Inventor · disambiguated record
Kazunori Hagimoto
Also filed as: HAGIMOTO KAZUNORI
17 granted patents·27 pending applications·52 citations·filing 2003–2023
90Inventor score
Files withSHINETSU HANDOTAI KK22SANKEN ELECTRIC CO LTD13SHIN ETSU HANDOTAI CO LTD7HAGIMOTO KAZUNORI1NANOTECO CORP1
Top patents by PatentIndex Score
44 records- 0186US10586701B2Semiconductor base having a composition graded buffer layer stackSANKEN ELECTRIC CO LTD·Filed 2016·Granted Mar 10, 2020·5 cites·19 claims
- 0285US10115589B2Epitaxial substrate for electronic devices, electronic device, method for producing the epitaxial substrate for electronic devices, and method for producing the electronic deviceSHINETSU HANDOTAI KK·Filed 2015·Granted Oct 30, 2018·4 cites·8 claims
- 0384US9673052B2Silicon-based substrate having first and second portionsSANKEN ELECTRIC CO LTD·Filed 2014·Granted Jun 6, 2017·5 cites·8 claims
- 0481US10833184B2Semiconductor device substrate, semiconductor device, and method for manufacturing semiconductor device substrateSANKEN ELECTRIC CO LTD·Filed 2017·Granted Nov 10, 2020·3 cites·17 claims
- 0580US10553674B2Substrate for semiconductor device, semiconductor device, and method for manufacturing semiconductor deviceSANKEN ELECTRIC CO LTD·Filed 2016·Granted Feb 4, 2020·3 cites·20 claims
- 0680US10529842B2Semiconductor base substance having a boron containing buffer layer, semiconductor device including the same, and methods for manufacturing the semiconductor base substance and the semiconductor deviceSANKEN ELECTRIC CO LTD·Filed 2016·Granted Jan 7, 2020·3 cites·8 claims
- 0774US9876101B2Semiconductor substrate and semiconductor deviceSANKEN ELECTRIC CO LTD·Filed 2015·Granted Jan 23, 2018·2 cites·11 claims
- 0872US7041529B2Light-emitting device and method of fabricating the sameNANOTECO CORP·Filed 2003·Granted May 9, 2006·23 cites·35 claims
- 0971US9966259B2Silicon-based substrate, semiconductor device, and method for manufacturing semiconductor deviceSANKEN ELECTRIC CO LTD·Filed 2017·Granted May 8, 2018·1 cites·8 claims
- 1071US9520286B2Semiconductor substrate, semiconductor device and method of manufacturing the semiconductor deviceSANKEN ELECTRIC CO LTD·Filed 2014·Granted Dec 13, 2016·2 cites·20 claims
- 1164US10068985B2Method for manufacturing semiconductor substrate, method for manufacturing semiconductor device, semiconductor substrate, and semiconductor deviceSANKEN ELECTRIC CO LTD·Filed 2015·Granted Sep 4, 2018·1 cites·8 claims
- 1254US2025063786A1Nitride semiconductor substrate and method for producing sameSHIN ETSU HANDOTAI CO LTD·Filed 2022·Application pending·0 cites
- 1354US2025273587A1Substrate for electronic device and method for producing the sameSHIN ETSU HANDOTAI CO LTD·Filed 2023·Application pending·0 cites
- 1454US2025015085A1Nitride semiconductor substrate and method for manufacturing nitride semiconductor substrateSHINETSU HANDOTAI KK·Filed 2022·Application pending·0 cites
- 1553US2024379352A1Nitride semiconductor substrate and method for manufacturing the sameSHINETSU HANDOTAI KK·Filed 2022·Application pending·0 cites
- 1653US2024321576A1Nitride semiconductor substrate and method for manufacturing the sameSHINETSU HANDOTAI KK·Filed 2022·Application pending·0 cites
- 1753US2024404826A1Method for manufacturing nitride semiconductor wafer, and nitride semiconductor waferSHINETSU HANDOTAI KK·Filed 2022·Application pending·0 cites
- 1853US2024387170A1Nitride semiconductor substrate and method for manufacturing sameSHINETSU HANDOTAI KK·Filed 2022·Application pending·0 cites
- 1953US2024313086A1Substrate for semiconductor device and method for manufacturing the sameSHINETSU HANDOTAI KK·Filed 2022·Application pending·0 cites
- 2053US2025031421A1Substrate for electronic device and method for producing the sameSHIN ETSU HANDOTAI CO LTD·Filed 2022·Application pending·0 cites
- 2153US2024371628A1Method for manufacturing nitride semiconductor substrateSHINETSU HANDOTAI KK·Filed 2022·Application pending·0 cites
- 2252US2025163609A1Method for producing heteroepitaxial filmSHIN ETSU HANDOTAI CO LTD·Filed 2022·Application pending·0 cites
- 2351US2025323037A1Nitride semiconductor substrate and method for producing sameSHIN ETSU HANDOTAI CO LTD·Filed 2022·Application pending·0 cites
- 2451US2024297224A1Nitride semiconductor substrate and manufacturing method thereforSHINETSU HANDOTAI KK·Filed 2022·Application pending·0 cites
- 2550US2024079412A1Nitride semiconductor substrate and manufacturing method thereforSHINETSU HANDOTAI KK·Filed 2022·Application pending·0 cites
- 2650US2024162041A1Method for producing nitride semiconductor waferSHINETSU HANDOTAI KK·Filed 2022·Application pending·0 cites
- 2750US2018245240A1Method for producing semiconductor epitaxial wafer and semiconductor epitaxial waferSHINETSU HANDOTAI KK·Filed 2018·Application pending·0 cites
- 2849US11705330B2Substrate for electronic device and method for producing the sameSHINETSU HANDOTAI KK·Filed 2020·Granted Jul 18, 2023·0 cites·8 claims
- 2949US9938638B2Method for producing semiconductor epitaxial wafer and semiconductor epitaxial waferSHINETSU HANDOTAI KK·Filed 2015·Granted Apr 10, 2018·0 cites·9 claims
- 3049US2025059676A1Nitride semiconductor substrate and method for producing nitride semiconductor substrateSHIN ETSU HANDOTAI CO LTD·Filed 2022·Application pending·0 cites
- 3148US12266520B2Method for manufacturing epitaxial wafer, silicon-based substrate for epitaxial growth, and epitaxial waferSHIN ETSU HANDOTAI CO LTD·Filed 2019·Granted Apr 1, 2025·0 cites·11 claims
- 3248US2023279581A1Method for producing nitride semiconductor wafer and nitride semiconductor waferSHINETSU HANDOTAI KK·Filed 2021·Application pending·0 cites
- 3348US2024355620A1Nitride semiconductor substrate and manufacturing method thereforSHINETSU HANDOTAI KK·Filed 2022·Application pending·0 cites
- 3446US9401420B2Semiconductor deviceSANKEN ELECTRIC CO LTD·Filed 2014·Granted Jul 26, 2016·0 cites·9 claims
- 3544US9281187B2Method for manufacturing nitride semiconductor deviceSHINETSU HANDOTAI KK·Filed 2013·Granted Mar 8, 2016·0 cites·8 claims
- 3644US2024274452A1Wafer marking method, method of producing nitride semiconductor device and nitride semiconductor substrateSHINETSU HANDOTAI KK·Filed 2022·Application pending·0 cites
- 3741US2015028457A1Epitaxial substrate, semiconductor device, and method for manufacturing semiconductor deviceSHINETSU HANDOTAI KK·Filed 2013·Application pending·0 cites
- 3840US2015084163A1Epitaxial substrate, semiconductor device, and method for manufacturing semiconductor deviceSANKEN ELECTRIC CO LTD·Filed 2013·Application pending·0 cites
- 3939US10319587B2Method of manufacturing epitaxial wafer and silicon-based substrate for epitaxial growthSHINETSU HANDOTAI KK·Filed 2015·Granted Jun 11, 2019·0 cites·10 claims
- 4038US2004104395A1Light-emitting device, method of fabricating the same, and OHMIC electrode structure for semiconductor deviceSHINETSU HANDOTAI KK·Filed 2003·Application pending·0 cites
- 4138US2006145177A1Light emitting device and process for fabricating the sameHAGIMOTO KAZUNORI·Filed 2003·Application pending·0 cites
- 4237US2022367188A1Substrate for an electronic device and method for producing the sameSHINETSU HANDOTAI KK·Filed 2020·Application pending·0 cites
- 4334US2017323960A1Epitaxial wafer, semiconductor device, method for producing epitaxial wafer, and method for producing semiconductor deviceSANKEN ELECTRIC CO LTD·Filed 2015·Application pending·0 cites
- 4433US2017133217A1Semiconductor substrate and semiconductor deviceSANKEN ELECTRIC CO LTD·Filed 2015·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Kazunori Hagimoto files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →