Inventor · disambiguated record
Kai-Kuen Chang
Also filed as: CHANG KAI-KUEN
16 granted patents·5 pending applications·51 citations·filing 2015–2025
89Inventor score
Files withUNITED MICROELECTRONICS CORP21
Top patents by PatentIndex Score
21 records- 0195US9391196B1High-voltage metal-oxide-semiconductor transistor device and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2015·Granted Jul 12, 2016·20 cites·12 claims
- 0294US9741850B1Semiconductor device and method for forming the sameUNITED MICROELECTRONICS CORP·Filed 2016·Granted Aug 22, 2017·12 cites·25 claims
- 0391US9985129B2High-voltage metal-oxide-semiconductor transistor and fabrication method thereofUNITED MICROELECTRONICS CORP·Filed 2017·Granted May 29, 2018·6 cites·7 claims
- 0487US9859417B2High-voltage metal-oxide-semiconductor transistor and fabrication method thereofUNITED MICROELECTRONICS CORP·Filed 2016·Granted Jan 2, 2018·4 cites·14 claims
- 0585US9728616B2High-voltage metal-oxide-semiconductor transistor device and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2015·Granted Aug 8, 2017·5 cites·24 claims
- 0684US9722072B2Manufacturing method of high-voltage metal-oxide-semiconductor transistorUNITED MICROELECTRONICS CORP·Filed 2016·Granted Aug 1, 2017·4 cites·15 claims
- 0776US2025311269A1Fabricating method of high voltage transistorUNITED MICROELECTRONICS CORP·Filed 2025·Application pending·0 cites
- 0869US12356648B2High voltage transistorUNITED MICROELECTRONICS CORP·Filed 2022·Granted Jul 8, 2025·0 cites·10 claims
- 0968US12342592B2Manufacturing method of high voltage semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2024·Granted Jun 24, 2025·0 cites·10 claims
- 1061US11923435B2High voltage semiconductor device and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2022·Granted Mar 5, 2024·0 cites·13 claims
- 1158US2025227970A1High-voltage semiconductor structure and the forming method thereofUNITED MICROELECTRONICS CORP·Filed 2024·Application pending·0 cites
- 1255US2025240990A1Bipolar junction transistor device and fabrication method thereofUNITED MICROELECTRONICS CORP·Filed 2024·Application pending·0 cites
- 1355US2024355893A1Semiconductor structure and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2023·Application pending·0 cites
- 1453US10586735B2Semiconductor device structure including high voltage MOS deviceUNITED MICROELECTRONICS CORP·Filed 2018·Granted Mar 10, 2020·0 cites·9 claims
- 1553US2024222501A1Semiconductor Device and Fabricating Method ThereofUNITED MICROELECTRONICS CORP·Filed 2023·Application pending·0 cites
- 1650US9922881B2Method for fabricating semiconductor device structure and product thereofUNITED MICROELECTRONICS CORP·Filed 2016·Granted Mar 20, 2018·0 cites·14 claims
- 1748US10312379B2High voltage deviceUNITED MICROELECTRONICS CORP·Filed 2017·Granted Jun 4, 2019·0 cites·18 claims
- 1846US10354878B2Doping method for semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2017·Granted Jul 16, 2019·0 cites·15 claims
- 1946US9947746B2Bipolar junction transistor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2016·Granted Apr 17, 2018·0 cites·17 claims
- 2045US9653558B2Semiconductor structure having a dummy contact and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2015·Granted May 16, 2017·0 cites·20 claims
- 2145US9653343B1Method of manufacturing semiconductor device with shallow trench isolation (STI) having edge profileUNITED MICROELECTRONICS CORP·Filed 2016·Granted May 16, 2017·0 cites·10 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →