Inventor · disambiguated record
Kazuo Nakazato
Also filed as: KANBE MASARU · NAKAZATO KAZUO
41 granted patents·3 pending applications·1,062 citations·filing 1977–2016
98Inventor score
Files withHITACHI LTD31FUJI HEAVY IND LTD3ELPIDA MEMORY INC1HITACHI EUROP LTD1HITACHI ULSI SYS CO LTD1
Top patents by PatentIndex Score
44 records- 0197US5952692AMemory device with improved charge storage barrier structureHITACHI LTD·Filed 1997·Granted Sep 14, 1999·255 cites·63 claims
- 0294US7023721B2Semiconductor integrated circuit deviceHITACHI LTD·Filed 2005·Granted Apr 4, 2006·30 cites·6 claims
- 0394US6574143B2Memory device using hot charge carrier convertersHITACHI EUROP LTD·Filed 2000·Granted Jun 3, 2003·97 cites·42 claims
- 0492US6211531B1Controllable conduction deviceHITACHI LTD·Filed 2000·Granted Apr 3, 2001·63 cites·25 claims
- 0590US6060723AControllable conduction deviceHITACHI LTD·Filed 1998·Granted May 9, 2000·69 cites·26 claims
- 0687US6501116B2Semiconductor memory device with MIS transistorsHITACHI LTD·Filed 2001·Granted Dec 31, 2002·42 cites·16 claims
- 0786US6876569B2Semiconductor integrated circuit device with improved storage MOSFET arrangementHITACHI LTD·Filed 2004·Granted Apr 5, 2005·30 cites·19 claims
- 0885US6753568B1Memory deviceHITACHI LTD·Filed 1999·Granted Jun 22, 2004·64 cites·50 claims
- 0976US6762951B2Semiconductor integrated circuit deviceHITACHI LTD·Filed 2002·Granted Jul 13, 2004·19 cites·16 claims
- 1075US6515892B1Semiconductor integrated circuit deviceHITACHI LTD·Filed 1999·Granted Feb 4, 2003·37 cites·18 claims
- 1175US6465834B1Semiconductor deviceHITACHI LTD·Filed 2000·Granted Oct 15, 2002·18 cites·28 claims
- 1273US8129978B2Material detectorNAKAZATO KAZUO·Filed 2007·Granted Mar 6, 2012·5 cites·36 claims
- 1373US4809828AOne-way damping valve mechanism for hydraulic damperSHOWA MFG·Filed 1987·Granted Mar 7, 1989·28 cites·8 claims
- 1471US6987043B2Method of manufacturing semiconductor device having a plurality of trench-type data storage capacitorsHITACHI ULSI SYS CO LTD·Filed 2002·Granted Jan 17, 2006·15 cites·17 claims
- 1570US6787411B2Method of manufacturing semiconductor memory device and semiconductor memory deviceRENESAS TECH CORP·Filed 2002·Granted Sep 7, 2004·15 cites·10 claims
- 1666US6169308B1Semiconductor memory device and manufacturing method thereofHITACHI LTD·Filed 1998·Granted Jan 2, 2001·24 cites·9 claims
- 1766US5677637ALogic device using single electron coulomb blockade techniquesHITACHI LTD·Filed 1996·Granted Oct 14, 1997·32 cites·49 claims
- 1864US4192683APhotographic light-sensitive materialKONISHIROKU PHOTO IND·Filed 1977·Granted Mar 11, 1980·7 cites·3 claims
- 1963US6861692B2Method of manufacturing semiconductor device and semiconductor deviceHITACHI LTD·Filed 2003·Granted Mar 1, 2005·9 cites·8 claims
- 2063US5227660ASemiconductor deviceHITACHI LTD·Filed 1991·Granted Jul 13, 1993·18 cites·14 claims
- 2161US7132713B2Controllable conduction device with electrostatic barrierHITACHI LTD·Filed 2002·Granted Nov 7, 2006·7 cites·35 claims
- 2259US4769687ALateral bipolar transistor and method of producing the sameHITACHI LTD·Filed 1987·Granted Sep 6, 1988·25 cites·16 claims
- 2357US5391912ASemiconductor device having polycrystalline silicon region forming a lead-out electrode region and extended beneath active region of transistorHITACHI LTD·Filed 1992·Granted Feb 21, 1995·15 cites·12 claims
- 2453US7244977B2Longitudinal MISFET manufacturing method, longitudinal MISFET, semiconductor storage device manufacturing method, and semiconductor storage deviceELPIDA MEMORY INC·Filed 2002·Granted Jul 17, 2007·5 cites·2 claims
- 2552US6825527B2Semiconductor memory device and manufacturing methodHITACHI LTD·Filed 2003·Granted Nov 30, 2004·4 cites·17 claims
- 2651US4887145ASemiconductor device in which electrodes are formed in a self-aligned mannerHITACHI LTD·Filed 1986·Granted Dec 12, 1989·18 cites·40 claims
- 2751US4812894ASemiconductor deviceHITACHI LTD·Filed 1988·Granted Mar 14, 1989·17 cites·16 claims
- 2850US4956688ARadiation resistant bipolar memoryHITACHI LTD·Filed 1989·Granted Sep 11, 1990·13 cites·37 claims
- 2943US6642574B2Semiconductor memory device and manufacturing method thereofHITACHI LTD·Filed 2000·Granted Nov 4, 2003·1 cites·35 claims
- 3043US2007202638A1Vertical misfet manufacturing method, vertical misfet, semiconductor memory device manufacturing method, and semiconductor memory deviceTABATA TSUYOSHI·Filed 2007·Application pending·0 cites
- 3142US4558680ASystem for controlling the air-fuel ratio supplied to a supercharged engineFUJI HEAVY IND LTD·Filed 1984·Granted Dec 17, 1985·7 cites·10 claims
- 3241US5177584ASemiconductor integrated circuit device having bipolar memory, and method of manufacturing the sameHITACHI LTD·Filed 1991·Granted Jan 5, 1993·8 cites·7 claims
- 3341US4858184ARadiation resistant bipolar memoryHITACHI LTD·Filed 1987·Granted Aug 15, 1989·7 cites·12 claims
- 3441US4819055ASemiconductor device having a PN junction formed on an insulator filmHITACHI LTD·Filed 1988·Granted Apr 4, 1989·8 cites·2 claims
- 3540US5109263ASemiconductor device with optimal distance between emitter and trench isolationHITACHI LTD·Filed 1990·Granted Apr 28, 1992·11 cites·9 claims
- 3640US2018180566A1Reference electrode holding member and substance detection deviceUNIV NAGOYA NAT UNIV CORP·Filed 2016·Application pending·0 cites
- 3739US5061645AMethod of manufacturing a bipolar transistorHITACHI LTD·Filed 1990·Granted Oct 29, 1991·9 cites·25 claims
- 3838US4860086ASemiconductor deviceHITACHI LTD·Filed 1987·Granted Aug 22, 1989·9 cites·12 claims
- 3938US4829361ASemiconductor deviceHITACHI LTD·Filed 1987·Granted May 9, 1989·9 cites·39 claims
- 4037US4958320ARadiation resistant bipolar memoryHITACHI LTD·Filed 1989·Granted Sep 18, 1990·5 cites·30 claims
- 4137US4476834AAir-fuel ratio control systemFUJI HEAVY IND LTD·Filed 1982·Granted Oct 16, 1984·3 cites·7 claims
- 4234US4541384ASystem for controlling the air-fuel ratio supplied to an engineFUJI HEAVY IND LTD·Filed 1984·Granted Sep 17, 1985·3 cites·4 claims
- 4332US2005051805A1Nanotube transistor deviceFiled 2004·Application pending·0 cites
- 4430US4825281ABipolar transistor with sidewall bare contact structureHITACHI LTD·Filed 1982·Granted Apr 25, 1989·1 cites·5 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →