Inventor · disambiguated record
Kazuki Isozumi
Also filed as: ISOZUMI KAZUKI
6 granted patents·5 pending applications·8 citations·filing 2019–2025
73Inventor score
Top patents by PatentIndex Score
11 records- 0192US11894298B2Three-dimensional memory device containing amorphous and crystalline blocking dielectric layersSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Feb 6, 2024·2 cites·20 claims
- 0284US11289416B2Three-dimensional memory device containing amorphous and crystalline blocking dielectric layersSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Mar 29, 2022·4 cites·20 claims
- 0382US11758718B2Three dimensional memory device containing truncated channels and method of operating the same with different erase voltages for different bit linesSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Sep 12, 2023·1 cites·20 claims
- 0482US11581049B2System and methods for programming nonvolatile memory having partial select gate drainsSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Feb 14, 2023·1 cites·20 claims
- 0560US2024064985A1Three-dimensional memory device including low-k drain-select-level isolation structures and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2023·Application pending·0 cites
- 0659US2025359050A1Memory device including contoured drain-select-level isolation structures and methods for forming the sameSANDISK TECHNOLOGIES LLC·Filed 2024·Application pending·0 cites
- 0758US2024292627A1Memory device including an electrically conductive layer with a tapered corner and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2024·Application pending·0 cites
- 0858US2024179906A1Stairless three-dimensional memory device and method of making thereof by forming replacement word lines through memory openingsSANDISK TECHNOLOGIES LLC·Filed 2023·Application pending·0 cites
- 0956US12461692B2Select gate bias gradation structure in NAND memorySANDISK TECHNOLOGIES INC·Filed 2024·Granted Nov 4, 2025·0 cites·20 claims
- 1055US11776628B2Systems and methods for adjusting threshold voltage distribution due to semi-circle SGDSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Oct 3, 2023·0 cites·12 claims
- 1149US2025194091A1Source side select gate electrical isolation in nand memory using ion implantationSANDISK TECHNOLOGIES INC·Filed 2025·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →