Inventor · disambiguated record
Jun Lu
Also filed as: LU JUN · Lu jun-feng
15 granted patents·1 pending application·136 citations·filing 1999–2023
91Inventor score
Files withAPPLIED MATERIALS INC7VARIAN SEMICONDUCTOR EQUIPMENT ASS INC4AXCELIS TECH INC2VARIAN SEMICONDUCTOR EQUIPMENT2KELLERMAN PETER L1
Top patents by PatentIndex Score
16 records- 0193US11569063B2Apparatus, system and method for energy spread ion beamAPPLIED MATERIALS INC·Filed 2021·Granted Jan 31, 2023·2 cites·20 claims
- 0293US9978554B1Dual cathode ion sourceVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2017·Granted May 22, 2018·9 cites·19 claims
- 0391US8129695B2System and method for controlling deflection of a charged particle beam within a graded electrostatic lensKELLERMAN PETER L·Filed 2009·Granted Mar 6, 2012·15 cites·19 claims
- 0484US11201057B2Techniques and apparatus for anisotropic stress compensation in substrates using ion implantationAPPLIED MATERIALS INC·Filed 2019·Granted Dec 14, 2021·3 cites·14 claims
- 0583US12347687B2Etch rate modulation of FinFET through high-temperature ion implantationAPPLIED MATERIALS INC·Filed 2020·Granted Jul 1, 2025·1 cites·19 claims
- 0683US10446372B2Dual cathode ion sourceVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2018·Granted Oct 15, 2019·2 cites·13 claims
- 0776US6194734B1Method and system for operating a variable aperture in an ion implanterAXCELIS TECH INC·Filed 1999·Granted Feb 27, 2001·32 cites·19 claims
- 0875US7166854B2Uniformity control multiple tilt axes, rotating wafer and variable scan velocityVARIAN SEMICONDUCTOR EQUIPMENT·Filed 2004·Granted Jan 23, 2007·17 cites·20 claims
- 0971US11114277B2Dual cathode ion sourceVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2020·Granted Sep 7, 2021·0 cites·18 claims
- 1071US6207964B1Continuously variable aperture for high-energy ion implanterAXCELIS TECH INC·Filed 1999·Granted Mar 27, 2001·48 cites·20 claims
- 1166US10741361B2Dual cathode ion sourceVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2019·Granted Aug 11, 2020·0 cites·18 claims
- 1265US11875995B2Techniques and apparatus for anisotropic stress compensation in substrates using ion implantationAPPLIED MATERIALS INC·Filed 2021·Granted Jan 16, 2024·0 cites·12 claims
- 1362US11574796B1Dual XY variable aperture in an ion implantation systemAPPLIED MATERIALS INC·Filed 2021·Granted Feb 7, 2023·0 cites·19 claims
- 1461US7161161B2Uniformity control using multiple fixed wafer orientations and variable scan velocityVARIAN SEMICONDUCTOR EQUIPMENT·Filed 2004·Granted Jan 9, 2007·7 cites·22 claims
- 1557US2024130117A1Methods for forming dram devices without trench fill voidsAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 1647US11942324B2Method for BEOL metal to dielectric adhesionAPPLIED MATERIALS INC·Filed 2020·Granted Mar 26, 2024·0 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →