Inventor · disambiguated record
Johan W. Weijtmans
Also filed as: WEIJTMANS JOHAN · WEIJTMANS JOHAN W
6 granted patents·3 pending applications·102 citations·filing 2007–2012
84Inventor score
Top patents by PatentIndex Score
9 records- 0195US7989298B1Transistor having V-shaped embedded stressorIBM·Filed 2010·Granted Aug 2, 2011·27 cites·20 claims
- 0295US7553717B2Recess etch for epitaxial SiGeTEXAS INSTRUMENTS INC·Filed 2007·Granted Jun 30, 2009·44 cites·11 claims
- 0386US8120120B2Embedded silicon germanium source drain structure with reduced silicide encroachment and contact resistance and enhanced channel mobilityYANG FRANK BIN·Filed 2009·Granted Feb 21, 2012·16 cites·18 claims
- 0482US8222673B2Self-aligned embedded SiGe structure and method of manufacturing the sameGREENE BRIAN J·Filed 2010·Granted Jul 17, 2012·5 cites·11 claims
- 0580US8598009B2Self-aligned embedded SiGe structure and method of manufacturing the sameGREENE BRIAN J·Filed 2012·Granted Dec 3, 2013·4 cites·20 claims
- 0670US8835263B2Formation of a selective carbon-doped epitaxial cap layer on selective epitaxial SiGeWEIJTMANS JOHAN·Filed 2007·Granted Sep 16, 2014·6 cites·17 claims
- 0754US2010038727A1Carbon-Doped Epitaxial SiGeTEXAS INSTRUMENTS INC·Filed 2009·Application pending·0 cites
- 0853US2009179236A1Recess Etch for Epitaxial SiGeTEXAS INSTRUMENTS INC·Filed 2009·Application pending·0 cites
- 0950US2008242032A1Carbon-Doped Epitaxial SiGeTEXAS INSTRUMENTS INC·Filed 2007·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →