Inventor · disambiguated record
Kate Abel
Also filed as: ABEL KATE
3 granted patents·6 pending applications·6 citations·filing 2022–2024
56Inventor score
Files withTOKYO ELECTRON LTD9
Top patents by PatentIndex Score
9 records- 0191US12398324B1Methods for controlling the pitch of self-assembled ionic liquid crystal (ILC) structuresTOKYO ELECTRON LTD·Filed 2024·Granted Aug 26, 2025·5 cites·22 claims
- 0284US12506011B2Methods for wet atomic layer etching of transition metal oxide dielectric materialsTOKYO ELECTRON LTD·Filed 2023·Granted Dec 23, 2025·1 cites·22 claims
- 0364US2025368898A1Methods for controlling the phase of self-assembled ionic liquid crystal (ilc) structuresTOKYO ELECTRON LTD·Filed 2024·Application pending·0 cites
- 0457US2025273471A1Methods To Improve Etch Uniformity Across A Semiconductor Substrate When Etching With A Hydrofluoric Acid (HF) And Nitric Acid (HNO3) SolutionTOKYO ELECTRON LTD·Filed 2024·Application pending·0 cites
- 0554US2025224282A1Integrated optical nanothermometry for real-time wafer temperature monitoring during processingTOKYO ELECTRON LTD·Filed 2024·Application pending·0 cites
- 0652US2025293039A1Methods for wet atomic layer etching of silicon dioxideTOKYO ELECTRON LTD·Filed 2024·Application pending·0 cites
- 0749US2025308929A1Methods for wet atomic layer etching of tungsten using halogenationTOKYO ELECTRON LTD·Filed 2024·Application pending·0 cites
- 0847US12506014B2Methods for non-isothermal wet atomic layer etchingTOKYO ELECTRON LTD·Filed 2022·Granted Dec 23, 2025·0 cites·21 claims
- 0947US2025308917A1Methods for wet atomic layer etching of tungstenTOKYO ELECTRON LTD·Filed 2024·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →