Inventor · disambiguated record
Kamesh V. Gadepally
Also filed as: GADEPALLY KAMESH · GADEPALLY KAMESH V · GADEPALLY KAMESH VENKATA
10 granted patents·1 pending application·489 citations·filing 1990–2024
89Inventor score
Top patents by PatentIndex Score
11 records- 0196US5889315ASemiconductor structure having two levels of buried regionsNAT SEMICONDUCTOR CORP·Filed 1995·Granted Mar 30, 1999·231 cites·114 claims
- 0295US5899714AFabrication of semiconductor structure having two levels of buried regionsNAT SEMICONDUCTOR CORP·Filed 1995·Granted May 4, 1999·207 cites·57 claims
- 0365US2025178210A1Collaborative robot system on a mobile cart with a chamber docking systemLAM RES CORP·Filed 2024·Application pending·0 cites
- 0462US7087503B1Shallow self isolated doped implanted silicon processNAT SEMICONDUCTOR CORP·Filed 2005·Granted Aug 8, 2006·2 cites·16 claims
- 0560US6329287B1Process for manufacturing an integrated circuit structure with metal salicide regions and metal salicide exclusion regionsNAT SEMICONDUCTOR CORP·Filed 1999·Granted Dec 11, 2001·17 cites·7 claims
- 0656US12186887B2Collaborative robot system on a mobile cart with a chamber docking systemLAM RES CORP·Filed 2021·Granted Jan 7, 2025·0 cites·27 claims
- 0749US5075257AAerosol deposition and film formation of siliconUNIV ARKANSAS·Filed 1990·Granted Dec 24, 1991·21 cites·22 claims
- 0839US6908833B1Shallow self isolated doped implanted silicon processNAT SEMICONDUCTOR CORP·Filed 2003·Granted Jun 21, 2005·0 cites·8 claims
- 0935US6737343B1Method for manufacturing an integrated circuit structure with limited source salicidationNAT SEMICONDUCTOR CORP·Filed 2001·Granted May 18, 2004·0 cites·13 claims
- 1033US6225666B1Low stress active area silicon island structure with a non-rectangular cross-section profile and method for its formationNAT SEMICONDUCTOR CORP·Filed 1999·Granted May 1, 2001·4 cites·10 claims
- 1132US5173121AApparatus for the deposition and film formation of silicon on substratesUNIV ARKANSAS·Filed 1991·Granted Dec 22, 1992·7 cites·11 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →