Pressure Sensor Device and Method for Forming a Pressure Sensor Device

Abstract

In an embodiment a method for forming a pressure sensor device includes providing a pressure sensor on a substrate body, the pressure sensor comprising a membrane, depositing a top layer on top of the substrate body and the pressure sensor, connecting a cap body with the top layer, a mass of the cap body being approximately equal to a mass of the substrate body and introducing at least one opening in the cap body.

What is claimed is: 
     
         1 . A method for forming a pressure sensor device, the method comprising:
 providing a pressure sensor on a substrate body, the pressure sensor comprising a membrane;   depositing a top layer on top of the substrate body and the pressure sensor;   connecting a cap body with the top layer, a mass of the cap body being approximately equal to a mass of the substrate body; and   introducing at least one opening in the cap body.   
     
     
         2 . The method for forming the pressure sensor device according to  claim 1 , wherein the mass of the substrate body amounts to at least 80% of the mass of the cap body and at most 120% of the mass of the cap body. 
     
     
         3 . The method for forming the pressure sensor device according to  claim 1 , wherein the mass of the substrate body amounts to at least 95% of the mass of the cap body and at most 105% of the mass of the cap body. 
     
     
         4 . The method for forming the pressure sensor device according to  claim 1 ,
 wherein a handling wafer is connected to the substrate body at a side of the substrate body facing away from the cap body by an adhesive material, and   wherein the handling wafer and the adhesive material are removed.   
     
     
         5 . The method for forming the pressure sensor device according to  claim 1 ,
 wherein a handling wafer is connected to the substrate body at a side of the substrate body facing away from the cap body by an adhesive material which is patternable,   wherein the handling wafer is removed, and   wherein the adhesive material is not removed.   
     
     
         6 . The method for forming the pressure sensor device according to  claim 1 , further comprising etching a vertical, electrically conductive via in the substrate body before the membrane is released. 
     
     
         7 . The method for forming the pressure sensor device according to  claim 1 , further comprising etching a vertical, electrically conductive via in the substrate body after the membrane is released. 
     
     
         8 . The method for forming the pressure sensor device according to  claim 1 , further comprising forming a cavity below the membrane. 
     
     
         9 . The method for forming the pressure sensor device according to  claim 1 , wherein the substrate body comprises at least one vertical, electrically conductive via. 
     
     
         10 . The method for forming the pressure sensor device according to  claim 1 , wherein the pressure sensor device is surface mountable. 
     
     
         11 . The method for forming the pressure sensor device according to  claim 1 , wherein the top layer and the cap body are connected via direct bonding. 
     
     
         12 . The method for forming the pressure sensor device according to  claim 1 , wherein the opening in the cap body is positioned above the pressure sensor in a vertical direction and extends over a total lateral extension of the pressure sensor. 
     
     
         13 . The method for forming the pressure sensor device according to  claim 1 , wherein the opening in the cap body is positioned above the pressure sensor in a vertical direction and a lateral extension of the opening is smaller than a lateral extension of the pressure sensor. 
     
     
         14 . The method for forming the pressure sensor device according to  claim 1 , further comprising thinning the cap body before introducing the at least one opening. 
     
     
         15 . The method for forming the pressure sensor device according to  claim 1 , further comprising thinning the substrate body after the cap body is connected to the substrate body. 
     
     
         16 . The method for forming the pressure sensor device according to  claim 1 , wherein the at least one opening is introduced by deep reactive ion etching of the cap body.