Inventor · disambiguated record
Joon-Mo Kwon
Also filed as: KWON JOON-MO
6 granted patents·3 pending applications·22 citations·filing 1999–2021
78Inventor score
Top patents by PatentIndex Score
9 records- 0167US7192822B2Method of fabricating CMOS type semiconductor device having dual gatesSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Mar 20, 2007·3 cites·20 claims
- 0263US7084478B2Load resistor with dummy contact substantially free of charge build up during etching processSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Aug 1, 2006·9 cites·17 claims
- 0359US7148116B2Semiconductor device with load resistor and fabrication methodSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Dec 12, 2006·1 cites·14 claims
- 0452US7825496B2Semiconductor device having a filling pattern around a storage structure and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Nov 2, 2010·1 cites·17 claims
- 0546US2021358917A1Semiconductor memory device and method of producing sameCHANGXIN MEMORY TECH INC·Filed 2021·Application pending·0 cites
- 0641US7101769B2Method of forming a reliable high performance capacitor using an isotropic etching processSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Sep 5, 2006·2 cites·15 claims
- 0741US2006255391A1Method of forming a reliable high performance capacitor using an isotropic etching processSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 0836US2005218448A1Transistor structure having an oxidation inhibition layer and method of forming the sameKIM DAE-IK·Filed 2005·Application pending·0 cites
- 0935US6271105B1Method of forming multiple wells in a semiconductor integrated circuit using fewer photolithography stepsSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Aug 7, 2001·6 cites·32 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →