Inventor · disambiguated record
Karl D. Hobart
Also filed as: HOBART KARL · HOBART KARL D
72 granted patents·17 pending applications·3,138 citations·filing 1997–2025
99Inventor score
Top patents by PatentIndex Score
89 records- 0198US6323108B1Fabrication ultra-thin bonded semiconductor layersUS NAVY·Filed 1999·Granted Nov 27, 2001·391 cites·48 claims
- 0298US6242324B1Method for fabricating singe crystal materials over CMOS devicesUS NAVY·Filed 1999·Granted Jun 5, 2001·552 cites·47 claims
- 0398US6153495AAdvanced methods for making semiconductor devices by low temperature direct bondingINTERSIL CORP·Filed 1998·Granted Nov 28, 2000·516 cites·83 claims
- 0497US9246305B1Light-emitting devices with integrated diamondKUB FRANCIS J·Filed 2015·Granted Jan 26, 2016·15 cites·12 claims
- 0596US7358152B2Wafer bonding of thinned electronic materials and circuits to high performance substrateUS NAVY·Filed 2005·Granted Apr 15, 2008·33 cites·25 claims
- 0696US6497763B2Electronic device with composite substrateUS NAVY·Filed 2001·Granted Dec 24, 2002·143 cites·40 claims
- 0796US6328796B1Single-crystal material on non-single-crystalline substrateUS NAVY·Filed 1999·Granted Dec 11, 2001·280 cites·37 claims
- 0895US8900939B2Transistor with enhanced channel charge inducing material layer and threshold voltage controlKUB FRANCIS J·Filed 2014·Granted Dec 2, 2014·17 cites·5 claims
- 0994US9006791B2III-nitride P-channel field effect transistor with hole carriers in the channelKUB FRANCIS J·Filed 2014·Granted Apr 14, 2015·12 cites·15 claims
- 1094US8384129B2Transistor with enhanced channel charge inducing material layer and threshold voltage controlUS NAVY·Filed 2010·Granted Feb 26, 2013·19 cites·25 claims
- 1194US8039301B2Gate after diamond transistorUS NAVY·Filed 2008·Granted Oct 18, 2011·28 cites·17 claims
- 1294US6593212B1Method for making electro-optical devices using a hydrogenion splitting techniqueUS NAVY·Filed 2001·Granted Jul 15, 2003·102 cites·26 claims
- 1394US6562127B1Method of making mosaic array of thin semiconductor material of large substratesUS NAVY·Filed 2002·Granted May 13, 2003·267 cites·25 claims
- 1493US11415518B2Mapping and evaluating GaN wafers for vertical device applicationsUS GOV SEC NAVY·Filed 2020·Granted Aug 16, 2022·3 cites·12 claims
- 1593US8872159B2Graphene on semiconductor detectorKUB FRANCIS J·Filed 2012·Granted Oct 28, 2014·8 cites·29 claims
- 1693US8753468B2Method for the reduction of graphene film thickness and the removal and transfer of epitaxial graphene films from SiC substratesCALDWELL JOSHUA D·Filed 2010·Granted Jun 17, 2014·30 cites·6 claims
- 1792US11996840B1Light controlled switch moduleUS GOV SEC NAVY·Filed 2023·Granted May 28, 2024·2 cites·20 claims
- 1892US9196614B2Inverted III-nitride P-channel field effect transistor with hole carriers in the channelKUB FRANCIS J·Filed 2015·Granted Nov 24, 2015·7 cites·15 claims
- 1991US10317210B2Whole angle MEMS gyroscope on hexagonal crystal substrateCHARLES STARK DRAPER LABORATORY INC·Filed 2016·Granted Jun 11, 2019·9 cites·32 claims
- 2091US6803598B1Si-based resonant interband tunneling diodes and method of making interband tunneling diodesUNIV DELAWARE·Filed 2000·Granted Oct 12, 2004·77 cites·53 claims
- 2191US6767749B2Method for making piezoelectric resonator and surface acoustic wave device using hydrogen implant layer splittingUS NAVY·Filed 2002·Granted Jul 27, 2004·70 cites·20 claims
- 2289US7282753B2Vertical conducting power semiconducting devices made by deep reactive ion etchingUS NAVY·Filed 2006·Granted Oct 16, 2007·15 cites·6 claims
- 2389US6274892B1Devices formable by low temperature direct bondingINTERSIL INC·Filed 1998·Granted Aug 14, 2001·101 cites·10 claims
- 2488US9159641B2Nanocrystalline diamond three-dimensional films in patterned semiconductor substratesHOBART KARL D·Filed 2014·Granted Oct 13, 2015·8 cites·8 claims
- 2588US7759186B2Method for fabricating junction termination extension with formation of photosensitive dopant mask to control doping profile and lateral width for high-voltage electronic devicesUS NAVY·Filed 2009·Granted Jul 20, 2010·14 cites·26 claims
- 2688US7132321B2Vertical conducting power semiconductor devices implemented by deep etchUS NAVY·Filed 2002·Granted Nov 7, 2006·42 cites·11 claims
- 2788US6607969B1Method for making pyroelectric, electro-optical and decoupling capacitors using thin film transfer and hydrogen ion splitting techniquesUS NAVY·Filed 2002·Granted Aug 19, 2003·55 cites·1 claims
- 2888US6201342B1Automatically sharp field emission cathodesUS NAVY·Filed 1997·Granted Mar 13, 2001·52 cites·13 claims
- 2987US9685513B2Semiconductor structure or device integrated with diamondKUB FRANCIS J·Filed 2013·Granted Jun 20, 2017·9 cites·20 claims
- 3086US9029833B2Graphene on semiconductor detectorKUB FRANCIS J·Filed 2014·Granted May 12, 2015·3 cites·15 claims
- 3186US7535100B2Wafer bonding of thinned electronic materials and circuits to high performance substratesUS NAVY·Filed 2003·Granted May 19, 2009·31 cites·14 claims
- 3285US10343900B2Material structure and method for deep silicon carbide etchingUS GOV SEC NAVY·Filed 2017·Granted Jul 9, 2019·3 cites·17 claims
- 3385US9466684B2Transistor with diamond gateUS NAVY·Filed 2016·Granted Oct 11, 2016·4 cites·7 claims
- 3485US8648390B2Transistor with enhanced channel charge inducing material layer and threshold voltage controlKUB FRANCIS J·Filed 2013·Granted Feb 11, 2014·6 cites·31 claims
- 3584US9305858B2Nanocrystalline diamond three-dimensional films in patterned semiconductor substratesHOBART KARL D·Filed 2015·Granted Apr 5, 2016·4 cites·20 claims
- 3684US7902513B2Neutron detector with gamma ray isolationUS NAVY·Filed 2009·Granted Mar 8, 2011·14 cites·25 claims
- 3784US6194290B1Methods for making semiconductor devices by low temperature direct bondingINTERSIL CORP·Filed 1998·Granted Feb 27, 2001·74 cites·35 claims
- 3884US6113451AAtomically sharp field emission cathodesUS NAVY·Filed 1999·Granted Sep 5, 2000·38 cites·8 claims
- 3983US9331163B2Transistor with diamond gateKOEHLER ANDREW D·Filed 2014·Granted May 3, 2016·8 cites·11 claims
- 4080US9960266B2Damage-free plasma-enhanced CVD passivation of AlGaN/GaN high electron mobility transistorsUS NAVY·Filed 2017·Granted May 1, 2018·3 cites·27 claims
- 4180US2025338640A1Low resistance light controlled semiconductor switch (lcss)US GOV SEC NAVY·Filed 2025·Application pending·0 cites
- 4278US12376388B2Low resistance photoconductive semiconductor switch (PCSS)US GOV SEC NAVY·Filed 2023·Granted Jul 29, 2025·0 cites·20 claims
- 4378US9490356B2Growth of high-performance III-nitride transistor passivation layer for GaN electronicsUS NAVY·Filed 2016·Granted Nov 8, 2016·2 cites·17 claims
- 4478US6555451B1Method for making shallow diffusion junctions in semiconductors using elemental dopingUS NAVY·Filed 2001·Granted Apr 29, 2003·22 cites·39 claims
- 4577US9275998B2Inverted P-channel III-nitride field effect tansistor with Hole Carriers in the channelKUB FRANCIS J·Filed 2014·Granted Mar 1, 2016·2 cites·19 claims
- 4673US10777644B2Heterojunction devices and methods for fabricating the sameUS GOV SEC NAVY·Filed 2018·Granted Sep 15, 2020·1 cites·15 claims
- 4772US9196703B2Selective deposition of diamond in thermal viasNORTHROP GRUMMAN SYSTEMS CORP·Filed 2014·Granted Nov 24, 2015·3 cites·20 claims
- 4871US8008626B2Neutron detector with gamma ray isolationUS NAVY·Filed 2011·Granted Aug 30, 2011·3 cites·26 claims
- 4971US6787885B2Low temperature hydrophobic direct wafer bondingUS NAVY·Filed 2002·Granted Sep 7, 2004·17 cites·10 claims
- 5070US8445383B2Transparent nanocrystalline diamond contacts to wide bandgap semiconductor devicesHOBART KARL D·Filed 2008·Granted May 21, 2013·5 cites·16 claims
Showing the top 50 of 89 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Karl D. Hobart files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →