Inventor · disambiguated record
Jung-Hee Chung
Also filed as: CHUNG JUNG-HEE
21 granted patents·11 pending applications·118 citations·filing 2003–2012
95Inventor score
Files withSAMSUNG ELECTRONICS CO LTD27CHUNG JUNG-HEE1CHUNG SEUNG-SIK1KWON OH-SEONG1SAMSUG ELECTRONICS CO LTD1
Top patents by PatentIndex Score
32 records- 0191US7723770B2Integrated circuit capacitors having composite dielectric layers therein containing crystallization inhibiting regionsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 25, 2010·15 cites·21 claims
- 0283US7442604B2Methods and batch type atomic layer deposition apparatus for forming dielectric films and methods of manufacturing metal-insulator-metal capacitors including the dielectric filmsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 28, 2008·8 cites·32 claims
- 0381US7973352B2Capacitors having composite dielectric layers containing crystallization inhibiting regionsSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Jul 5, 2011·4 cites·11 claims
- 0481US7655519B2Methods of fabricating metal-insulator-metal capacitors with a chemical barrier layer in a lower electrodeSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 2, 2010·9 cites·19 claims
- 0579US7482242B2Capacitor, method of forming the same, semiconductor device having the capacitor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jan 27, 2009·8 cites·4 claims
- 0678US7425761B2Method of manufacturing a dielectric film in a capacitorSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Sep 16, 2008·6 cites·20 claims
- 0777US7364967B2Methods of forming storage capacitors for semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 29, 2008·6 cites·10 claims
- 0870US7700454B2Methods of forming integrated circuit electrodes and capacitors by wrinkling a layer that includes a high percentage of impuritiesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Apr 20, 2010·4 cites·35 claims
- 0968US7495292B2Integrated circuit devices having pad contact plugs in the cell array and peripheral circuit regions of the integrated circuit substrateSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Feb 24, 2009·3 cites·22 claims
- 1066US9059330B2Methods of forming integrated circuit capacitors having composite dielectric layers therein containing crystallization inhibiting regionsSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted Jun 16, 2015·1 cites·21 claims
- 1166US7422943B2Semiconductor device capacitors with oxide-nitride layers and methods of fabricating such capacitorsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Sep 9, 2008·3 cites·21 claims
- 1265US7049232B2Methods for forming ruthenium films with β-diketone containing ruthenium complexes and method for manufacturing metal-insulator-metal capacitor using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted May 23, 2006·8 cites·26 claims
- 1362US7179739B2Methods of forming a semiconductor device including a metal silicide layer between a conductive plug and a bottom electrode of a capacitorSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Feb 20, 2007·10 cites·21 claims
- 1461US7008837B2Method of manufacturing capacitor by performing multi-stepped wet treatment on surface of electrodeSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Mar 7, 2006·7 cites·26 claims
- 1559US6995071B2Methods of forming MIM type capacitor structures using low temperature plasma processingSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Feb 7, 2006·6 cites·15 claims
- 1658US7781819B2Semiconductor devices having a contact plug and fabrication methods thereofSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 24, 2010·1 cites·20 claims
- 1757US6849517B2Methods of forming capacitors including reducing exposed electrodes in semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Feb 1, 2005·7 cites·29 claims
- 1855US7205219B2Methods of forming integrated circuits devices having pad contact plugs in the cell array and peripheral circuit regions of the integrated circuit substrateSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Apr 17, 2007·5 cites·19 claims
- 1953US7304367B2Metal-insulator-metal capacitors including transition metal silicide films on doped polysilicon contact plugsSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Dec 4, 2007·6 cites·9 claims
- 2053US2010117194A1Metal-insulator-metal capacitors with a chemical barrier layer in a lower electrodeSAMSUNG ELECTRONICS CO LTD·Filed 2009·Application pending·0 cites
- 2152US8344439B2Integrated circuit capacitors having composite dielectric layers therein containing crystallization inhibiting regions and methods of forming sameSAMSUNG ELECTRONICS CO LTD·Filed 2011·Granted Jan 1, 2013·0 cites·15 claims
- 2251US8481398B2Method of forming semiconductor device having a capacitorCHUNG SEUNG-SIK·Filed 2010·Granted Jul 9, 2013·1 cites·20 claims
- 2349US2006148193A1Methods for forming ruthenium films with beta-diketone containing ruthenium complexes and method for manufacturing metal-insulator-metal capacitor using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 2448US2008185624A1Storage capacitors for semiconductor devicesSAMSUG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 2544US2009130457A1Dielectric structureSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 2644US2009072349A1Semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 2743US2007026625A1Method of fabricating metal-insulator-metal capacitorCHUNG JUNG-HEE·Filed 2006·Application pending·0 cites
- 2842US2006172484A1Method of forming a thin layer and method of manufacturing a flash memory device and a capacitor using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 2941US2006046378A1Methods of fabricating MIM capacitor employing metal nitride layer as lower electrodeSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 3040US2007236863A1Capacitors and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 3139US2005059206A1Integrated circuit devices having barrier layers between upper electrodes and dielectric layers and methods of fabricating the sameFiled 2004·Application pending·0 cites
- 3233US2010209595A1Methods of Forming Strontium Ruthenate Thin Films and Methods of Manufacturing Capacitors Including the SameKWON OH-SEONG·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →