Inventor · disambiguated record
Hyeon-Deok Lee
Also filed as: LEE HYEON-DEOK
30 granted patents·14 pending applications·277 citations·filing 1996–2011
97Inventor score
Files withSAMSUNG ELECTRONICS CO LTD33CHOI KYUNG-IN1KIM YOUNG JIN1SAMSUG ELECTRONICS CO LTD1YOU YOUNG-SUB1
Top patents by PatentIndex Score
44 records- 0188US7741222B2Etch stop structure and method of manufacture, and semiconductor device and method of manufactureSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jun 22, 2010·17 cites·11 claims
- 0283US8304343B2Method of manufacturing a metal wiring structureCHOI KYUNG-IN·Filed 2011·Granted Nov 6, 2012·6 cites·22 claims
- 0383US7504725B2Semiconductor memory device having low-resistance tungsten line and method of manufacturing the semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Mar 17, 2009·30 cites·27 claims
- 0483US7125774B2Method of manufacturing transistor having recessed channelSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Oct 24, 2006·28 cites·18 claims
- 0582US7563677B2Recessed gate electrode and method of forming the same and semiconductor device having the recessed gate electrode and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 21, 2009·11 cites·8 claims
- 0680US7410869B2Method of manufacturing a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Aug 12, 2008·7 cites·14 claims
- 0777US7364967B2Methods of forming storage capacitors for semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 29, 2008·6 cites·10 claims
- 0874US6623798B2Chemical vapor deposition method for depositing silicide and apparatus for performing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Sep 23, 2003·13 cites·14 claims
- 0971US6607654B2Copper-plating elecrolyte containing polyvinylpyrrolidone and method for forming a copper interconnectSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Aug 19, 2003·15 cites·19 claims
- 1070US7524724B2Method of forming titanium nitride layer and method of fabricating capacitor using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 28, 2009·4 cites·39 claims
- 1170US6964922B2Methods for forming metal interconnections for semiconductor devices having multiple metal depositionsSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Nov 15, 2005·13 cites·26 claims
- 1269US8053374B2Method of manufacturing a metal wiring structureSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Nov 8, 2011·3 cites·11 claims
- 1369US6010940AMethods for fabricating CVD TiN barrier layers for capacitor structuresSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Jan 4, 2000·37 cites·5 claims
- 1465US5742472AStacked capacitors for integrated circuit devices and related methodsSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Apr 21, 1998·25 cites·28 claims
- 1564US6673718B1Methods for forming aluminum metal wiringsSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Jan 6, 2004·12 cites·46 claims
- 1663US7119392B2Storage electrode of a semiconductor device and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 10, 2006·2 cites·21 claims
- 1762US6372616B1Method of manufacturing an electrical interconnection of a semiconductor device using an erosion protecting plug in a contact hole of interlayer dielectric layerSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Apr 16, 2002·13 cites·16 claims
- 1859US6747354B2Semiconductor devices having multilevel interconnections and methods for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jun 8, 2004·8 cites·34 claims
- 1959US6399457B2Semiconductor device having capacitor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Jun 4, 2002·5 cites·8 claims
- 2058US6905960B2Method of forming a contact in a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jun 14, 2005·9 cites·13 claims
- 2153US6774029B2Method for forming a conductive film and a conductive pattern of a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Aug 10, 2004·4 cites·24 claims
- 2252US7311109B2Method for cleaning a processing chamber and method for manufacturing a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Dec 25, 2007·3 cites·16 claims
- 2349US7238585B2Method of forming a storage electrode of a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 3, 2007·0 cites·20 claims
- 2448US2008185624A1Storage capacitors for semiconductor devicesSAMSUG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 2547US2006145269A1Semiconductor device having a capping layer including cobalt and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 2646US7135407B2Method of manufacturing a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Nov 14, 2006·3 cites·18 claims
- 2746US6913979B2Method of manufacturing a metal oxide semiconductor transistorSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jul 5, 2005·2 cites·34 claims
- 2846US2007272950A1Semiconductor memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 2945US7122468B2Methods of fabricating integrated circuit conductive contact structures including groovesSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 17, 2006·0 cites·10 claims
- 3042US7119029B2Method of oxidizing a silicon substrate and method of forming an oxide layer using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Oct 10, 2006·0 cites·14 claims
- 3142US7037828B2Semiconductor device having a capping layer including cobalt and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 2, 2006·0 cites·12 claims
- 3242US2003219536A1Chemical vapor deposition method for depositing silicide and apparatus for performing the sameFiled 2003·Application pending·0 cites
- 3341US2004045503A1Method for treating a surface of a reaction chamberFiled 2003·Application pending·0 cites
- 3440US2005136686A1Gap-fill method using high density plasma chemical vapor deposition process and method of manufacturing integrated circuit deviceFiled 2004·Application pending·0 cites
- 3539US2005266640A1Method of forming a dielectric layer and method of manufacturing a nonvolatile memory device using the sameYOU YOUNG-SUB·Filed 2005·Application pending·0 cites
- 3639US2005101143A1Methods of fabricating a semiconductor device and forming a trench region in a semiconductor deviceFiled 2004·Application pending·0 cites
- 3739US2006160337A1Method of manufacturing a hemisperical grain silicon layer and method of manufacturing a semiconductor device using the sameKIM YOUNG-JIN·Filed 2005·Application pending·0 cites
- 3839US2006281289A1Method of forming polycide layer and method of manufacturing semiconductor device having polycide layerSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 3938US2004259344A1Method for forming a metal layer method for manufacturing a semiconductor device using the sameFiled 2004·Application pending·0 cites
- 4037US7008844B2Method of forming a gate of a non-volatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Mar 7, 2006·0 cites·11 claims
- 4137US2004000717A1Integrated circuit conductive contact structures including grooves and fabrication methods thereofFiled 2003·Application pending·0 cites
- 4236US2002041028A1Method for forming damascene interconnection of semiconductor device and damascene interconnection fabricated therebyFiled 2001·Application pending·0 cites
- 4336US2006267019A1Capacitor and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 4431US6261890B1Semiconductor device having capacitor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Jul 17, 2001·1 cites·8 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →