Nitride semiconductor structure and semiconductor light emitting device including the same

Abstract

A nitride semiconductor structure and a semiconductor light emitting device are revealed. The semiconductor light emitting device includes a substrate disposed with a first type doped semiconductor layer and a second type doped semiconductor layer. A light emitting layer is disposed between the first type doped semiconductor layer and the second type doped semiconductor layer. The second type doped semiconductor layer is doped with a second type dopant at a concentration larger than 5×10 19 cm −3 while a thickness of the second type doped semiconductor layer is smaller than 30 nm. Thereby the semiconductor light emitting device provides a better light emitting efficiency.

What is claimed is: 
     
       1. A nitride semiconductor structure comprising:
 a first type doped semiconductor layer, 
 a second type doped semiconductor layer, 
 a light emitting layer disposed between the first type doped semiconductor layer and the second type doped semiconductor layer; 
 a hole supply layer disposed between the light emitting layer and the second type doped semiconductor layer, wherein the hole supply layer is made of Al x1 In y1 Ga 1-x1-y1 N (0<x1<1, 0<y1<1, and 0<x1+y1<1) GaN-based semiconductor comprising Al and In; the hole supply layer is doped with a second type dopant at a concentration larger than 10 18  cm −3 ; and 
 a second type carrier blocking layer disposed between the hole supply layer and the second type doped semiconductor layer, wherein the second type carrier blocking layer is made of Al x2 Ga 1-x2 N, wherein 0<x2<1 GaN-based semiconductor comprising Al; 
 wherein the second type doped semiconductor layer is doped with the second type dopant at a concentration larger than 5×10 19  cm −3 and a thickness of the second type doped semiconductor layer is smaller than 30 nm. 
 
     
     
       2. The nitride semiconductor structure as claimed in  claim 1 , wherein the hole supply layer is doped with a Group IV-A element at a concentration ranging from 10 17  cm −3  to 10 20  cm −3 . 
     
     
       3. The nitride semiconductor structure as claimed in  claim 1 , wherein the light emitting layer has a multiple quantum well (MQW) structure and a band gap of the hole supply layer is larger than a band gap of a well layer of the MQW structure. 
     
     
       4. The nitride semiconductor structure as claimed in  claim 1 , wherein the light emitting layer has a multiple quantum well (MQW) structure including a plurality well layers and barrier layers stacked alternately;
 one of the well layers is disposed between every two barrier layers; 
 the barrier layer is made of Al x4 In y2 Ga 1-x4-y2 N while x4 and y2 satisfy the conditions: 0<x4<1, 0<y2<1, and 0<x4+y2<1 GaN-based semiconductor; the well layer is made of In z Ga 1-z N (0<z<1) GaN-based semiconductor comprising In. 
 
     
     
       5. The nitride semiconductor structure as claimed in  claim 4 , wherein a thickness of the well layer is ranging from 3.5 nm to 7 mm. 
     
     
       6. The nitride semiconductor structure as claimed in  claim 4 , wherein the barrier layer is doped with a first type dopant at a concentration ranging from 10 16  cm −3  to 10 18  cm −3 . 
     
     
       7. The nitride semiconductor structure as claimed in  claim 1 , wherein a first type carrier blocking layer is disposed between the light emitting layer and the first type doped semiconductor layer; the first type carrier blocking layer is made of Al x3 Ga 1-x3 N, wherein 0<x3<1 GaN-based semiconductor comprising Al. 
     
     
       8. A semiconductor light emitting device comprising:
 a substrate; 
 a first type doped semiconductor layer disposed over the substrate; 
 a first type carrier blocking layer disposed on the first type doped semiconductor layer, wherein the first type carrier blocking layer is made of Al x3 Ga 1-x3 N, where 0<x3<1 GaN-based semiconductor comprising Al; 
 a light emitting layer disposed over the first type doped semiconductor layer; 
 a hole supply layer disposed on light emitting layer, wherein the hole supply layer is made of Al x1 In y1 Ga 1-x1-y1 N where 0<x1<1, 0<y1<1, 0<x1+y1<1 GaN-based semiconductor comprising Al and In; 
 a second type carrier blocking layer disposed on the hole supply layer, wherein the second type carrier blocking layer is made of Al x2 Ga 1-x2 N, wherein 0<x2<1 GaN-based semiconductor comprising Al; 
 a second type doped semiconductor layer disposed over the light emitting layer, doped with a second type dopant at a concentration larger than 5×10 19  cm −3 , and having a thickness smaller than 30 nm; 
 a first type electrode disposed on and in ohmic contact with the first type doped semiconductor layer,; and 
 a second type electrode disposed on and in ohmic contact with the second type doped semiconductor layer. 
 
     
     
       9. The semiconductor light emitting device as claimed in  claim 8 , wherein the hole supply layer is doped with a Group IV-A element at a concentration ranging from 10 17  cm −3  to 10 20  cm  −3 . 
     
     
       10. The semiconductor light emitting device as claimed in  claim 8 , wherein the light emitting layer has a multiple quantum well (MQW) structure and a band gap of the hole supply layer is larger than a band gap of a well layer of the MQW structure. 
     
     
       11. The semiconductor light emitting device as claimed in  claim 8 , wherein the light emitting layer has a multiple quantum well (MQW) structure including a plurality well layers and barrier layers stacked alternately;
 one of the well layers is disposed between every two barrier layers; 
 the barrier layer is made of Al x In y2 Ga 1-x4-y2 N while x4 and y2 satisfy the conditions: 0<x4<1, 0<y2<1, and 0<x4+y2<1 GaN-based semiconductor; the well layer is made of In z Ga 1-z N (0<z<1) GaN-based semiconductor comprising In. 
 
     
     
       12. The semiconductor light emitting device as claimed in  claim 11 , wherein a thickness of the well layer is ranging from 3.5 nm to 7 nm. 
     
     
       13. The semiconductor light emitting device as claimed in  claim 11 , wherein the barrier layer is doped with a first type dopant at a concentration ranging from 10 16  cm −3  to 10 18  cm −3 . 
     
     
       14. A nitride semiconductor structure comprising:
 a first type doped semiconductor layer, 
 a second type doped semiconductor layer, 
 a light emitting layer disposed between the first type doped semiconductor layer and the second type doped semiconductor layer,; and 
 a hole supply layer disposed between the light emitting layer and the second type doped semiconductor layer,;  
 wherein the second type doped semiconductor layer is doped with a second type dopant at a concentration larger than 5×10 19  cm −3 , a thickness of the second type doped semiconductor layer is smaller than 30 nm, and the hole supply layer is doped with a Group IV-A element. 
 
     
     
       15. The nitride semiconductor structure as claimed in  claim 14 , wherein the hole supply layer is made of Al x1 In y1 Ga 1-x1-y1 N (0<x1<1, 0<y1<1, and 0<x1+y1<1) GaN-based semiconductor comprising Al and In; the hole supply layer is doped with the second type dopant at a concentration larger than 10 18  cm −3 . 
     
     
       16. The nitride semiconductor structure as claimed in  claim 14 , wherein the hole supply layer is doped with the Group IV-A element at a concentration ranging from 10 17  cm −3  to 10 20  cm −3 . 
     
     
       17. The nitride semiconductor structure as claimed in  claim 14 , wherein the light emitting layer has a multiple quantum well (MQW) structure and a band gap of the hole supply layer is larger than a band gap of a well layer of the MQW structure. 
     
     
       18. The nitride semiconductor structure as claimed in  claim 14 , wherein the light emitting layer has a multiple quantum well (MQW) structure including a plurality well layers and barrier layers stacked alternately;
 one of the well layers is disposed between every two barrier layers; 
 the barrier layer is made of Al x4 In y2 Ga 1-x4-y2 N while x4 and y2 satisfy the conditions: 0<x4<1, 0<y2<1, and 0<x4+y2<1 GaN-based semiconductor; the well layer is made of In z Ga 1-z N (0<z<1) GaN-based semiconductor comprising In. 
 
     
     
       19. The nitride semiconductor structure as claimed in  claim 18 , wherein a thickness of the well layer is ranging from 3.5 nm to 7 nm. 
     
     
       20. The nitride semiconductor structure as claimed in  claim 18 , wherein the barrier layer is doped with a first type dopant at a concentration ranging from 10 16  cm −3  to 10 18  cm −3 . 
     
     
       21. The nitride semiconductor structure as claimed in claim  16  14, wherein a second type carrier blocking layer is disposed between the hole supply layer and the second type doped semiconductor layer; the second type carrier blocking layer is made of Al x2 Ga 1-x2 N, wherein 0<x2<1 GaN-based semiconductor comprising Al. 
     
     
       22. The nitride semiconductor structure as claimed in  claim 14 , wherein a first type carrier blocking layer is disposed between the light emitting layer and the first type doped semiconductor layer, the first type carrier blocking layer is made of Al x3 Ga 1-x3 N, wherein 0<x3<1 GaN-based semiconductor comprising Al. 
     
     
       23. A semiconductor light emitting device comprising:
 a substrate; 
 a first type doped semiconductor layer disposed over the substrate; 
 a light emitting layer disposed over the first type doped semiconductor layer; 
 a second type doped semiconductor layer disposed over the light emitting layer, doped with a second type dopant at a concentration larger than 5×10 19  cm −3 , and having a thickness smaller than 30 nm; 
 a hole supply layer disposed between the light emitting layer and the second type doped semiconductor layer, wherein the hole supply layer is doped with a Group IV-A element; 
 a first type electrode disposed on and in ohmic contact with the first type doped semiconductor layer,; and 
 a second type electrode disposed on and in ohmic contact with the second type doped semiconductor layer. 
 
     
     
       24. The nitride semiconductor structure semiconductor light emitting device as claimed in  claim 23 , wherein the hole supply layer is made of Al x1 In y1 Ga 1-x1-y1 N, wherein 0<x1<1, 0<y1<1, and 0<x1+y1<1 GaN-based semiconductor comprising Al and In. 
     
     
       25. The nitride semiconductor structure semiconductor light emitting device as claimed in  claim 23 , wherein the hole supply layer is doped with the Group IV-A element at a concentration ranging from 10 17  cm −3  to 10 20  cm −3 . 
     
     
       26. The nitride semiconductor structure semiconductor light emitting device as claimed in  claim 23 , wherein the light emitting layer has a multiple quantum well (MQW) structure and a band gap of the hole supply layer is larger than a band gap of a well layer of the MQW structure. 
     
     
       27. The nitride semiconductor structure semiconductor light emitting device as claimed in  claim 23 , wherein the light emitting layer has a multiple quantum well (MQW) structure including a plurality well layers and barrier layers stacked alternately;
 one of the well layers is disposed between every two barrier layers; 
 the barrier layer is made of Al x4 In y2 Ga 1-x4-y2 N while x4 and y2 satisfy the conditions: 0<x4<1, 0<y2<1, and 0<x4+y2<1 GaN-based semiconductor; the well layer is made of In z Ga 1-z N, where 0<z<1 GaN-based semiconductor comprising In. 
 
     
     
       28. The nitride semiconductor structure semiconductor light emitting device as claimed in  claim 27 , wherein a thickness of the well layer is ranging from 3.5 nm to 7 nm. 
     
     
       29. The nitride semiconductor structure semiconductor light emitting device as claimed in  claim 27 , wherein the barrier layer is doped with a first type dopant at a concentration ranging from 10 16  cm −3  to 10 18  cm −3 . 
     
     
       30. The nitride semiconductor structure semiconductor light emitting device as claimed in  claim 23 , wherein a second type carrier blocking layer is disposed between the hole supply layer and the second type doped semiconductor layer; the second type carrier blocking layer is made of Al x2 Ga 1-x2 N, wherein 0<x2<1 GaN-based semiconductor comprising Al. 
     
     
       31. The nitride semiconductor structure semiconductor light emitting device as claimed in  claim 23 , wherein a first type carrier blocking layer is disposed between the light emitting layer and the first type doped semiconductor layer, the first type carrier blocking layer is made of Al x3 Ga 1-x3 N, wherein 0<x3<1 GaN-based semiconductor comprising Al.