Inventor · disambiguated record
Kazutoshi Kojima
Also filed as: KOJIMA KAZUTOSHI
9 granted patents·2 pending applications·53 citations·filing 2004–2024
83Inventor score
Files withAIST3MOMOSE KENJI2NAT INST ADVANCED IND SCIENCE & TECH2NAT INST OF ADVANCED IND SCIEN2FUJI ELECTRIC CO LTD1
Top patents by PatentIndex Score
11 records- 0191US8716718B2Epitaxial SiC single crystal substrate and method of manufacture of epitaxial SiC single crystal substrateMOMOSE KENJI·Filed 2012·Granted May 6, 2014·15 cites·13 claims
- 0280US7265388B2Semiconductor deviceNAT INST OF ADVANCED IND SCIEN·Filed 2004·Granted Sep 4, 2007·29 cites·18 claims
- 0369US10354867B2Epitaxial wafer manufacturing method, epitaxial wafer, semiconductor device manufacturing method, and semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2017·Granted Jul 16, 2019·1 cites·18 claims
- 0469US8293623B2Epitaxial SiC single crystal substrate and method of manufacture of epitaxial SiC single crystal substrateMOMOSE KENJI·Filed 2008·Granted Oct 23, 2012·3 cites·14 claims
- 0560US2024332281A1Semiconductor deviceAIST·Filed 2024·Application pending·0 cites
- 0651US7635868B2Silicon carbide epitaxial wafer, method for producing such wafer, and semiconductor device formed on such waferNAT INST OF ADVANCED IND SCIEN·Filed 2004·Granted Dec 22, 2009·5 cites·7 claims
- 0750US10879359B2Silicon carbide epitaxial wafer having a thick silicon carbide layer with small wrapage and manufacturing method thereofAIST·Filed 2019·Granted Dec 29, 2020·0 cites·17 claims
- 0849US9053834B2Silicon carbide single crystal and manufacturing method of the sameHIROSE FUSAO·Filed 2011·Granted Jun 9, 2015·0 cites·8 claims
- 0946US9496345B2Semiconductor structure, semiconductor device, and method for producing semiconductor structureNAT INST ADVANCED IND SCIENCE & TECH·Filed 2013·Granted Nov 15, 2016·0 cites·11 claims
- 1045US9587326B2Silicon carbide epitaxial wafer, method for manufacturing silicon carbide epitaxial wafer, device for manufacturing silicon carbide epitaxial wafer, and silicon carbide semiconductor elementNAT INST ADVANCED IND SCIENCE & TECH·Filed 2014·Granted Mar 7, 2017·0 cites·16 claims
- 1135US2019333998A1Silicon carbide epitaxial wafer and silicon carbide semiconductor deviceAIST·Filed 2018·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →