Inventor · disambiguated record
Jr-Jung Lin
Also filed as: LIN JR-JUNG
80 granted patents·3 pending applications·280 citations·filing 2008–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD60TAIWAN SEMICONDUCTOR MFG11LIN JR JUNG4LIN YIH-ANN3Lin yu chao3
Top patents by PatentIndex Score
83 records- 0197US9818649B2Method and structure for FinFET isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 14, 2017·11 cites·20 claims
- 0297US9490176B2Method and structure for FinFET isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Nov 8, 2016·20 cites·20 claims
- 0397US9245883B1Method of making a FinFET deviceTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jan 26, 2016·30 cites·11 claims
- 0495US10867865B2Method and structure for FinFET isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·5 cites·20 claims
- 0595US9041125B2Fin shape for fin field-effect transistors and method of formingTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted May 26, 2015·17 cites·20 claims
- 0694US11605564B2Method and structure for FinFET isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 14, 2023·2 cites·20 claims
- 0794US9627375B2Indented gate end of non-planar transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Apr 18, 2017·16 cites·20 claims
- 0893US9735256B2Method and structure for FinFET comprising patterned oxide and dielectric layer under spacer featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 15, 2017·7 cites·20 claims
- 0993US9460968B2Fin shape for fin field-effect transistors and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 4, 2016·8 cites·20 claims
- 1093US8912610B2Structure and method for MOSFETS with high-K and metal gate structureLIN JR JUNG·Filed 2012·Granted Dec 16, 2014·22 cites·16 claims
- 1193US8383502B2Integrated high-K/metal gate in CMOS process flowTAIWAN SEMICONDUCTOR MFG·Filed 2011·Granted Feb 26, 2013·11 cites·15 claims
- 1292US10522414B2Method and structure for FinFET isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 31, 2019·4 cites·20 claims
- 1392US10312352B2Gate structure of field effect transistor with footingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 4, 2019·4 cites·20 claims
- 1492US10050128B2Gate structure of field effect transistor with footingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 14, 2018·5 cites·18 claims
- 1592US9601388B2Integrated high-K/metal gate in CMOS process flowTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 21, 2017·6 cites·20 claims
- 1691US10163722B2Method and structure for FinFet isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·4 cites·20 claims
- 1791US9991285B2Mechanisms for forming FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jun 5, 2018·8 cites·20 claims
- 1891US9620417B2Apparatus and method of manufacturing fin-FET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Apr 11, 2017·8 cites·19 claims
- 1991US9508719B2Fin field effect transistor (FinFET) device with controlled end-to-end critical dimension and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Nov 29, 2016·9 cites·20 claims
- 2089US9496372B2Method of making a FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 15, 2016·4 cites·20 claims
- 2188US9620621B2Gate structure of field effect transistor with footingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Apr 11, 2017·5 cites·20 claims
- 2287US9837536B2Semiconductor device including fin structures and manufacturing method therofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 5, 2017·4 cites·21 claims
- 2386US8003507B2Method of integrating high-K/metal gate in CMOS process flowTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Aug 23, 2011·8 cites·8 claims
- 2485US11380590B2Mechanisms for forming FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 5, 2022·1 cites·20 claims
- 2585US9773696B2Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Sep 26, 2017·5 cites·5 claims
- 2685US8841731B2Integrated high-k/metal gate in CMOS process flowTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Sep 23, 2014·5 cites·17 claims
- 2784US11605719B2Gate structure with desired profile for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 14, 2023·1 cites·20 claims
- 2883US12125751B2Method and structure for FinFET isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 22, 2024·0 cites·20 claims
- 2983US10367079B2Method and structure for FinFET comprising patterned oxide and dielectric layer under spacer featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 30, 2019·2 cites·20 claims
- 3083US9406680B1Semiconductor device including fin structures and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 2, 2016·3 cites·21 claims
- 3183US8803241B2Dummy gate electrode of semiconductor deviceLIN JR-JUNG·Filed 2012·Granted Aug 12, 2014·5 cites·20 claims
- 3282US10468308B2FinFET structures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 5, 2019·2 cites·20 claims
- 3381US12243924B2Gate structure with non-linear profile for transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 4, 2025·0 cites·20 claims
- 3481US12142609B2Dummy fin between first and second semiconductor finsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 12, 2024·0 cites·20 claims
- 3580US11600717B2Dummy FIN profile control to enlarge gate process windowTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 7, 2023·1 cites·20 claims
- 3680US10535758B2Gate structure of field effect transistor with footingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 14, 2020·1 cites·20 claims
- 3780US9401415B2Fin field effect transistor (FinFET) device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jul 26, 2016·5 cites·13 claims
- 3879US12211750B2Mechanisms for forming FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 28, 2025·0 cites·20 claims
- 3978US7776755B2Solution for polymer and capping layer removing with wet dipping in HK metal gate etching processTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Aug 17, 2010·5 cites·20 claims
- 4077US11121039B2FinFET structures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 14, 2021·1 cites·20 claims
- 4176US10672796B2Mechanisms for forming FINFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 2, 2020·1 cites·20 claims
- 4276US9257426B2Integrated high-k/metal gate in CMOS process flowTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Feb 9, 2016·2 cites·20 claims
- 4376US9153440B2Method of forming a semiconductor deviceLIN CHIH-HAN·Filed 2012·Granted Oct 6, 2015·4 cites·20 claims
- 4476US8148249B2Methods of fabricating high-k metal gate devicesLIN YIH-ANN·Filed 2009·Granted Apr 3, 2012·4 cites·17 claims
- 4576US2025169150A1Gate structure with non-linear profile for transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4674US11764222B2Method of forming a dummy fin between first and second semiconductor finsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 19, 2023·0 cites·20 claims
- 4774US9306037B2Dummy gate electrode of semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Apr 5, 2016·2 cites·20 claims
- 4873US12113122B2Dummy fin profile control to enlarge gate process windowTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 8, 2024·0 cites·20 claims
- 4973US11721746B2Method and structure for FinFET comprising patterned oxide and dielectric layer under spacer featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 8, 2023·0 cites·20 claims
- 5073US11670711B2Metal gate electrode of a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 6, 2023·0 cites·20 claims
Showing the top 50 of 83 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →