Inventor · disambiguated record
Jong-Ho Yun
Also filed as: YUN JONG-HO
30 granted patents·8 pending applications·598 citations·filing 1998–2021
96Inventor score
Files withSAMSUNG ELECTRONICS CO LTD30JUNG SUG-WOO2YUN JONG-HO2HWANG SON-KWAN1HYNIX SEMICONDUCTOR INC1
Top patents by PatentIndex Score
38 records- 0198US7432185B2Method of forming semiconductor device having stacked transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 7, 2008·183 cites·4 claims
- 0298US7381989B2Semiconductor device including upper and lower transistors and interconnection between upper and lower transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 3, 2008·182 cites·23 claims
- 0396US7687331B2Stacked semiconductor device and method of fabricationSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Mar 30, 2010·54 cites·9 claims
- 0492US11710715B2Semiconductor packageSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jul 25, 2023·2 cites·20 claims
- 0590US7842600B2Methods of forming interlayer dielectrics having air gapsSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Nov 30, 2010·19 cites·16 claims
- 0686US7846796B2Semiconductor devices including buried bit linesSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Dec 7, 2010·6 cites·5 claims
- 0786US7749840B2Methods of forming a semiconductor device including buried bit lineSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 6, 2010·9 cites·39 claims
- 0881US7435634B2Methods of forming semiconductor devices having stacked transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 14, 2008·8 cites·28 claims
- 0981US7214620B2Methods of forming silicide films with metal films in semiconductor devices and contacts including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 8, 2007·26 cites·20 claims
- 1079US7172967B2Methods for forming cobalt layers including introducing vaporized cobalt precursors and methods for manufacturing semiconductor devices using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Feb 6, 2007·19 cites·22 claims
- 1178US7638433B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Dec 29, 2009·7 cites·20 claims
- 1276US7833847B2Method of forming semiconductor device having stacked transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Nov 16, 2010·5 cites·7 claims
- 1373US6780777B2Method for forming metal layer of semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Aug 24, 2004·22 cites·22 claims
- 1470US10466859B2Method and system for creating a site on a user terminalNAVER CORP·Filed 2015·Granted Nov 5, 2019·3 cites·22 claims
- 1569US7936024B2Semiconductor devices having stacked structuresSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted May 3, 2011·3 cites·18 claims
- 1668US8183673B2Through-silicon via structures providing reduced solder spreading and methods of fabricating the sameHWANG SON-KWAN·Filed 2009·Granted May 22, 2012·5 cites·30 claims
- 1767US6133147AProcess for selective metal deposition in holes of semiconductor devicePOSTECH FOUNDATION·Filed 1998·Granted Oct 17, 2000·36 cites·8 claims
- 1863US7238612B2Methods of forming a double metal salicide layer and methods of fabricating semiconductor devices incorporating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 3, 2007·2 cites·21 claims
- 1962US8021980B2Methods of manufacturing semiconductor devices including a copper-based conductive layerSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Sep 20, 2011·1 cites·15 claims
- 2061US7416968B2Methods of forming field effect transistors having metal silicide gate electrodesSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Aug 26, 2008·2 cites·31 claims
- 2159US8044490B2Semiconductor device including fuseSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Oct 25, 2011·1 cites·17 claims
- 2259US7560331B2Method for forming a silicided gateSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 14, 2009·2 cites·23 claims
- 2357US8497207B2Methods of forming semiconductor devices including landing pads formed by electroless platingYUN JONG-HO·Filed 2010·Granted Jul 30, 2013·1 cites·11 claims
- 2454US7579225B2Method of forming semiconductor device having stacked transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 25, 2009·0 cites·9 claims
- 2551US2007099421A1Methods For Forming Cobalt Layers Including Introducing Vaporized Cobalt Precursors And Methods For Manufacturing Semiconductor Devices Using The SameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 2650US7531459B2Methods of forming self-aligned silicide layers using multiple thermal processesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 12, 2009·0 cites·22 claims
- 2749US7666786B2Methods of fabricating semiconductor devices having a double metal salicide layerSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Feb 23, 2010·0 cites·12 claims
- 2846US2008318421A1Methods of forming films of a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 2945US7867898B2Method forming ohmic contact layer and metal wiring in semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jan 11, 2011·0 cites·20 claims
- 3044US7662707B2Method of forming relatively continuous silicide layers for semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 16, 2010·0 cites·24 claims
- 3142US2013127056A1Semiconductor devices including dual damascene metallization structuresSAMSUNG ELECTRONICS CO LTD·Filed 2012·Application pending·0 cites
- 3242US2008020567A1Method of Manufacturing a Semiconductor DeviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 3342US2006160361A1Nickel salicide process and method of fabricating a semiconductor device using the sameJUNG SUG-WOO·Filed 2005·Application pending·0 cites
- 3441US7312150B2Method of forming cobalt disilicide layer and method of manufacturing semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Dec 25, 2007·0 cites·34 claims
- 3541US2007281424A1Semiconductor device and method of its formationSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 3639US2006199343A1Method of forming MOS transistor having fully silicided metal gate electrodeJUNG SUG-WOO·Filed 2006·Application pending·0 cites
- 3738US7569483B2Methods of forming metal silicide layers by annealing metal layers using inert heat transferring gases established in a convection apparatusSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Aug 4, 2009·0 cites·12 claims
- 3836US2007059912A1Method of forming metal silicide layer and related method of fabricating semiconductor devicesYUN JONG-HO·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →