Inventor · disambiguated record
John Twynam
Also filed as: TWYNAM JOHN · TWYNAM JOHN K · TWYNAM JOHN KEVIN
35 granted patents·9 pending applications·289 citations·filing 1991–2025
97Inventor score
Top patents by PatentIndex Score
44 records- 0194US7538364B2Compound semiconductor FETSHARP KK·Filed 2004·Granted May 26, 2009·98 cites·6 claims
- 0288US8288796B2Semiconductor deviceITO NOBUYUKI·Filed 2010·Granted Oct 16, 2012·9 cites·19 claims
- 0379US7629632B2Insulated-gate field effect transistorSHARP KK·Filed 2007·Granted Dec 8, 2009·8 cites·5 claims
- 0478US2025240993A1Semiconductor device with a semiconductor body having a type iii-nitride semiconductor portion disposed on a base carrier portionINFINEON TECHNOLOGIES AG·Filed 2025·Application pending·0 cites
- 0577US12278275B2Selective laser annealing methodINFINEON TECHNOLOGIES AG·Filed 2023·Granted Apr 15, 2025·0 cites·13 claims
- 0677US6611008B2Heterojunction bipolar transistor capable of restraining the conductivity modulation of the ballast layerSHARP KK·Filed 2000·Granted Aug 26, 2003·24 cites·8 claims
- 0776US8766275B2Composite semiconductor deviceIKETANI NAOYASU·Filed 2010·Granted Jul 1, 2014·7 cites·12 claims
- 0875US7759760B2Semiconductor switching element and semiconductor circuit apparatusSHARP KK·Filed 2007·Granted Jul 20, 2010·7 cites·13 claims
- 0974US12446285B2Group III nitride-based transistor deviceINFINEON TECHNOLOGIES AG·Filed 2021·Granted Oct 14, 2025·0 cites·22 claims
- 1074US5508536AHeterojunction bipolar transistor having low electron and hole concentrations in the emitter-base junction regionSHARP KK·Filed 1994·Granted Apr 16, 1996·37 cites·6 claims
- 1173US12087830B2Group III nitride device and method of fabricating a Group III nitride-based deviceINFINEON TECHNOLOGIES AG·Filed 2021·Granted Sep 10, 2024·0 cites·8 claims
- 1273US11929405B2Group III nitride-based transistor device having a field plateINFINEON TECHNOLOGIES AG·Filed 2021·Granted Mar 12, 2024·0 cites·16 claims
- 1372US8258544B2Field-effect transistorNAGAHISA TETSUZO·Filed 2010·Granted Sep 4, 2012·6 cites·9 claims
- 1472US6399969B1Heterojunction bipolar transistor including collector/base heterojunction achieving high operation efficiencySHARP KK·Filed 2000·Granted Jun 4, 2002·17 cites·6 claims
- 1571US11869963B2Semiconductor device and method of fabricating a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2022·Granted Jan 9, 2024·0 cites·13 claims
- 1670US9825026B2Semiconductor device and semiconductor circuit including the semiconductor device with enhanced current-voltage characteristicsLG INNOTEK CO LTD·Filed 2014·Granted Nov 21, 2017·2 cites·21 claims
- 1770US7893461B2Electronic device and heterojunction FETSHARP KK·Filed 2009·Granted Feb 22, 2011·3 cites·11 claims
- 1869US8017977B2Field effect transistor having recessed gate in compositional graded layerSHARP KK·Filed 2007·Granted Sep 13, 2011·4 cites·8 claims
- 1967US11581418B2Selective thermal annealing methodINFINEON TECHNOLOGIES AG·Filed 2020·Granted Feb 14, 2023·0 cites·13 claims
- 2067US9269801B2Normally-off-type heterojunction field-effect transistorSHARP KK·Filed 2012·Granted Feb 23, 2016·2 cites·7 claims
- 2167US8004022B2Field effect transistorSHARP KK·Filed 2009·Granted Aug 23, 2011·4 cites·10 claims
- 2266US2025159917A1Semiconductor Device and Method for Fabricating a Semiconductor WaferINFINEON TECHNOLOGIES AG·Filed 2025·Application pending·0 cites
- 2363US12230689B2Semiconductor device and method for fabricating a semiconductor waferINFINEON TECHNOLOGIES AG·Filed 2021·Granted Feb 18, 2025·0 cites·10 claims
- 2463US11342451B2Semiconductor device and method of fabricating a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2019·Granted May 24, 2022·0 cites·9 claims
- 2562US10403723B2Semiconductor device and semiconductor circuit including the deviceLG INNOTEK CO LTD·Filed 2014·Granted Sep 3, 2019·1 cites·13 claims
- 2660US7733105B2Voltage clamp circuit and semiconductor device, overcurrent protection circuit, voltage measurement probe, voltage measurement device and semiconductor evaluation device respectively using the sameSHARP KK·Filed 2008·Granted Jun 8, 2010·3 cites·10 claims
- 2759US7566917B2Electronic device and heterojunction FETSHARP KK·Filed 2005·Granted Jul 28, 2009·1 cites·7 claims
- 2853US6111265AGunn diode having a graded aluminum gallium arsenide active layer and Gunn diode oscillatorSHARP KK·Filed 1999·Granted Aug 29, 2000·9 cites·6 claims
- 2950US8723224B2Semiconductor deviceITO NOBUYUKI·Filed 2012·Granted May 13, 2014·0 cites·4 claims
- 3046US6133592ACompound semiconductor device and method for producing the sameSHARP KK·Filed 1997·Granted Oct 17, 2000·9 cites·10 claims
- 3146US5721437AHeterojunction-type bipolar transistor with ballast resistance layerSHARP KK·Filed 1995·Granted Feb 24, 1998·11 cites·11 claims
- 3246US5719415AHetero-junction bipolar transistorSHARP KK·Filed 1996·Granted Feb 17, 1998·12 cites·10 claims
- 3346US2020395447A1Semiconductor Device and Method for Fabricating a WaferINFINEON TECHNOLOGIES AG·Filed 2020·Application pending·0 cites
- 3443US7126171B2Bipolar transistorSHARP KK·Filed 2004·Granted Oct 24, 2006·1 cites·13 claims
- 3542US2005227638A1Microwave band radio transmission device, microwave band radio reception device, and microwave band radio communication systemSHARP KK·Filed 2003·Application pending·0 cites
- 3641US7928480B2Semiconductor deviceSHARP KK·Filed 2006·Granted Apr 19, 2011·0 cites·11 claims
- 3741US2008105902A1RectifierSHARP KK·Filed 2007·Application pending·0 cites
- 3841US2007102727A1Field-effect transistorSHARP KK·Filed 2006·Application pending·0 cites
- 3939US6566694B2Heterojunction bipolar transferred electron tetrodeSHARP KK·Filed 2001·Granted May 20, 2003·3 cites·13 claims
- 4038US2013306984A1Normally-off-type heterojunction field-effect transistorTWYNAM JOHN KEVIN·Filed 2012·Application pending·0 cites
- 4135US5216538AElectric-signal amplifying device using light transmissionSHARP KK·Filed 1991·Granted Jun 1, 1993·5 cites·6 claims
- 4232US6037663AOhmic electrode structure for Inx Ga1-x As layerSHARP KK·Filed 1993·Granted Mar 14, 2000·6 cites·5 claims
- 4332US2002011604A1Semiconductor device for milliwave band oscillation, fabricating method therefor and oscillator therewithFiled 2001·Application pending·0 cites
- 4432US2011133205A1Field-effect transistorSHARP KK·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →