Inventor · disambiguated record
Jung-Yu Hsieh
Also filed as: HSIEH JUNG-YU
23 granted patents·10 pending applications·460 citations·filing 2001–2018
94Inventor score
Files withMACRONIX INT CO LTD19GLOBALFOUNDRIES INC4CHARTERED SEMICONDUCTOR MFG1CHIANG CHUN LING1LU CHI-PIN1
Top patents by PatentIndex Score
33 records- 0198US7450423B2Methods of operating non-volatile memory cells having an oxide/nitride multilayer insulating structureMACRONIX INT CO LTD·Filed 2007·Granted Nov 11, 2008·278 cites·24 claims
- 0295US6638879B2Method for forming nitride spacer by using atomic layer depositionMACRONIX INT CO LTD·Filed 2001·Granted Oct 28, 2003·108 cites·16 claims
- 0380US8026136B2Methods of forming low hydrogen concentration charge-trapping layer structures for non-volatile memoryMACRONIX INT CO LTD·Filed 2007·Granted Sep 27, 2011·7 cites·20 claims
- 0480US7939432B2Method of improving intrinsic gettering ability of waferMACRONIX INT CO LTD·Filed 2008·Granted May 10, 2011·6 cites·11 claims
- 0580US6536130B1Overlay mark for concurrently monitoring alignment accuracy, focus, leveling and astigmatism and method of application thereofUNITED MICROELECTRONICS CORP·Filed 2001·Granted Mar 25, 2003·24 cites·14 claims
- 0671US8969205B2Double patterning via triangular shaped sidewall spacersGLOBALFOUNDRIES INC·Filed 2013·Granted Mar 3, 2015·2 cites·16 claims
- 0769US8581322B2Nonvolatile memory device and method for making the sameLU CHI-PIN·Filed 2011·Granted Nov 12, 2013·4 cites·11 claims
- 0868US9368453B2Overlay mark dependent dummy fill to mitigate gate height variationGLOBALFOUNDRIES INC·Filed 2015·Granted Jun 14, 2016·1 cites·15 claims
- 0966US6777764B2ONO interpoly dielectric for flash memory cells and method for fabricating the same using a single wafer low temperature deposition processMACRONIX INT CO LTD·Filed 2002·Granted Aug 17, 2004·10 cites·14 claims
- 1065US7763935B2ONO formation of semiconductor memory device and method of fabricating the sameMACRONIX INT CO LTD·Filed 2005·Granted Jul 27, 2010·3 cites·9 claims
- 1164US8022465B2Low hydrogen concentration charge-trapping layer structures for non-volatile memoryMACRONRIX INTERNAT CO LTD·Filed 2005·Granted Sep 20, 2011·4 cites·9 claims
- 1262US7704865B2Methods of forming charge-trapping dielectric layers for semiconductor memory devicesMACRONIX INT CO LTD·Filed 2005·Granted Apr 27, 2010·2 cites·20 claims
- 1362US7521321B2Method of fabricating a non-volatile semiconductor memory deviceMACRONIX INT CO LTD·Filed 2007·Granted Apr 21, 2009·2 cites·17 claims
- 1456US7118968B2Method for manufacturing interpoly dielectricMACRONIX INT CO LTD·Filed 2004·Granted Oct 10, 2006·7 cites·11 claims
- 1554US10816483B2Double pass diluted ultraviolet reticle inspectionGLOBALFOUNDRIES INC·Filed 2018·Granted Oct 27, 2020·0 cites·12 claims
- 1654US9252061B2Overlay mark dependent dummy fill to mitigate gate height variationGLOBALFOUNDRIES INC·Filed 2014·Granted Feb 2, 2016·0 cites·13 claims
- 1752US2010178758A1Methods for fabricating dielectric layer and non-volatile memoryMACRONIX INT CO LTD·Filed 2009·Application pending·0 cites
- 1848US7863132B2Method for fabricating a charge trapping memory deviceMACRONIX INT CO LTD·Filed 2006·Granted Jan 4, 2011·0 cites·26 claims
- 1948US7778072B2Method for fabricating charge-trapping memoryMACRONIX INT CO LTD·Filed 2006·Granted Aug 17, 2010·0 cites·14 claims
- 2047US8183618B2Method for fabricating a charge trapping memory deviceSHIH YEN-HAO·Filed 2010·Granted May 22, 2012·0 cites·7 claims
- 2146US6822284B2ONO dielectric for memory cellsMACRONIX INT CO LTD·Filed 2003·Granted Nov 23, 2004·1 cites·5 claims
- 2244US8106483B2Wafer with improved intrinsic gettering abilityCHIANG CHUN-LING·Filed 2011·Granted Jan 31, 2012·0 cites·12 claims
- 2343US6511907B1Method for forming a low loss dielectric layer in the tungsten chemical mechanic grinding processMACRONIX INT CO LTD·Filed 2001·Granted Jan 28, 2003·1 cites·14 claims
- 2443US2010210085A1Method for fabricating non-volatile memoryMACRONIX INT CO LTD·Filed 2010·Application pending·0 cites
- 2542US2007298583A1Method for forming a shallow trench isolation regionMACRONIX INT CO LTD·Filed 2006·Application pending·0 cites
- 2641US8022466B2Non-volatile memory cells having a polysilicon-containing, multi-layer insulating structure, memory arrays including the same and methods of operating the sameMACRONIX INT CO LTD·Filed 2006·Granted Sep 20, 2011·0 cites·31 claims
- 2740US2009179307A1Integrated circuit system employing feed-forward controlCHARTERED SEMICONDUCTOR MFG·Filed 2008·Application pending·0 cites
- 2836US2010059809A1Non-volatile memory and method of fabricating the sameMACRONIX INT CO LTD·Filed 2008·Application pending·0 cites
- 2935US2006148197A1Method for forming shallow trench isolation with rounded corners by using a clean processWU CHIA-WEI·Filed 2005·Application pending·0 cites
- 3034US2003109111A1Method for forming an ONO structure in one chamberMACRONIX INT CO LTD·Filed 2001·Application pending·0 cites
- 3134US2003025148A1Structure of a flash memoryFiled 2001·Application pending·0 cites
- 3234US2003030099A1Flash memory structureFiled 2001·Application pending·0 cites
- 3332US2004166632A1Method of fabricating flash memoryFiled 2003·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →