Inventor · disambiguated record
Jorn Lutzen
Also filed as: LUETZEN JOERN · LUTZEN JORN
13 granted patents·2 pending applications·399 citations·filing 2001–2004
93Inventor score
Top patents by PatentIndex Score
15 records- 0197US7041568B2Method for the production of a self-adjusted structure on a semiconductor waferINFINEON TECHNOLOGIES AG·Filed 2002·Granted May 9, 2006·212 cites·8 claims
- 0289US6853023B2Semiconductor memory cell configuration and a method for producing the configurationINFINEON TECHNOLOGIES AG·Filed 2003·Granted Feb 8, 2005·42 cites·8 claims
- 0386US6455369B1Method for fabricating a trench capacitorINFINEON TECHNOLOGIES AG·Filed 2001·Granted Sep 24, 2002·50 cites·15 claims
- 0473US6633061B2SOI substrate, a semiconductor circuit formed in a SOI substrate, and an associated production methodINFINEON TECHNOLOGIES AG·Filed 2001·Granted Oct 14, 2003·21 cites·9 claims
- 0571US7087484B2Method for fabricating trench capacitors for integrated semiconductor memoriesINFINEON TECHNOLOGIES AG·Filed 2003·Granted Aug 8, 2006·13 cites·31 claims
- 0671US6919255B2Semiconductor trench structureINFINEON TECHNOLOGIES AG·Filed 2003·Granted Jul 19, 2005·16 cites·18 claims
- 0766US6916721B2Method for fabricating a trench capacitor with an insulation collarINFINEON TECHNOLOGIES AG·Filed 2003·Granted Jul 12, 2005·11 cites·16 claims
- 0864US6674113B2Trench capacitor and method for manufacturing the sameINFINEON TECHNOLOGIES AG·Filed 2002·Granted Jan 6, 2004·9 cites·16 claims
- 0960US6863769B2Configuration and method for making contact with the back surface of a semiconductor substrateINFINEON TECHNOLOGIES AG·Filed 2003·Granted Mar 8, 2005·7 cites·9 claims
- 1057US6939805B2Method of etching a layer in a trench and method of fabricating a trench capacitorINFINEON TECHNOLOGIES AG·Filed 2002·Granted Sep 6, 2005·7 cites·20 claims
- 1157US6756626B2Trench capacitor having an insulation collarINFINEON TECHNOLOGIES AG·Filed 2001·Granted Jun 29, 2004·7 cites·7 claims
- 1248US6746880B2Method for making electrical contact with a rear side of a semiconductor substrate during its processingINFINEON TECHNOLOGIES AG·Filed 2001·Granted Jun 8, 2004·2 cites·18 claims
- 1343US6977405B2Semiconductor memory with memory cells comprising a vertical selection transistor and method for fabricating itINFINEON TECHNOLOGIES AG·Filed 2004·Granted Dec 20, 2005·2 cites·10 claims
- 1439US2006127576A1Method and process reactor for sequential gas phase deposition by means of a process and an auxiliatry chamberHECHT THOMAS·Filed 2003·Application pending·0 cites
- 1537US2005127421A1Semiconductor module having an insulation layer and method for fabricating a semiconductor module having an insulation layerINFINEON TECHNOLOGIES AG·Filed 2003·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →