Inventor · disambiguated record
Jong-Ryeol Yoo
Also filed as: YOO JONG-RYEOL
27 granted patents·20 pending applications·197 citations·filing 2003–2023
96Inventor score
Top patents by PatentIndex Score
47 records- 0196US7595213B2Semiconductor devices, CMOS image sensors, and methods of manufacturing sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Sep 29, 2009·36 cites·7 claims
- 0292US7842566B2FinFET and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Nov 30, 2010·20 cites·13 claims
- 0391US10164057B1Vertical tunneling field effect transistor and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Dec 25, 2018·7 cites·20 claims
- 0486US10644158B2Semiconductor device including fin field effect transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted May 5, 2020·5 cites·19 claims
- 0585US7696552B2Semiconductor devices including high-k dielectric materialsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 13, 2010·12 cites·7 claims
- 0684US7534709B2Semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 19, 2009·12 cites·10 claims
- 0782US7521316B2Methods of forming gate structures for semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 21, 2009·8 cites·46 claims
- 0880US7683421B2NAND-type flash memory devices including selection transistors with an anti-punchthrough impurity region and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 23, 2010·9 cites·20 claims
- 0980US6890823B2Methods of forming integrated circuits with thermal oxide layers on side walls of gate electrodes wherein the source and drain are higher than the gate electrodeSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted May 10, 2005·28 cites·30 claims
- 1078US10103266B2Semiconductor devices having lower and upper fins and method for fabricating the sameKIM SUNG MIN·Filed 2015·Granted Oct 16, 2018·2 cites·20 claims
- 1178US7371669B2Method of forming a gate of a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 13, 2008·7 cites·22 claims
- 1277US8168521B2Methods of manufacturing semiconductor devices having low resistance buried gate structuresJEON IN-SANG·Filed 2010·Granted May 1, 2012·7 cites·12 claims
- 1372US8691649B2Methods of forming recessed channel array transistors and methods of manufacturing semiconductor devicesPARK TAI-SU·Filed 2011·Granted Apr 8, 2014·4 cites·20 claims
- 1471US7579249B2Methods for fabricating DRAM semiconductor devices including silicon epitaxial and metal silicide layersSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Aug 25, 2009·3 cites·7 claims
- 1571US6900102B2Methods of forming double gate electrodes using tunnel and trenchSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 31, 2005·13 cites·28 claims
- 1669US8034701B2Methods of forming recessed gate electrodes having covered layer interfacesSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Oct 11, 2011·3 cites·13 claims
- 1769US7772637B2Semiconductor devices including gate structures and leakage barrier oxidesSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Aug 10, 2010·3 cites·15 claims
- 1868US7582931B2Recessed gate electrodes having covered layer interfaces and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 1, 2009·3 cites·5 claims
- 1964US7511340B2Semiconductor devices having gate structures and contact pads that are lower than the gate structuresSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 31, 2009·2 cites·15 claims
- 2061US10319858B2Semiconductor devices having lower and upper fins and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jun 11, 2019·0 cites·20 claims
- 2159US2024339378A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 2258US2019252540A1Semiconductor devices having lower and upper fins and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Application pending·0 cites
- 2358US2009315137A1Semiconductor devices, cmos image sensors, and methods of manufacturing sameKWON DOO-WON·Filed 2009·Application pending·0 cites
- 2458US2024339498A1Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 2555US8252681B2Methods of forming integrated circuit devices having electrically conductive layers therein with partially nitridated sidewallsRYU JEONG-DO·Filed 2009·Granted Aug 28, 2012·0 cites·10 claims
- 2655US7338867B2Semiconductor device having contact pads and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Mar 4, 2008·5 cites·32 claims
- 2755US6963094B2Metal oxide semiconductor transistors having a drain punch through blocking region and methods for fabricating metal oxide semiconductor transistors having a drain punch through blocking regionSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Nov 8, 2005·4 cites·41 claims
- 2854US10892347B2Vertical tunneling field effect transistor and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jan 12, 2021·0 cites·19 claims
- 2954US9190495B2Recessed channel array transistors, and semiconductor devices including a recessed channel array transistorRYU JEONG-DO·Filed 2009·Granted Nov 17, 2015·1 cites·11 claims
- 3050US8501611B2Methods of forming integrated circuit devices having electrically conductive layers therein with partially nitridated sidewallsRYU JEONG-DO·Filed 2012·Granted Aug 6, 2013·0 cites·12 claims
- 3150US7081391B2Integrated circuit devices having buried insulation layers and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jul 25, 2006·3 cites·13 claims
- 3249US2010025749A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2009·Application pending·0 cites
- 3348US2010055856A1Method of forming oxide layer, and method of manufacturing semiconductor deviceHONG SOO-JIN·Filed 2009·Application pending·0 cites
- 3447US2009325356A1Methods of forming a low temperature deposition layer and methods of manufacturing semiconductor device using the sameSHIN DONG-WOON·Filed 2009·Application pending·0 cites
- 3546US2006226455A1Integrated circuit devices having buried insulation layers and methods of forming the sameLEE BYEONG-CHAN·Filed 2006·Application pending·0 cites
- 3642US2008048262A1Fin field effect transistor and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 3742US2014367774A1Semiconductor Devices Having Partially Oxidized Gate ElectrodesSAMSUNG ELECTRONICS CO LTD·Filed 2014·Application pending·0 cites
- 3842US2006115967A1Methods of manufacturing a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 3939US2006068535A1Methods of fabricating semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 4039US2006051921A1Methods of manufacturing semiconductor device gate structures by performing a surface treatment on a gate oxide layerSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 4138US2005282338A1Methods of forming gate patterns using isotropic etching of gate insulating layersYOO JONG-RYEOL·Filed 2005·Application pending·0 cites
- 4237US2004021164A1DRAM semiconductor device and method for fabricating the sameFiled 2003·Application pending·0 cites
- 4337US2005266665A1Methods of manufacturing semiconductor devices with gate structures having an oxide layer on the sidewalls thereof and related processing apparatusYOUN SUN-PIL·Filed 2005·Application pending·0 cites
- 4435US2008073730A1Semiconductor device and method for formimg the sameLEE DEOK-HYUNG·Filed 2007·Application pending·0 cites
- 4535US2010213541A1Semiconductor device having recess channel structureSAMSUNG ELECTRONICS CO LTD·Filed 2010·Application pending·0 cites
- 4635US2006079075A1Gate structures with silicide sidewall barriers and methods of manufacturing the sameLEE CHANG-WON·Filed 2005·Application pending·0 cites
- 4734US2007054453A1Methods of forming integrated circuit memory devices having a charge storing layer formed by plasma dopingBUH GYOUNG-HO·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →