devices by electroplatingDELIGIANNI HARIKLIA·Filed 2009·Granted Aug 21, 2012·0 cites·13 claims
- 2553US2008211055A1Utilizing Sidewall Spacer Features to Form Magnetic Tunnel Junctions in an Integrated CircuitIBM·Filed 2008·Application pending·0 cites
- 2652US6479884B2Interim oxidation of silsesquioxane dielectric for dual damascene processIBM·Filed 2001·Granted Nov 12, 2002·4 cites·4 claims
- 2748US6348736B1In situ formation of protective layer on silsesquioxane dielectric for dual damascene processIBM·Filed 1999·Granted Feb 19, 2002·13 cites·14 claims
- 2845US6329280B1Interim oxidation of silsesquioxane dielectric for dual damascene processIBM·Filed 1999·Granted Dec 11, 2001·10 cites·18 claims
- 2942US2004084400A1Patterning metal stack layers of magnetic switching device, utilizing a bilayer metal hardmaskFiled 2002·Application pending·0 cites
- 3037US5633034AProcess for forming a circuit assemblyIBM·Filed 1996·Granted May 27, 1997·6 cites·3 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →