Inventor · disambiguated record
Julie Casperson Brewer
Also filed as: BREWER JULIE CASPERSON
15 granted patents·4 pending applications·243 citations·filing 2007–2020
93Inventor score
Top patents by PatentIndex Score
19 records- 0198US8848425B2Conductive metal oxide structures in non volatile re-writable memory devicesUNITY SEMICONDUCTOR CORP·Filed 2013·Granted Sep 30, 2014·59 cites·20 claims
- 0298US8045364B2Non-volatile memory device ion barrierUNITY SEMICONDUCTOR CORP·Filed 2009·Granted Oct 25, 2011·121 cites·32 claims
- 0393US7995371B2Threshold device for a memory arrayUNITY SEMICONDUCTOR CORP·Filed 2007·Granted Aug 9, 2011·30 cites·39 claims
- 0488US8031510B2Ion barrier capUNITY SEMICONDUCTOR CORP·Filed 2010·Granted Oct 4, 2011·9 cites·17 claims
- 0587US8031509B2Conductive metal oxide structures in non-volatile re-writable memory devicesUNITY SEMICONDUCTOR CORP·Filed 2009·Granted Oct 4, 2011·13 cites·50 claims
- 0672US8274817B2Non volatile memory device ion barrierSCHLOSS LAWRENCE·Filed 2011·Granted Sep 25, 2012·3 cites·30 claims
- 0771US8320161B2Conductive metal oxide structures in non volatile re writable memory devicesSCHLOSS LAWRENCE·Filed 2011·Granted Nov 27, 2012·3 cites·22 claims
- 0869US2021098063A1Conductive metal oxide structures in non-volatile re-writable memory devicesUNITY SEMICONDUCTOR CORP·Filed 2020·Application pending·0 cites
- 0967US9767897B2Conductive metal oxide structures in non-volatile re-writable memory devicesUNITY SEMICONDUCTOR CORP·Filed 2016·Granted Sep 19, 2017·1 cites·20 claims
- 1066US8565006B2Conductive metal oxide structures in non volatile re writable memory devicesSCHLOSS LAWRENCE·Filed 2012·Granted Oct 22, 2013·2 cites·16 claims
- 1165US9293702B2Conductive metal oxide structures in non-volatile re-writable memory devicesUNITY SEMICONDUCTOR CORP·Filed 2014·Granted Mar 22, 2016·1 cites·20 claims
- 1259US10803935B2Conductive metal oxide structures in non-volatile re-writable memory devicesUNITY SEMICONDUCTOR CORP·Filed 2019·Granted Oct 13, 2020·0 cites·20 claims
- 1359US8358529B2Conductive metal oxide structures in non-volatile re-writable memory devicesUNITY SEMICONDUCTOR CORP·Filed 2011·Granted Jan 22, 2013·1 cites·30 claims
- 1455US10311950B2Conductive metal oxide structures in non-volatile re-writable memory devicesUNITY SEMICONDUCTOR CORP·Filed 2017·Granted Jun 4, 2019·0 cites·20 claims
- 1550US2010155723A1Memory stack claddingUNITY SEMICONDUCTOR CORP·Filed 2009·Application pending·0 cites
- 1646US8493771B2Non-volatile memory device ion barrierSCHLOSS LAWRENCE·Filed 2012·Granted Jul 23, 2013·0 cites·32 claims
- 1746US2011151617A1Memory and methods of forming the same to enhance scalability of non-volatile two-terminal memory cellsUNITY SEMICONDUCTOR CORP·Filed 2009·Application pending·0 cites
- 1840US2013043452A1Structures And Methods For Facilitating Enhanced Cycling Endurance Of Memory Accesses To Re-Writable Non Volatile Two Terminal Memory ElementsUNITY SEMICONDUCTOR CORP·Filed 2011·Application pending·0 cites
- 1935US8395928B2Threshold device for a memory arrayBREWER JULIE CASPERSON·Filed 2011·Granted Mar 12, 2013·0 cites·27 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →