Inventor · disambiguated record

Jun Chen

Also filed as: CHEN JUN · CHEN JUN-YAO

70 granted patents·18 pending applications·326 citations·filing 2013–2025

98Inventor score

Technology areasH10W H01L H10P H10D H10N

Files withYANGTZE MEMORY TECH CO LTD66 TAIWAN SEMICONDUCTOR MFG CO LTD14 AQUAHYDREX PTY LTD4 AQUAHYDREX INC1 QUALCOMM INC1

Top patents by PatentIndex Score

88 records

0198US11133325B2Memory cell structure of a three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Sep 28, 2021·14 cites·9 claims
0298US10283452B2Three-dimensional memory devices having a plurality of NAND stringsYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted May 7, 2019·61 cites·13 claims
0398US10147732B1Source structure of three-dimensional memory device and method for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Dec 4, 2018·66 cites·21 claims
0497US11758732B2Hybrid bonding contact structure of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Sep 12, 2023·3 cites·20 claims
0597US11527547B2Hybrid bonding contact structure of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Dec 13, 2022·3 cites·20 claims
0697US10930661B2Embedded pad structures of three-dimensional memory devices and fabrication methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Feb 23, 2021·16 cites·8 claims
0797US10923491B2Hybrid bonding contact structure of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Feb 16, 2021·4 cites·20 claims
0897US10593690B2Hybrid bonding contact structure of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Mar 17, 2020·21 cites·20 claims
0996US11856868B2Magnetic tunnel junction structures and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·2 cites·20 claims
1096US11355696B2Magnetic tunnel junction structures and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 7, 2022·5 cites·19 claims
1195US11659775B2Embedded MRAM fabrication process for ion beam etching with protection by top electrode spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 23, 2023·2 cites·20 claims
1294US11031333B2Three-dimensional memory devices having a plurality of NAND stringsYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Jun 8, 2021·8 cites·19 claims
1394US10580788B2Methods for forming three-dimensional memory devicesYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Mar 3, 2020·14 cites·20 claims
1493US9871255B2Modular electrochemical cellsAQUAHYDREX PTY LTD·Filed 2014·Granted Jan 16, 2018·11 cites·52 claims
1592US11211397B2Three-dimensional memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Dec 28, 2021·6 cites·14 claims
1692US10680003B2Staircase structure for memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Jun 9, 2020·6 cites·12 claims
1792US10672711B2Word line contact structure for three-dimensional memory devices and fabrication methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Jun 2, 2020·7 cites·19 claims
1892US10637068B2Modular electrochemical cellsAQUAHYDREX INC·Filed 2017·Granted Apr 28, 2020·5 cites·23 claims
1992US10026967B2Composite three-dimensional electrodes and methods of fabricationAQUAHYDREX PTY LTD·Filed 2014·Granted Jul 17, 2018·11 cites·40 claims
2091US11276642B2Method for forming three-dimensional integrated wiring structure and semiconductor structure thereofYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Mar 15, 2022·2 cites·19 claims
2191US10867678B2Three-dimensional memory devicesYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Dec 15, 2020·8 cites·19 claims
2291US10679941B2Method for forming three-dimensional integrated wiring structure and semiconductor structure thereofYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Jun 9, 2020·6 cites·12 claims
2390US11991880B2Three-dimensional memory devices and fabricating methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted May 21, 2024·2 cites·9 claims
2490US10748851B1Hybrid bonding using dummy bonding contacts and dummy interconnectsYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Aug 18, 2020·6 cites·20 claims
2589US11462503B2Hybrid bonding using dummy bonding contactsYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Oct 4, 2022·2 cites·10 claims
2689US10515975B1Method for forming dual-deck channel hole structure of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Dec 24, 2019·6 cites·20 claims
2788US11205619B2Hybrid bonding using dummy bonding contacts and dummy interconnectsYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Dec 21, 2021·2 cites·9 claims
2888US2025024683A1Hybrid bonding contact structure of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
2987US10840125B2Memory structure and method for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Nov 17, 2020·6 cites·18 claims
3086US10784225B2Bonded semiconductor structures having bonding contacts made of indiffusible conductive materials and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Sep 22, 2020·4 cites·16 claims
3186US10644015B2Memory cell structure of a three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted May 5, 2020·3 cites·9 claims
3286US2025031366A1Staircase structure for memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
3385US12317754B2Magnetic tunnel junction structures and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 27, 2025·0 cites·20 claims
3484US12137568B2Hybrid bonding contact structure of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2023·Granted Nov 5, 2024·0 cites·20 claims
3583US12256647B2Embedded MRAM fabrication process for ion beam etching with protection by top electrode spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 18, 2025·0 cites·20 claims
3683US11145666B2Staircase structure for memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Oct 12, 2021·1 cites·20 claims
3782US11049834B2Hybrid bonding using dummy bonding contactsYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Jun 29, 2021·3 cites·20 claims
3882US10847528B2Memory cell structure of a three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Nov 24, 2020·1 cites·20 claims
3982US10804279B2Source structure of three-dimensional memory device and method for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Oct 13, 2020·4 cites·16 claims
4082US2025275484A1Magnetic tunnel junction structures and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4181US12137558B2Staircase structure for memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Nov 5, 2024·0 cites·20 claims
4281US11043506B2Three-dimensional memory device having a shielding layer and method for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Jun 22, 2021·2 cites·28 claims
4380US11063208B2Embedded MRAM fabrication process for ion beam etching with protection by top electrode spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 13, 2021·1 cites·20 claims
4480US10796993B2Method for forming three-dimensional integrated wiring structure and semiconductor structure thereofYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Oct 6, 2020·1 cites·20 claims
4580US2024381785A1Method and structure for improved memory integrity at array boundariesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4676US12010838B2Staircase structure for memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Jun 11, 2024·0 cites·20 claims
4775US12219773B2Embedded pad structures of three-dimensional memory devices and fabrication methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Feb 4, 2025·0 cites·10 claims
4875US10910390B2Memory device and forming method thereofYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Feb 2, 2021·1 cites·20 claims
4975US2023422504A1Three-dimensional memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
5074US2025324915A1Manufacturing method of memory device with removal of top electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites

Showing the top 50 of 88 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →