Inventor · disambiguated record
Jong Mun Kim
Also filed as: KIM JONG M · KIM JONG MUN
22 granted patents·17 pending applications·56 citations·filing 2006–2025
92Inventor score
Top patents by PatentIndex Score
39 records- 0191US8187415B2Plasma etch reactor with distribution of etch gases across a wafer surface and a polymer oxidizing gas in an independently fed center gas zoneKIM JONG MUN·Filed 2006·Granted May 29, 2012·20 cites·9 claims
- 0287US9269587B2Methods for etching materials using synchronized RF pulsesAPPLIED MATERIALS INC·Filed 2013·Granted Feb 23, 2016·8 cites·19 claims
- 0386US9909213B2Recursive pumping for symmetrical gas exhaust to control critical dimension uniformity in plasma reactorsAPPLIED MATERIALS INC·Filed 2014·Granted Mar 6, 2018·3 cites·19 claims
- 0482US7807064B2Halogen-free amorphous carbon mask etch having high selectivity to photoresistAPPLIED MATERIALS INC·Filed 2007·Granted Oct 5, 2010·8 cites·17 claims
- 0581US8603921B2Maintaining mask integrity to form openings in wafersSHIMIZU DAISUKE·Filed 2011·Granted Dec 10, 2013·4 cites·13 claims
- 0674US12201030B2Spin-orbit torque MRAM structure and manufacture thereofAPPLIED MATERIALS INC·Filed 2023·Granted Jan 14, 2025·0 cites·3 claims
- 0774US10685849B1Damage free metal conductor formationAPPLIED MATERIALS INC·Filed 2019·Granted Jun 16, 2020·1 cites·20 claims
- 0874US9129911B2Boron-doped carbon-based hardmask etch processingDOAN KENNY LINH·Filed 2014·Granted Sep 8, 2015·3 cites·18 claims
- 0972US8778207B2Plasma etch processes for boron-doped carbonaceous mask layersKIM JONG MUN·Filed 2012·Granted Jul 15, 2014·3 cites·20 claims
- 1069US9748366B2Etching oxide-nitride stacks using C4F6H2APPLIED MATERIALS INC·Filed 2014·Granted Aug 29, 2017·2 cites·20 claims
- 1167US2018142354A1Recursive pumping for symmetrical gas exhaust to control critical dimension uniformity in plasma reactorsAPPLIED MATERIALS INC·Filed 2018·Application pending·0 cites
- 1266US9589832B2Maintaining mask integrity to form openings in wafersAPPLIED MATERIALS INC·Filed 2013·Granted Mar 7, 2017·1 cites·15 claims
- 1366US8668837B2Method for etching substrateDOAN KENNY LINH·Filed 2012·Granted Mar 11, 2014·2 cites·9 claims
- 1464US11289342B2Damage free metal conductor formationAPPLIED MATERIALS INC·Filed 2020·Granted Mar 29, 2022·0 cites·20 claims
- 1564US2025374531A1Memory connection with oxide-nitride-silicon (onp) schemeAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 1663US11384428B2Carbon layer covered mask in 3D applicationsAPPLIED MATERIALS INC·Filed 2020·Granted Jul 12, 2022·0 cites·20 claims
- 1762US11723283B2Spin-orbit torque MRAM structure and manufacture thereofAPPLIED MATERIALS INC·Filed 2020·Granted Aug 8, 2023·0 cites·10 claims
- 1862US9305804B2Plasma etch processes for opening mask layersAPPLIED MATERIALS INC·Filed 2014·Granted Apr 5, 2016·1 cites·20 claims
- 1960US11145808B2Methods for etching a structure for MRAM applicationsAPPLIED MATERIALS INC·Filed 2019·Granted Oct 12, 2021·0 cites·19 claims
- 2059US2024321641A1Fabrication of high aspect ratio electronic devices with minimal sidewall spacer lossAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 2159US2025253156A1Deposition and etching for selective removal of deposited dielectric film from tops of finsAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 2256US9299574B2Silicon dioxide-polysilicon multi-layered stack etching with plasma etch chamber employing non-corrosive etchantsAPPLIED MATERIALS INC·Filed 2014·Granted Mar 29, 2016·0 cites·12 claims
- 2356US2024249936A1Methods for reducing micro and macro scalloping on semiconductor devicesAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 2453US10964527B2Residual removalAPPLIED MATERIALS INC·Filed 2019·Granted Mar 30, 2021·0 cites·19 claims
- 2553US2008286979A1Method of controlling sidewall profile by using intermittent, periodic introduction of cleaning species into the main plasma etching speciesAPPLIED MATERIALS INC·Filed 2008·Application pending·0 cites
- 2652US10957548B2Method of etching copper indium gallium selenide (CIGS) materialAPPLIED MATERIALS INC·Filed 2019·Granted Mar 23, 2021·0 cites·20 claims
- 2752US2025254969A1Control of silicon nitride topology at trench bottomAPPLIED MATERIALS INC·Filed 2025·Application pending·0 cites
- 2849US10692734B2Methods of patterning nickel silicide layers on a semiconductor deviceAPPLIED MATERIALS INC·Filed 2018·Granted Jun 23, 2020·0 cites·20 claims
- 2949US2007243714A1Method of controlling silicon-containing polymer build up during etching by using a periodic cleaning stepAPPLIED MATERIALS INC·Filed 2006·Application pending·0 cites
- 3048US10643854B2Silicon dioxide-polysilicon multi-layered stack etching with plasma etch chamber employing non-corrosive etchantsAPPLIED MATERIALS INC·Filed 2015·Granted May 5, 2020·0 cites·6 claims
- 3146US2010101729A1Process kit having reduced erosion sensitivityAPPLIED MATERIALS INC·Filed 2008·Application pending·0 cites
- 3242US2015001180A1Process kit for edge critical dimension uniformity controlAPPLIED MATERIALS INC·Filed 2013·Application pending·0 cites
- 3342US2007249173A1Plasma etch process using etch uniformity control by using compositionally independent gas feedAPPLIED MATERIALS INC·Filed 2006·Application pending·0 cites
- 3442US2014342570A1Etch process having adaptive control with etch depth of pressure and powerAPPLIED MATERIALS INC·Filed 2013·Application pending·0 cites
- 3541US2013122707A1Methods of polymers deposition for forming reduced critical dimensionsSHIMIZU DAISUKE·Filed 2012·Application pending·0 cites
- 3641US2014056747A1Rotational clap suction/pressure deviceKIM JONG-MUN·Filed 2012·Application pending·0 cites
- 3741US2021234091A1Magnetic memory and method of fabricationAPPLIED MATERIALS INC·Filed 2020·Application pending·0 cites
- 3838US2013122712A1Method of etching high aspect ratio features in a dielectric layerKIM JONG MUN·Filed 2012·Application pending·0 cites
- 3936US2013224960A1Methods for etching oxide layers using process gas pulsingPAYYAPILLY JAIRAJ·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →