Inventor · disambiguated record
Kazutami Arimoto
Also filed as: ARIMOTO KAZUTAMI
195 granted patents·6 pending applications·8,235 citations·filing 1984–2021
99Inventor score
Files withMITSUBISHI ELECTRIC CORP164RENESAS TECH CORP21SHIMANO HIROKI3ARIMOTO KAZUTAMI2DENDRITIK DESIGN INC2
Top patents by PatentIndex Score
201 records- 0199US6151244ADynamic semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Nov 21, 2000·462 cites·16 claims
- 0299US5726946ASemiconductor integrated circuit device having hierarchical power source arrangementMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Mar 10, 1998·224 cites·22 claims
- 0399US5610533ASwitched substrate bias for logic circuitsMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Mar 11, 1997·262 cites·15 claims
- 0499US4977542ADynamic semiconductor memory device of a twisted bit line system having improved reliability of readoutMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Dec 11, 1990·446 cites·21 claims
- 0598US8274841B2Semiconductor signal processing deviceSHIMANO HIROKI·Filed 2012·Granted Sep 25, 2012·413 cites·10 claims
- 0698US6449204B1Dynamic semiconductor memory device capable of rearranging data storage from a one bit/one cell scheme in a normal mode to a one bit/two cell scheme in a twin-cell mode for lengthening a refresh intervalMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Sep 10, 2002·190 cites·29 claims
- 0798US5646900ASense amplifier including MOS transistors having threshold voltages controlled dynamically in a semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Jul 8, 1997·314 cites·31 claims
- 0897US6232793B1Switched backgate bias for FETMITSUBISHI ELECTRIC CORP·Filed 1998·Granted May 15, 2001·140 cites·8 claims
- 0996US8089819B2Semiconductor device and semiconductor signal processing apparatusNODA HIDEYUKI·Filed 2010·Granted Jan 3, 2012·30 cites·9 claims
- 1096US7738312B2Semiconductor memory deviceRENESAS TECH CORP·Filed 2007·Granted Jun 15, 2010·53 cites·25 claims
- 1196US7139208B2Refresh-free dynamic semiconductor memory deviceRENESAS TECH CORP·Filed 2005·Granted Nov 21, 2006·40 cites·6 claims
- 1296US6452859B1Dynamic semiconductor memory device superior in refresh characteristicsMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Sep 17, 2002·122 cites·35 claims
- 1396US6256252B1Memory-embedded semiconductor integrated circuit device having low power consumptionMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Jul 3, 2001·120 cites·20 claims
- 1496US5838047ACMOS substrate biasing for threshold voltage controlMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Nov 17, 1998·140 cites·13 claims
- 1595US8130582B2Semiconductor signal processing deviceSHIMANO HIROKI·Filed 2009·Granted Mar 6, 2012·35 cites·28 claims
- 1695US6418067B1Semiconductor memory device suitable for merging with logicMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Jul 9, 2002·97 cites·28 claims
- 1795US5226009ASemiconductor memory device supporting cache and method of driving the sameMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Jul 6, 1993·145 cites·15 claims
- 1894US7463501B2Semiconductor memory deviceRENESAS TECH CORP·Filed 2006·Granted Dec 9, 2008·32 cites·16 claims
- 1994US6088286AWord line non-boosted dynamic semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Jul 11, 2000·121 cites·20 claims
- 2094US5703522ASwitched substrate bias for MOS-DRAM circuitsMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Dec 30, 1997·94 cites·13 claims
- 2194US5636163ARandom access memory with a plurality amplifier groups for reading and writing in normal and test modesMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Jun 3, 1997·100 cites·12 claims
- 2294US5510749ACircuitry and method for clamping a boost signalMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Apr 23, 1996·60 cites·22 claims
- 2394US4873669ARandom access memory device operable in a normal mode and in a test modeMITSUBISHI ELECTRIC CORP·Filed 1987·Granted Oct 10, 1989·74 cites·9 claims
- 2493US6785157B2Semiconductor memory device having a memory cell structure of reduced occupying areaRENESAS TECH CORP·Filed 2002·Granted Aug 31, 2004·55 cites·20 claims
- 2593US6134171ASemiconductor integrated circuit device having hierarchical power source arrangementMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Oct 17, 2000·68 cites·6 claims
- 2693US6064621AMulti-bank clock synchronous type semiconductor memory device having improved memory array and power supply arrangementMITSUBISHI ELECTRIC CORP·Filed 1998·Granted May 16, 2000·103 cites·19 claims
- 2793US5838627AArrangement of power supply and data input/output pads in semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Nov 17, 1998·92 cites·32 claims
- 2893US5687123ASemiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Nov 11, 1997·66 cites·42 claims
- 2992US6414890B2Semiconductor memory device capable of reliably performing burn-in test at wafer levelMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Jul 2, 2002·64 cites·16 claims
- 3092US6400625B2Semiconductor integrated circuit device capable of performing operational test for contained memory core at operating frequency higher than that of memory testerMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Jun 4, 2002·66 cites·13 claims
- 3192US6388929B1Semiconductor memory device performing redundancy repair based on operation test and semiconductor integrated circuit device having the sameMITSUBISHI ELECTRIC CORP·Filed 2001·Granted May 14, 2002·71 cites·18 claims
- 3292US5604710AArrangement of power supply and data input/output pads in semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Feb 18, 1997·82 cites·50 claims
- 3391US5798976ASemiconductor memory device with reduced current consumption in data holding modeMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Aug 25, 1998·76 cites·16 claims
- 3491US5249155ASemiconductor device incorporating internal voltage down converting circuitMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Sep 28, 1993·81 cites·35 claims
- 3591US4829484ASemiconductor memory device having self-refresh functionMITSUBISHI ELECTRIC CORP·Filed 1988·Granted May 9, 1989·65 cites·8 claims
- 3690US6643208B2Semiconductor integrated circuit device having hierarchical power source arrangementMITSUBISHI ELECTRIC CORP·Filed 2003·Granted Nov 4, 2003·32 cites·1 claims
- 3790US5822264ADynamic semiconductor memory device with SOI structure and body refresh circuitryMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Oct 13, 1998·84 cites·17 claims
- 3890US5617369ADynamic semiconductor memory device having excellent charge retention characteristicsMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Apr 1, 1997·50 cites·23 claims
- 3989US7480168B2Semiconductor memory deviceRENESAS TECH CORP·Filed 2007·Granted Jan 20, 2009·11 cites·9 claims
- 4089US5872737ASemiconductor integrated circuit device in which influence of power supply noise on internal circuitry during operation of input/output buffer is preventedMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Feb 16, 1999·81 cites·35 claims
- 4189US5854561ASwitched substrate bias for MOS DRAM circuitsMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Dec 29, 1998·59 cites·26 claims
- 4289US5659517ASemiconductor memory device with an improved hierarchical power supply line configurationMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Aug 19, 1997·71 cites·16 claims
- 4389US4947376ACharge-transfer sense amplifier for dram and operating method thereforMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Aug 7, 1990·55 cites·7 claims
- 4489US4922460ASemiconductor memory device with folded bit line structure suitable for high densityMITSUBISHI ELECTRIC CORP·Filed 1989·Granted May 1, 1990·58 cites·9 claims
- 4588US7626883B2Semiconductor memory deviceRENESAS TECH CORP·Filed 2008·Granted Dec 1, 2009·21 cites·8 claims
- 4688US6925022B2Refresh-free dynamic semiconductor memory deviceRENESAS TECH CORP·Filed 2002·Granted Aug 2, 2005·36 cites·7 claims
- 4788US6507532B1Semiconductor memory device having row-related circuit operating at high speedMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Jan 14, 2003·48 cites·29 claims
- 4888US5325336ASemiconductor memory device having power line arranged in a meshed shapeMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Jun 28, 1994·47 cites·20 claims
- 4988US5321646ALayout of a semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Jun 14, 1994·68 cites·40 claims
- 5087US6781915B2Semiconductor memory deviceRENESAS TECH CORP·Filed 2002·Granted Aug 24, 2004·48 cites·11 claims
Showing the top 50 of 201 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →