Inventor · disambiguated record
Joonmyoung Lee
Also filed as: LEE JOONMYOUNG
26 granted patents·5 pending applications·75 citations·filing 2014–2024
94Inventor score
Top patents by PatentIndex Score
31 records- 0195US9184376B2Memory devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Nov 10, 2015·20 cites·33 claims
- 0293US9543505B2Magnetic memory device and method for manufacturing the samePARK SANG HWAN·Filed 2015·Granted Jan 10, 2017·12 cites·15 claims
- 0390US12477956B2Magnetic memory device including capping pattern on non-magnetic patternSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Nov 18, 2025·1 cites·19 claims
- 0489US10147873B2Free layer, magnetoresistive cell, and magnetoresistive random access memory device having low boron concentration region and high boron concentration region, and methods of fabricating the sameLEE JOONMYOUNG·Filed 2018·Granted Dec 4, 2018·6 cites·20 claims
- 0589US9859488B2Magnetic memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jan 2, 2018·5 cites·20 claims
- 0688US9842637B2Magnetic memory device and method of fabricating the sameKIM KI WOONG·Filed 2016·Granted Dec 12, 2017·6 cites·20 claims
- 0787US10910552B2Magnetic memory device, method for manufacturing the same, and substrate treating apparatusSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Feb 2, 2021·4 cites·12 claims
- 0884US9640755B2Magnetic memory device and method of manufacturing the sameLEE JOONMYOUNG·Filed 2015·Granted May 2, 2017·4 cites·20 claims
- 0983US9985200B2Magnetic memory devices including oxidized non-magnetic patterns with non-metallic elements and methods of fabricating the sameLEE JOONMYOUNG·Filed 2017·Granted May 29, 2018·4 cites·29 claims
- 1083US9905753B2Free layer, magnetoresistive cell, and magnetoresistive random access memory device having low boron concentration region and high boron concentration region, and methods of fabricating the sameLEE JOONMYOUNG·Filed 2016·Granted Feb 27, 2018·6 cites·20 claims
- 1179US9934950B2Sputtering apparatuses and methods of manufacturing a magnetic memory device using the sameLEE JOONMYOUNG·Filed 2016·Granted Apr 3, 2018·1 cites·15 claims
- 1274US9660187B1Methods of forming a layer and methods of manufacturing magnetic memory devices using the samePARK YONG SUNG·Filed 2016·Granted May 23, 2017·2 cites·20 claims
- 1374US2024249760A1Magnetic memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1471US11535930B2Sputtering apparatus and method of fabricating magnetic memory device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Dec 27, 2022·0 cites·15 claims
- 1571US9203014B2Magnetic memory devices having junction magnetic layers and buffer layers and related methodsLEE JOONMYOUNG·Filed 2014·Granted Dec 1, 2015·2 cites·30 claims
- 1670US12446474B2Magnetic memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Oct 14, 2025·0 cites·19 claims
- 1770US11834738B2Sputtering apparatus and method of fabricating magnetic memory device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Dec 5, 2023·0 cites·7 claims
- 1869US9923138B2Magnetic memory device and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Mar 20, 2018·1 cites·6 claims
- 1967US11942128B2Magnetic memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Mar 26, 2024·0 cites·18 claims
- 2064US10553790B1Method of manufacuring a magnetic memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Feb 4, 2020·1 cites·20 claims
- 2151US2023117646A1Magnetic memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 2248US12286707B2Apparatus for manufacturing semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Apr 29, 2025·0 cites·11 claims
- 2348US10862025B2Magnetic memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Dec 8, 2020·0 cites·20 claims
- 2444US11730064B2Magnetic memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Aug 15, 2023·0 cites·15 claims
- 2543US2016133831A1Method of forming metal oxide layer and magnetic memory device including the sameKIM KI WOONG·Filed 2015·Application pending·0 cites
- 2642US9831422B2Magnetic memory devices having perpendicular magnetic tunnel junctionSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Nov 28, 2017·0 cites·18 claims
- 2742US2022320418A1Magnetic memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Application pending·0 cites
- 2841US11127786B2Magnetic memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Sep 21, 2021·0 cites·17 claims
- 2941US10629807B2Process control method and process control system for manufacturing semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Apr 21, 2020·0 cites·14 claims
- 3041US9842987B2Magnetic tunnel junction memory devices including crystallized boron-including first magnetic layer on a tunnel barrier layer and lower boron-content second magnetic layer on the first magnetic layerOH SECHUNG·Filed 2014·Granted Dec 12, 2017·0 cites·19 claims
- 3132US2017092848A1Magnetic memory device and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →