Storage capacitors for semiconductor devices

Abstract

Methods of forming a storage capacitor include forming an interlayer insulation layer having an opening there through on a semiconductor substrate, forming a contact plug in the opening, forming a molding oxide layer on the interlayer insulation layer and the contact plug, selectively removing portions of the molding oxide layer to form a recess above the contact plug, forming a titanium layer on a bottom surface and side surfaces of the recess, forming a titanium nitride layer on the titanium layer, and forming a titanium oxide nitride layer on the titanium nitride layer. A storage capacitor includes a semiconductor substrate, an interlayer insulation layer having a contact plug therein on the substrate, and a storage electrode on the contact plug including a titanium silicide layer, a titanium nitride layer on the titanium silicide layer, and a titanium oxide nitride layer on the titanium nitride layer.

1 . A storage capacitor, comprising:
 a semiconductor substrate;   an interlayer insulation layer on the semiconductor substrate and having a contact plug formed therein; and   a storage electrode on the contact plug, the storage electrode comprising a titanium silicide layer on the contact plug, a titanium nitride layer on the titanium silicide layer, and a titanium oxide nitride layer on the titanium nitride layer.   
   
   
       2 . The storage capacitor of  claim 1 , further comprising:
 a dielectric layer on the storage electrode; and   a plate electrode on the dielectric layer.   
   
   
       3 . The storage capacitor of  claim 1 , wherein the titanium nitride layer has thickness of about 300 Å. 
   
   
       4 . The storage capacitor of  claim 1 , wherein the titanium oxide nitride layer has thickness of from about 10 Å to about 30 Å. 
   
   
       5 . The storage capacitor of  claim 1 , wherein the storage electrode is cylindrical. 
   
   
       6 . The storage capacitor of  claim 1 , further comprising a second titanium nitride layer on the titanium oxide nitride layer.