Inventor · disambiguated record
Kazuhito Kamei
Also filed as: KAMEI KAZUHITO
27 granted patents·11 pending applications·112 citations·filing 1998–2019
93Inventor score
Files withNIPPON STEEL & SUMITOMO METAL CORP10TOYOTA MOTOR CO LTD9KUSUNOKI KAZUHIKO4KAMEI KAZUHITO3SONY CORP3
Top patents by PatentIndex Score
38 records- 0189US6576369B1Graphite powder suitable for negative electrode material of lithium ion secondary batteriesSUMITOMO METAL IND·Filed 1998·Granted Jun 10, 2003·74 cites·15 claims
- 0287US7635413B2Method for preparing silicon carbide single crystalSUMITOMO METAL IND·Filed 2007·Granted Dec 22, 2009·7 cites·11 claims
- 0378US8492774B2Method and apparatus for manufacturing a SiC single crystal filmKUSUNOKI KAZUHIKO·Filed 2011·Granted Jul 23, 2013·5 cites·7 claims
- 0476US9512540B2Method for manufacturing N-type SiC single crystal by solution growth using a mixed gas atmosphereKUSUNOKI KAZUHIKO·Filed 2011·Granted Dec 6, 2016·1 cites·6 claims
- 0569US10450671B2SiC single crystal and method for producing sameTOYOTA MOTOR CO LTD·Filed 2014·Granted Oct 22, 2019·2 cites·9 claims
- 0663US9896778B2Apparatus for producing SiC single crystals and method of producing SiC single crystals using said production apparatusNIPPON STEEL & SUMITOMO METAL CORP·Filed 2014·Granted Feb 20, 2018·0 cites·6 claims
- 0763US8388752B2Method of manufacturing a silicon carbide single crystalKAMEI KAZUHITO·Filed 2011·Granted Mar 5, 2013·2 cites·4 claims
- 0862US9222198B2SiC single crystal wafer and process for production thereofKUSUNOKI KAZUHIKO·Filed 2012·Granted Dec 29, 2015·1 cites·11 claims
- 0961US9617655B2Manufacturing apparatus of SiC single crystal and method for manufacturing SiC single crystalOKADA NOBUHIRO·Filed 2011·Granted Apr 11, 2017·2 cites·4 claims
- 1060US10100432B2Apparatus for producing SiC single crystal and method for producing SiC single crystalTOYOTA MOTOR CO LTD·Filed 2013·Granted Oct 16, 2018·0 cites·13 claims
- 1159US7659033B2Graphite powders suited for negative electrode material of lithium ion secondary batterySONY CORP·Filed 2007·Granted Feb 9, 2010·0 cites·6 claims
- 1258US9982365B2Method for producing SiC single crystalTOYOTA MOTOR CO LTD·Filed 2014·Granted May 29, 2018·0 cites·8 claims
- 1358US9388508B2Manufacturing apparatus of SiC single crystal, jig for use in the manufacturing apparatus, and method for manufacturing SiC single crystalKAMEI KAZUHITO·Filed 2011·Granted Jul 12, 2016·0 cites·12 claims
- 1458US7520930B2Silicon carbide single crystal and a method for its productionSUMITOMO METAL IND·Filed 2004·Granted Apr 21, 2009·4 cites·15 claims
- 1557US7214447B2Graphite powders suited for negative electrode material of lithium ion secondary batterySONY CORP·Filed 2004·Granted May 8, 2007·2 cites·12 claims
- 1656US2016273126A1METHOD FOR PRODUCING SiC SINGLE CRYSTALNIPPON STEEL & SUMITOMO METAL CORP·Filed 2014·Application pending·0 cites
- 1755US10119199B2Method for producing SiC single crystalTOYOTA MOTOR CO LTD·Filed 2016·Granted Nov 6, 2018·0 cites·12 claims
- 1855US2015075419A1METHOD FOR PRODUCING SiC SINGLE CRYSTALTOYOTA MOTOR CO LTD·Filed 2014·Application pending·0 cites
- 1954US10066316B2Method for producing silicon carbide single-crystal ingot and silicon carbide single-crystal ingotSHOWA DENKO KK·Filed 2016·Granted Sep 4, 2018·0 cites·3 claims
- 2054US2016053402A1METHOD FOR PRODUCING SiC SINGLE CRYSTALNIPPON STEEL & SUMITOMO METAL CORP·Filed 2014·Application pending·0 cites
- 2152US2015225871A1SiC SINGLE CRYSTAL PRODUCTION APPARATUS AND METHOD OF PRODUCING SiC SINGLE CRYSTALSNIPPON STEEL & SUMITOMO METAL CORP·Filed 2013·Application pending·0 cites
- 2252US2015225872A1Single crystal production apparatus, crucible for use therein, and method of producing single crystalNIPPON STEEL & SUMITOMO METAL CORP·Filed 2013·Application pending·0 cites
- 2351US9783911B2Apparatus for producing SiC single crystal by solution growth method, and method for producing SiC single crystal by using the production apparatus and crucible used in the production apparatusYASHIRO NOBUYOSHI·Filed 2013·Granted Oct 10, 2017·0 cites·3 claims
- 2450US9920449B2Production method of SiC single crystalTOYOTA MOTOR CO LTD·Filed 2015·Granted Mar 20, 2018·0 cites·4 claims
- 2550US9702056B2Production apparatus of SiC single crystal by solution growth method, method for producing SiC single crystal using the production apparatus, and crucible used in the production apparatusKAMEI KAZUHITO·Filed 2012·Granted Jul 11, 2017·0 cites·5 claims
- 2648US9732441B2Production apparatus and production method of SiC single crystalKUSUNOKI KAZUHIKO·Filed 2012·Granted Aug 15, 2017·0 cites·2 claims
- 2748US9631295B2Method for producing SiC single crystals by control of an angle formed by the meniscus and the side face of the seed crystal and production device for the methodDAIKOKU HIRONORI·Filed 2011·Granted Apr 25, 2017·0 cites·12 claims
- 2846US9822468B2Method for producing SiC single crystalTOYOTA MOTOR CO LTD·Filed 2016·Granted Nov 21, 2017·0 cites·2 claims
- 2946US9530642B2Method for producing SiC single crystalTOYOTA MOTOR CO LTD·Filed 2013·Granted Dec 27, 2016·0 cites·6 claims
- 3046US6764767B2Graphite powders suited for negative electrode material of lithium ion secondary batterySONY CORP·Filed 1999·Granted Jul 20, 2004·12 cites·5 claims
- 3144US9322112B2Apparatus and method for production of SiC single crystalISHII TOMOKAZU·Filed 2011·Granted Apr 26, 2016·0 cites·3 claims
- 3241US10145025B2Method for producing SiC single crystalTOYOTA MOTOR CO LTD·Filed 2016·Granted Dec 4, 2018·0 cites·4 claims
- 3339US2019229103A1Semiconductor deviceUNIV WASEDA·Filed 2019·Application pending·0 cites
- 3439US2017306522A1APPARATUS FOR PRODUCING SiC SINGLE CRYSTAL BY SOLUTION GROWTH PROCESS AND CRUCIBLE EMPLOYED THEREINNIPPON STEEL & SUMITOMO METAL CORP·Filed 2015·Application pending·0 cites
- 3538US2017226658A1APPARATUS FOR MANUFACTURING SiC SINGLE CRYSTAL AND METHOD OF MANUFACTURING SiC SINGLE CRYSTALNIPPON STEEL & SUMITOMO METAL CORP·Filed 2015·Application pending·0 cites
- 3638US2017283982A1METHOD FOR PRODUCING P-TYPE SiC SINGLE CRYSTALNIPPON STEEL & SUMITOMO METAL CORP·Filed 2015·Application pending·0 cites
- 3738US2017298533A1METHOD FOR PRODUCING SiC SINGLE CRYSTAL AND APPARATUS FOR PRODUCING SiC SINGLE CRYSTALNIPPON STEEL & SUMITOMO METAL CORP·Filed 2015·Application pending·0 cites
- 3838US2017067183A1METHOD OF MANUFACTURING SiC SINGLE CRYSTALNIPPON STEEL & SUMITOMO METAL CORP·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →