Inventor · disambiguated record
Jurgen Faul
Also filed as: FAUL JUERGEN · FAUL JURGEN · FAUL JüRGEN
15 granted patents·2 pending applications·307 citations·filing 1997–2024
93Inventor score
Top patents by PatentIndex Score
17 records- 0196US7078325B2Process for producing a doped semiconductor substrateINFINEON TECHNOLOGIES AG·Filed 2001·Granted Jul 18, 2006·135 cites·17 claims
- 0283US6828191B1Trench capacitor with an insulation collar and method for producing a trench capacitorSIEMENS AG·Filed 1999·Granted Dec 7, 2004·53 cites·8 claims
- 0378US6509599B1Trench capacitor with insulation collar and method for producing the trench capacitorSIEMENS AG·Filed 1999·Granted Jan 21, 2003·41 cites·5 claims
- 0474US9773811B2Reducing antenna effects in SOI devicesGLOBALFOUNDRIES INC·Filed 2016·Granted Sep 26, 2017·3 cites·20 claims
- 0572US12347688B2Lateral transistor with self-aligned body implantINFINEON TECH DRESDEN GMBH & CO KG·Filed 2024·Granted Jul 1, 2025·0 cites·7 claims
- 0667US6174741B1Method for quantifying proximity effect by measuring device performanceSIEMENS AG·Filed 1997·Granted Jan 16, 2001·32 cites·13 claims
- 0765US10141229B2Process for forming semiconductor layers of different thickness in FDSOI technologiesGLOBALFOUNDRIES INC·Filed 2016·Granted Nov 27, 2018·1 cites·18 claims
- 0865US6943116B2Method for fabricating a p-channel field-effect transistor on a semiconductor substrateINFINEON TECHNOLOGIES AG·Filed 2003·Granted Sep 13, 2005·12 cites·9 claims
- 0962US6664167B2Memory with trench capacitor and selection transistor and method for fabricating itINFINEON TECHNOLOGIES AG·Filed 2002·Granted Dec 16, 2003·9 cites·24 claims
- 1061US6326262B1Method for fabricating epitaxy layerINFINEON TECHNOLOGIES AG·Filed 2000·Granted Dec 4, 2001·8 cites·10 claims
- 1154US7118955B2Method for the production of a semiconductor substrate comprising a plurality of gate stacks on a semiconductor substrate, and corresponding semiconductor structureINFINEON TECHNOLOGIES AG·Filed 2004·Granted Oct 10, 2006·6 cites·8 claims
- 1254US6967133B2Method for fabricating a semiconductor structureINFINEON TECHNOLOGIES AG·Filed 2003·Granted Nov 22, 2005·4 cites·15 claims
- 1350US7259060B2Method for fabricating a semiconductor structureINFINEON TECHNOLOGIES AG·Filed 2004·Granted Aug 21, 2007·3 cites·10 claims
- 1446US7679120B2Method for the production of a semiconductor substrate comprising a plurality of gate stacks on a semiconductor substrate, and corresponding semiconductor structureQIMONDA AG·Filed 2006·Granted Mar 16, 2010·0 cites·4 claims
- 1546US2009121286A1Integrated Circuit Comprising a Field Effect Transistor and Method of Fabricating the SameQIMONDA AG·Filed 2007·Application pending·0 cites
- 1641US2009098701A1Method of manufacturing an integrated circuitFAUL JURGEN·Filed 2007·Application pending·0 cites
- 1740US10775826B2Back-gate biasing voltage divider topology circuit structureGLOBALFOUNDRIES INC·Filed 2018·Granted Sep 15, 2020·0 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →