Inventor · disambiguated record
Kathryn M. Kelchner
Also filed as: KELCHNER KATHRYN M · KELCHNER KATHRYN MERCED
11 granted patents·2 pending applications·1,418 citations·filing 2010–2021
91Inventor score
Top patents by PatentIndex Score
13 records- 0198US9865455B1Nitride film formed by plasma-enhanced and thermal atomic layer deposition processLAM RES CORP·Filed 2016·Granted Jan 9, 2018·434 cites·20 claims
- 0298US9824884B1Method for depositing metals free ald silicon nitride films using halide-based precursorsLAM RES CORP·Filed 2016·Granted Nov 21, 2017·348 cites·16 claims
- 0398US9214333B1Methods and apparatuses for uniform reduction of the in-feature wet etch rate of a silicon nitride film formed by ALDLAM RES CORP·Filed 2014·Granted Dec 15, 2015·539 cites·21 claims
- 0495US9076646B2Plasma enhanced atomic layer deposition with pulsed plasma exposureLAM RES CORP·Filed 2013·Granted Jul 7, 2015·81 cites·19 claims
- 0592US9611987B2White light source employing a III-nitride based laser diode pumping a phosphorUNIV CALIFORNIA·Filed 2013·Granted Apr 4, 2017·15 cites·22 claims
- 0672US11239420B2Conformal damage-free encapsulation of chalcogenide materialsLAM RES CORP·Filed 2018·Granted Feb 1, 2022·1 cites·17 claims
- 0766US11832533B2Conformal damage-free encapsulation of chalcogenide materialsLAM RES CORP·Filed 2021·Granted Nov 28, 2023·0 cites·15 claims
- 0861US11552452B2Semi-polar III-nitride optoelectronic devices on m-plane substrates with miscuts less than +/− 15 degrees in the c-directionUNIV CALIFORNIA·Filed 2018·Granted Jan 10, 2023·0 cites·21 claims
- 0955US10020188B2Method for depositing ALD films using halide-based precursorsLAM RES CORP·Filed 2017·Granted Jul 10, 2018·0 cites·18 claims
- 1055US9917422B2Semi-polar III-nitride optoelectronic devices on M-plane substrates with miscuts less than +/− 15 degrees in the C-directionUNIV CALIFORNIA·Filed 2015·Granted Mar 13, 2018·0 cites·20 claims
- 1144US9077151B2Semi-polar III-nitride optoelectronic devices on M-plane substrates with miscuts less than +/-15 degrees in the C-directionHSU PO SHAN·Filed 2011·Granted Jul 7, 2015·0 cites·28 claims
- 1241US2011103418A1Superluminescent diodes by crystallographic etchingUNIV CALIFORNIA·Filed 2010·Application pending·0 cites
- 1337US2011170569A1Semipolar iii-nitride laser diodes with etched mirrorsUNIV CALIFORNIA·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →