Inventor · disambiguated record

Kai-Hsuan Lee

Also filed as: LEE Kai-Hsuan

71 granted patents·21 pending applications·174 citations·filing 2015–2025

98Inventor score

Technology areasH10P H10W H10D H01L

Files withTAIWAN SEMICONDUCTOR MFG CO LTD92

Top patents by PatentIndex Score

92 records

0198US11189706B2FinFET structure with airgap and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 30, 2021·5 cites·20 claims
0298US10062784B1Self-aligned gate hard mask and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 28, 2018·31 cites·20 claims
0397US11855097B2Air gap formation between gate spacer and epitaxy structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·2 cites·20 claims
0497US11856743B2Flexible merge scheme for source/drain epitaxy regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·3 cites·20 claims
0597US11600520B2Air gaps in memory array structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 7, 2023·3 cites·20 claims
0697US11456383B2Semiconductor device having a contact plug with an air gap spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 27, 2022·7 cites·20 claims
0797US9997631B2Methods for reducing contact resistance in semiconductors manufacturing processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 12, 2018·31 cites·20 claims
0896US11735641B2FinFET structure with airgap and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 22, 2023·2 cites·20 claims
0996US10141231B1FinFET device with wrapped-around epitaxial structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 27, 2018·13 cites·20 claims
1095US11682675B2Fin field-effect transistor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 20, 2023·2 cites·20 claims
1195US10483266B2Flexible merge scheme for source/drain epitaxy regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 19, 2019·9 cites·20 claims
1295US10037923B1Forming transistor by selectively growing gate spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 31, 2018·9 cites·20 claims
1394US10529725B2Flexible merge scheme for source/drain epitaxy regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 7, 2020·6 cites·20 claims
1493US11901408B2Self-aligned contact air gap formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 13, 2024·2 cites·20 claims
1593US11456295B2Air gap formation between gate spacer and epitaxy structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 27, 2022·2 cites·20 claims
1693US10971408B2Contact air gap formation and structures thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 6, 2021·7 cites·20 claims
1792US10985167B2Flexible merge scheme for source/drain epitaxy regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 20, 2021·4 cites·20 claims
1892US10283624B1Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 7, 2019·7 cites·20 claims
1991US11901455B2Method of manufacturing a FinFET by implanting a dielectric with a dopantTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 13, 2024·1 cites·20 claims
2091US10923565B2Self-aligned contact air gap formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Feb 16, 2021·5 cites·20 claims
2189US11043425B2Methods of reducing parasitic capacitance in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 22, 2021·3 cites·20 claims
2289US9449882B1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 20, 2016·5 cites·20 claims
2389US2025338613A1Fin field-effect transistor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2488US12484292B2Methods of reducing parasitic capacitance in semicondutor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 25, 2025·0 cites·20 claims
2588US2025323092A1Scalable patterning through layer expansion process and resulting structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2687US12408315B2Flexible merge scheme for source/drain epitaxy regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 2, 2025·0 cites·20 claims
2787US2025311374A1Finfet structure with airgap and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2887US2025324683A1Self-aligned contact air gap formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2986US12218138B2Air gap formation between gate spacer and epitaxy structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 4, 2025·0 cites·20 claims
3086US10515896B2Interconnect structure for semiconductor device and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 24, 2019·3 cites·19 claims
3186US2025349607A1Transistor gate contactsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3285US12376351B2Self-aligned contact air gap formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 29, 2025·0 cites·20 claims
3384US12165925B2Fin field effect transistor having airgap and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 10, 2024·0 cites·20 claims
3484US2024387246A1Scalable patterning through layer expansion process and resulting structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3583US12433008B2FinFET structure with airgap and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 30, 2025·0 cites·20 claims
3683US10833170B2Low-k gate spacer and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 10, 2020·2 cites·20 claims
3783US9865595B1FinFET device with epitaxial structures that wrap around the fins and the method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 9, 2018·3 cites·20 claims
3883US2025323043A1Semiconductor device having a uniform and thin silicide layer on an epitaxial source/drain structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3983US2025324653A1METHOD OF MANUFACTURING A FinFET BY IMPLANTING A DIELECTRIC WITH A DOPANTTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4083US2024379680A1Fin field-effect transistor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4182US12432963B2Device having an air gap adjacent to a contact plug and covered by a doped dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 30, 2025·0 cites·20 claims
4282US11776855B2Fin field effect transistor having airgap and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 3, 2023·0 cites·20 claims
4381US10490650B2Low-k gate spacer and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 26, 2019·2 cites·20 claims
4481US2025366046A1Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4579US10163728B2Semiconductor device having a stacked fin structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 25, 2018·2 cites·20 claims
4679US2024113202A1Low-K Gate Spacer and Methods for Forming the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
4779US2024371689A1Transistor gate contactsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4878US2023275094A1Fin Field-Effect Transistor Device and MethodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
4977US2025169159A1FINFET Device with Wrapped-Around Epitaxial Structure and Manufacturing Method ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
5077US2025311350A1Fin field-effect transistor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites

Showing the top 50 of 92 patent records by PatentIndex Score.

Join the waitlist — get patent alerts

Get an alert when Kai-Hsuan Lee files or is granted a new patent.

We store only your email — no account needed. See our privacy policy.

Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →