Inventor · disambiguated record
Jyun-De Wu
Also filed as: WU JYUN-DE
49 granted patents·26 pending applications·45 citations·filing 2012–2025
96Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD35PLAYNITRIDE DISPLAY CO LTD15PLAYNITRIDE INC12GENESIS PHOTONICS INC10LAI YEN-LIN1
Top patents by PatentIndex Score
75 records- 0197US11581218B2Etch profile control of gate contact openingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 14, 2023·5 cites·20 claims
- 0296US12057345B2Etch profile control of gate contact openingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 6, 2024·2 cites·20 claims
- 0396US11996321B2Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 28, 2024·4 cites·20 claims
- 0496US11664272B2Etch profile control of gate contact openingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 30, 2023·3 cites·20 claims
- 0594US9590139B1Light emitting modulePLAYNITRIDE INC·Filed 2016·Granted Mar 7, 2017·14 cites·16 claims
- 0693US11961893B2Contacts for semiconductor devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 16, 2024·2 cites·20 claims
- 0793US9147800B2Nitride semiconductor structure and semiconductor light emitting device including the sameGENESIS PHOTONICS INC·Filed 2013·Granted Sep 29, 2015·7 cites·31 claims
- 0888US2025364327A1Integrated circuit structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0987US2025366018A1Etch profile control of via openingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1087US2025359293A1Etch profile control of via openingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1187US2025364323A1Integrated circuit structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1285US2025351501A1Contacts for semiconductor devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1384US11705491B2Etch profile control of gate contact openingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 18, 2023·1 cites·20 claims
- 1484US2025338594A1Conductive capping for work function layer and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1581US12349395B2Inter block for recessed contacts and methods forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 1, 2025·0 cites·20 claims
- 1681US12107003B2Etch profile control of gate contact openingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 1, 2024·0 cites·20 claims
- 1780US12446296B2Etch profile control of via openingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 14, 2025·0 cites·20 claims
- 1880US2025301694A1Inter block for recessed contacts and methods forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1979US2024395607A1Etch profile control of gate contact openingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2078US2024266218A1Integrated circuit structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2178US2024371956A1Conductive capping for work function layer and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2277US2024250143A1Contacts for semiconductor devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2375US2024387266A1Recessed contacts at line end and methods forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2475US2024363408A1Semiconductor devices and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2574US2023335435A1Integrated circuit structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2673US2023361185A1Etch profile control of via openingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2772US11967526B2Integrated circuit structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 23, 2024·0 cites·20 claims
- 2872US11967622B2Inter block for recessed contacts and methods forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 23, 2024·0 cites·20 claims
- 2972US2025019829A1Semiconductor wafer carrier structure and metal-organic chemical vapor deposition devicePLAYNITRIDE DISPLAY CO LTD·Filed 2024·Application pending·0 cites
- 3071US12119386B2Conductive capping for work function layer and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 15, 2024·0 cites·20 claims
- 3171US11728212B2Integrated circuit structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 15, 2023·0 cites·20 claims
- 3271US8872157B2Nitride semiconductor structure and semiconductor light emitting device including the sameGENESIS PHOTONICS INC·Filed 2013·Granted Oct 28, 2014·1 cites·11 claims
- 3370US11942371B2Etch profile control of via openingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 26, 2024·0 cites·20 claims
- 3470US10411159B2Patterned substrate and light emitting diode waferPLAYNITRIDE INC·Filed 2018·Granted Sep 10, 2019·1 cites·16 claims
- 3570US2024079409A1Semiconductor device structure with conductive via structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3669US12080597B2Semiconductor devices and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 3, 2024·0 cites·20 claims
- 3769US11749732B2Etch profile control of via openingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 5, 2023·0 cites·20 claims
- 3869US2023326978A1Etch profile control of gate contact openingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3968US12107007B2Recessed contacts at line end and methods forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 1, 2024·0 cites·20 claims
- 4068US10193023B2Light-emitting diode chipPLAYNITRIDE INC·Filed 2017·Granted Jan 29, 2019·1 cites·11 claims
- 4168US10109768B2Light emitting diode chipPLAYNITRIDE INC·Filed 2017·Granted Oct 23, 2018·1 cites·11 claims
- 4268US9837793B1Semiconductor light-emitting devicePLAYNITRIDE INC·Filed 2017·Granted Dec 5, 2017·1 cites·10 claims
- 4368US9741896B2Semiconductor light-emitting devicePLAYNITRIDE INC·Filed 2016·Granted Aug 22, 2017·1 cites·14 claims
- 4463US11810919B2Semiconductor device structure with conductive via structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 7, 2023·0 cites·20 claims
- 4562US9048364B2Nitride semiconductor structure and semiconductor light emitting device including the sameGENESIS PHOTONICS INC·Filed 2013·Granted Jun 2, 2015·0 cites·8 claims
- 4662US8766307B2Light emitting diode deviceLAI YEN-LIN·Filed 2013·Granted Jul 1, 2014·1 cites·13 claims
- 4761US11658268B2Light-emitting semiconductor structure and light-emitting semiconductor substratePLAYNITRIDE DISPLAY CO LTD·Filed 2020·Granted May 23, 2023·0 cites·9 claims
- 4861US11567124B2Wafter, wafer testing system, and method thereofPLAYNITRIDE DISPLAY CO LTD·Filed 2020·Granted Jan 31, 2023·0 cites·17 claims
- 4959US10381511B2Nitride semiconductor structure and semiconductor light emitting device including the sameGENESIS PHOTONICS INC·Filed 2017·Granted Aug 13, 2019·0 cites·18 claims
- 5059USRE47088ENitride semiconductor structure and semiconductor light emitting device including the sameGENESIS PHOTONICS INC·Filed 2017·Granted Oct 16, 2018·0 cites·31 claims
Showing the top 50 of 75 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →