Inventor · disambiguated record
Jungwoo Joh
Also filed as: JOH JUNGWOO
26 granted patents·23 pending applications·81 citations·filing 2012–2024
94Inventor score
Top patents by PatentIndex Score
49 records- 0197US8759879B1RESURF III-nitride HEMTsTEXAS INSTRUMENTS INC·Filed 2013·Granted Jun 24, 2014·42 cites·20 claims
- 0293US9882041B1HEMT having conduction barrier between drain fingertip and sourceTEXAS INSTRUMENTS INC·Filed 2016·Granted Jan 30, 2018·8 cites·8 claims
- 0389US9054027B2III-nitride device and method having a gate isolating structureTEXAS INSTRUMENTS INC·Filed 2013·Granted Jun 9, 2015·9 cites·20 claims
- 0487US10014231B1Method and apparatus to model and monitor time dependent dielectric breakdown in multi-field plate gallium nitride devicesTEXAS INSTRUMENTS INC·Filed 2017·Granted Jul 3, 2018·5 cites·11 claims
- 0584US2025063755A1Gallium nitride transistor with a doped regionTEXAS INSTRUMENTS INC·Filed 2024·Application pending·0 cites
- 0683US12166119B2Gallium nitride transistor with a doped regionTEXAS INSTRUMENTS INC·Filed 2023·Granted Dec 10, 2024·0 cites·18 claims
- 0781US9476933B2Apparatus and methods for qualifying HEMT FET devicesTEXAS INSTRUMENTS INC·Filed 2014·Granted Oct 25, 2016·6 cites·20 claims
- 0881US8789109B2System for recommending favorite channel/program based on TV watching pattern and method thereofKOREA ELECTRONICS TELECOMM·Filed 2012·Granted Jul 22, 2014·5 cites·14 claims
- 0980US10680093B2HEMT having conduction barrier between drain fingertip and sourceTEXAS INSTRUMENTS INC·Filed 2018·Granted Jun 9, 2020·2 cites·20 claims
- 1077US9553151B2III-nitride device and method having a gate isolating structureTEXAS INSTRUMENTS INC·Filed 2015·Granted Jan 24, 2017·2 cites·20 claims
- 1176US11067620B2HEMT wafer probe current collapse screeningTEXAS INSTRUMENTS INC·Filed 2019·Granted Jul 20, 2021·1 cites·20 claims
- 1274US11769824B2Gallium nitride transistor with a doped regionTEXAS INSTRUMENTS INC·Filed 2021·Granted Sep 26, 2023·0 cites·22 claims
- 1374US2024429233A1Fringe capacitor, integrated circuit and manufacturing process for the fringe capacitorTEXAS INSTRUMENTS INC·Filed 2024·Application pending·0 cites
- 1472US2024274705A1Normally-on gallium nitride based transistor with p-type gateTEXAS INSTRUMENTS INC·Filed 2024·Application pending·0 cites
- 1570US10192799B2Method and apparatus to model and monitor time dependent dielectric breakdown in multi-field plate gallium nitride devicesTEXAS INSTRUMENTS INC·Filed 2018·Granted Jan 29, 2019·1 cites·20 claims
- 1669US12046666B2Gallium nitride (GaN) based transistor with multiple p-GaN blocksTEXAS INSTRUMENTS INC·Filed 2021·Granted Jul 23, 2024·0 cites·27 claims
- 1769US11177378B2HEMT having conduction barrier between drain fingertip and sourceTEXAS INSTRUMENTS INC·Filed 2020·Granted Nov 16, 2021·0 cites·20 claims
- 1867US12444600B2Gallium nitride device having a combination of surface passivation layersTEXAS INSTRUMENTS INC·Filed 2021·Granted Oct 14, 2025·0 cites·25 claims
- 1964US12113062B2Fringe capacitor, integrated circuit and manufacturing process for the fringe capacitorTEXAS INSTRUMENTS INC·Filed 2020·Granted Oct 8, 2024·0 cites·20 claims
- 2063US10964803B2Gallium nitride transistor with a doped regionTEXAS INSTRUMENTS INC·Filed 2018·Granted Mar 30, 2021·0 cites·11 claims
- 2162US11888027B2Monolithic integration of high and low-side GaN FETs with screening back gating effectTEXAS INSTRUMENTS INC·Filed 2021·Granted Jan 30, 2024·0 cites·20 claims
- 2260US11978790B2Normally-on gallium nitride based transistor with p-type gateTEXAS INSTRUMENTS INC·Filed 2020·Granted May 7, 2024·0 cites·24 claims
- 2360US2025311315A1Semiconductor devices with guard ring structuresTEXAS INSTRUMENTS INC·Filed 2024·Application pending·0 cites
- 2459US11049960B2Gallium nitride (GaN) based transistor with multiple p-GaN blocksTEXAS INSTRUMENTS INC·Filed 2019·Granted Jun 29, 2021·0 cites·16 claims
- 2559US2025142866A1Self-aligned gate structureTEXAS INSTRUMENTS INC·Filed 2024·Application pending·0 cites
- 2658US10707324B2Group IIIA-N HEMT with a tunnel diode in the gate stackTEXAS INSTRUMENTS INC·Filed 2019·Granted Jul 7, 2020·0 cites·21 claims
- 2757US12027468B2Strapped copper interconnect for improved electromigration reliabilityTEXAS INSTRUMENTS INC·Filed 2021·Granted Jul 2, 2024·0 cites·28 claims
- 2857US2025301680A1Semiconductor devices in integrated circuit having different threshold voltagesTEXAS INSTRUMENTS INC·Filed 2024·Application pending·0 cites
- 2957US2025098266A1Group iii-n device including source contact connected to substrate through trenchTEXAS INSTRUMENTS INC·Filed 2024·Application pending·0 cites
- 3057US2025120157A1Semiconductor device with slanted field plateTEXAS INSTRUMENTS INC·Filed 2024·Application pending·0 cites
- 3156US2025006593A1Substrate contact integration in gallium nitride devicesTEXAS INSTRUMENTS INC·Filed 2023·Application pending·0 cites
- 3256US2025287626A1Semiconductor device with drain electrical contact forming junctions having different energy barrier heights to drain layerTEXAS INSTRUMENTS INC·Filed 2024·Application pending·0 cites
- 3356US2025301778A1Semiconductor devices in integrated circuit having different threshold voltagesTEXAS INSTRUMENTS INC·Filed 2024·Application pending·0 cites
- 3456US2025169156A1High electron mobility transistor with integrated diodeTEXAS INSTRUMENTS INC·Filed 2024·Application pending·0 cites
- 3556US2025311409A1Etch stop architectures for power device and passive componentsTEXAS INSTRUMENTS INC·Filed 2024·Application pending·0 cites
- 3655US9112011B2FET dielectric reliability enhancementTEXAS INSTRUMENTS INC·Filed 2014·Granted Aug 18, 2015·0 cites·8 claims
- 3754US2025048667A1Semiconductor device with gate electrical contact forming junctions having different energy barrier heights to gate layerTEXAS INSTRUMENTS INC·Filed 2023·Application pending·0 cites
- 3853US10381456B2Group IIIA-N HEMT with a tunnel diode in the gate stackTEXAS INSTRUMENTS INC·Filed 2017·Granted Aug 13, 2019·0 cites·20 claims
- 3953US2024322006A1High band-gap devices with self-aligned contactTEXAS INSTRUMENTS INC·Filed 2023·Application pending·0 cites
- 4053US2024405024A1Integrated devices with conductive barrier structureTEXAS INSTRUMENTS INC·Filed 2023·Application pending·0 cites
- 4152US8916427B2FET dielectric reliability enhancementTEXAS INSTRUMENTS INC·Filed 2013·Granted Dec 23, 2014·0 cites·12 claims
- 4252US2024332369A1Field plates for integrated circuitsTEXAS INSTRUMENTS INC·Filed 2023·Application pending·0 cites
- 4350US10861943B2Transistor with multiple GaN-based alloy layersTEXAS INSTRUMENTS INC·Filed 2018·Granted Dec 8, 2020·0 cites·17 claims
- 4450US2024213333A1Iii-n device with planarized topological structureTEXAS INSTRUMENTS INC·Filed 2022·Application pending·0 cites
- 4549US2023134698A1Apparatus and method to control threshold voltage and gate leakage current for gan-based semiconductor devicesTEXAS INSTRUMENTS INC·Filed 2021·Application pending·0 cites
- 4649US2024047529A1Gan devices with modified heterojunction structure and methods of making thereofTEXAS INSTRUMENTS INC·Filed 2022·Application pending·0 cites
- 4747US2023101543A1Gallium-nitride device field-plate systemTEXAS INSTRUMENTS INC·Filed 2021·Application pending·0 cites
- 4847US2022231156A1Drain contact extension layout for hard switching robustnessTEXAS INSTRUMENTS INC·Filed 2021·Application pending·0 cites
- 4945US2022130988A1Electronic device with enhancement mode gallium nitride transistor, and method of making sameTEXAS INSTRUMENTS INC·Filed 2020·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →