Inventor · disambiguated record
Jung-Hao Chang
Also filed as: CHANG JUNG-HAO
23 granted patents·13 pending applications·28 citations·filing 2013–2025
93Inventor score
Top patents by PatentIndex Score
36 records- 0196US11476365B2Fin field effect transistor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 18, 2022·4 cites·20 claims
- 0295US11769822B2Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 26, 2023·2 cites·20 claims
- 0391US11107907B2Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 31, 2021·4 cites·20 claims
- 0489US11011413B2Interconnect structures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 18, 2021·6 cites·20 claims
- 0588US12103845B2Micro-electromechanical system and method for fabricating MEMS having protection wallUNITED MICROELECTRONICS CORP·Filed 2020·Granted Oct 1, 2024·2 cites·20 claims
- 0688US10957779B2Gate etch back with reduced loading effectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Mar 23, 2021·3 cites·20 claims
- 0787US12396205B2Semiconductor device having fins and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 19, 2025·0 cites·20 claims
- 0886US2025294791A1Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0985US10157751B1Method for manufacturing semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 18, 2018·3 cites·20 claims
- 1084US12356646B2Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 8, 2025·0 cites·20 claims
- 1183US10737932B2Micro-electro-mechanical system structure and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2019·Granted Aug 11, 2020·2 cites·18 claims
- 1281US12027625B2Semiconductor device having fins and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 2, 2024·0 cites·20 claims
- 1381US2024063288A1Gate etch back with reduced loading effectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1480US11183580B2Structure and formation method of semiconductor device with metal gate stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 23, 2021·2 cites·20 claims
- 1580US2025105019A1Semiconductor manufacturing methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1679US11843041B2Gate etch back with reduced loading effectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 12, 2023·0 cites·20 claims
- 1778US12441606B2MEMS device including coil structure with corrugated polymer filmUNITED MICROELECTRONICS CORP·Filed 2022·Granted Oct 14, 2025·0 cites·8 claims
- 1876US2025056860A1Semiconductor device structure with metal gate stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1975US12198939B2Technique for semiconductor manufacturingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 14, 2025·0 cites·20 claims
- 2075US11522065B2Gate etch back with reduced loading effectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 6, 2022·0 cites·20 claims
- 2175US2024387693A1Spacer Structure For Semiconductor DeviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2275US2024379333A1Ion Beam Etching Apparatus And MethodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2374US2024425366A1Micro-electromechanical system and method for fabricating mems having protection wallUNITED MICROELECTRONICS CORP·Filed 2024·Application pending·0 cites
- 2472US11515423B2Semiconductor device having finsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 29, 2022·0 cites·20 claims
- 2571US11373878B2Technique for semiconductor manufacturingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 28, 2022·0 cites·20 claims
- 2670US12087558B2Ion beam etching apparatus and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 10, 2024·0 cites·20 claims
- 2769US12218219B2Spacer structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 4, 2025·0 cites·20 claims
- 2868US12154969B2Semiconductor device structure with metal gate stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 26, 2024·0 cites·20 claims
- 2968US2023030411A1Fin field effect transistor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 3062US10680109B2CMOS semiconductor device having fins and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 9, 2020·0 cites·20 claims
- 3161US2025313455A1Microelectromechanical systems device and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2024·Application pending·0 cites
- 3259US10755943B2Method for manufacturing semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 25, 2020·0 cites·20 claims
- 3358US2025226307A1Semiconductor device with improved metal-filling quality of metal gate via and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3454US2023406692A1Microelectromechanical system (mems) microphone and fabrication method thereofUNITED MICROELECTRONICS CORP·Filed 2022·Application pending·0 cites
- 3551US2025006742A1Stacked multi-gate device with low contact via resistance and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3648US2015060119A1Conductive structure and manufacturing method thereofNAT UNIV TSING HUA·Filed 2013·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →