Semiconductor devices, cmos image sensors, and methods of manufacturing same

Abstract

A semiconductor device includes: a trench device isolating region formed in a substrate to define a photodiode active region; a channel stop impurity region formed in the substrate contacting the device isolating region, wherein the channel stop impurity region surrounds a bottom and a sidewall of the device isolating region; and a photodiode formed within the photodiode active region.

1 . A semiconductor device comprising:
 a trench device isolating region formed in a substrate to define a photodiode active region;   a channel stop impurity region formed in the substrate contacting the device isolating region, wherein the channel stop impurity region surrounds a bottom and a sidewall of the device isolating region; and   a photodiode formed within the photodiode active region.   
   
   
       2 . The semiconductor device of  claim 1 , wherein an impurity density within the channel stop impurity region is continuously decreased away from the device isolating region. 
   
   
       3 . The semiconductor device of  claim 1 , wherein a thickness of the channel stop impurity region on the side of the device isolating region has a ratio of 0.5 to 1 with respect to a thickness of the channel stop impurity region under the device isolating region. 
   
   
       4 . The semiconductor device of  claim 1 , wherein the trench is comprised of a deep trench configuration. 
   
   
       5 . The semiconductor device of  claim 4 , wherein the depth of the trench is about 1 μm to about 4 μm. 
   
   
       6 . The semiconductor device of  claim 1 , wherein the substrate comprises a base substrate and an epitaxial layer formed on the base substrate, and wherein the trench penetrates through the epitaxial layer. 
   
   
       7 . The semiconductor device of  claim 1 , wherein the semiconductor device comprises an image sensor. 
   
   
       8 . An image sensor comprising:
 a substrate having a pixel region and a peripheral circuit region;   a circuit trench device isolating region formed in the peripheral circuit region to define a circuit active region;   a pixel trench device isolating region formed in the pixel region to define a photodiode active region;   a channel stop impurity region formed in the substrate contacting the pixel trench device isolating region, wherein the channel stop impurity region surrounds a bottom and a sidewall of the pixel trench device isolating region; and   a photodiode formed in the photodiode active region.   
   
   
       9 . The image sensor of  claim 8 , wherein the depth of the pixel trench device isolating region is greater than the depth of the circuit trench device isolating region. 
   
   
       10 . The image sensor of  claim 9 , wherein the depth of the pixel trench device isolating region is about 1 μm to about 4 μm. 
   
   
       11 . The image sensor of  claim 8 , wherein an impurity density within the channel stop impurity region is continuously decreased away from the pixel trench device isolating region. 
   
   
       12 . The image sensor of  claim 8 , wherein a thickness of the channel stop impurity region on the side of the pixel trench device isolating region has a ratio of 0.5 to 1 with respect to a thickness of the channel stop impurity region under the device isolating region. 
   
   
       13 . The image sensor of  claim 8 , wherein the substrate comprises a base substrate and an epitaxial layer stacked on the base substrate, wherein the pixel trench device isolating region is formed within the epitaxial layer, and wherein the pixel trench device isolating region penetrates through the epitaxial layer.