Inventor · disambiguated record
Jörg Siegert
Also filed as: SIEGERT JÖRG
9 granted patents·3 pending applications·4 citations·filing 2011–2022
76Inventor score
Top patents by PatentIndex Score
12 records- 0179US11248976B2Capacitive pressure sensors and other devices having a suspended membrane and having rounded corners at an anchor edgeSCIOSENSE BV·Filed 2018·Granted Feb 15, 2022·2 cites·24 claims
- 0276US11585711B2Capacitive pressure with Ti electrodeSCIOSENSE BV·Filed 2019·Granted Feb 21, 2023·2 cites·20 claims
- 0373US11878906B2Method for manufacturing an integrated MEMS transducer device and integrated MEMS transducer deviceSCIOSENSE BV·Filed 2022·Granted Jan 23, 2024·0 cites·16 claims
- 0468US2022221363A1Pressure Sensor Device and Method for Forming a Pressure Sensor DeviceSCIOSENSE BV·Filed 2022·Application pending·0 cites
- 0561US11492251B2Method for manufacturing an integrated MEMS transducer device and integrated MEMS transducer deviceSCIOSENSE BV·Filed 2019·Granted Nov 8, 2022·0 cites·9 claims
- 0652US2024321932A1Thin photodetector device and fabrication thereofAMS OSRAM AG·Filed 2022·Application pending·0 cites
- 0751US11946822B2Semiconductor transducer device with multilayer diaphragm and method of manufacturing a semiconductor transducer device with multilayer diaphragmSCIOSENSE BV·Filed 2019·Granted Apr 2, 2024·0 cites·20 claims
- 0848US12191402B2Method of manufacturing a semiconductor transducer device with multilayer diaphragm and semiconductor transducer device with multilayer diaphragmSCIOSENSE BV·Filed 2019·Granted Jan 7, 2025·0 cites·10 claims
- 0947US2024170371A1Semiconductor substrate comprising a through-substrate-via and method for producing thereofAMS OSRAM AG·Filed 2022·Application pending·0 cites
- 1044US11764109B2Method of forming a through-substrate via and a semiconductor device comprising a through-substrate viaAMS AG·Filed 2019·Granted Sep 19, 2023·0 cites·11 claims
- 1139US9105645B2Method for producing thin semiconductor componentsAMS AG·Filed 2012·Granted Aug 11, 2015·0 cites·7 claims
- 1235US8884442B2Method for producing a semiconductor component with a through-contact and semiconductor component with through-contactKRAFT JOCHEN·Filed 2011·Granted Nov 11, 2014·0 cites·4 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →