Inventor · disambiguated record
Katsumi Ogi
Also filed as: OGI KATSUMI
30 granted patents·1 pending application·573 citations·filing 1983–2003
97Inventor score
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31 records- 0194US6051858AFerroelectric/high dielectric constant integrated circuit and method of fabricating sameSYMETRIX CORP·Filed 1997·Granted Apr 18, 2000·125 cites·10 claims
- 0280US4447045AApparatus for preparing high-melting-point high-toughness metalsMITSUBISHI METAL CORP·Filed 1983·Granted May 8, 1984·19 cites·8 claims
- 0375US5696384AComposition for formation of electrode patternMITSUBISHI MATERIALS CORP·Filed 1995·Granted Dec 9, 1997·46 cites·2 claims
- 0475US5453294AMethod of controlling crystal orientation of PZT and PLZT thin films on platinum substratesMITSUBISHI MATERIALS CORP·Filed 1993·Granted Sep 26, 1995·30 cites·3 claims
- 0574US5942376AShelf-stable liquid metal arylketone alcoholate solutions and use thereof in photoinitiated patterning of thin filmsSYMETRIX CORP·Filed 1997·Granted Aug 24, 1999·34 cites·16 claims
- 0672US4508322AApparatus for preparing high melting point high toughness metalsMITSUBISHI METAL CORP·Filed 1984·Granted Apr 2, 1985·15 cites·10 claims
- 0770US6310228B1Organic copper compound, liquid mixture containing the compound, and copper thin-film prepared using the solutionMITSUBISHI MATERIALS CORP·Filed 2000·Granted Oct 30, 2001·6 cites·62 claims
- 0870US5630872AFormation of thin-film patterns of a metal oxideMITSUBISHI MATERIALS CORP·Filed 1995·Granted May 20, 1997·37 cites·22 claims
- 0964US5833745ABi-based ferroelectric composition and thin film, method for forming the thin film, and non-volatile memoryMITSUBISHI MATERIALS CORP·Filed 1996·Granted Nov 10, 1998·23 cites·21 claims
- 1064US5637440AComposition for forming metal oxide thin film pattern and method for forming metal oxide thin film patternMITSUBISHI MATERIALS CORP·Filed 1994·Granted Jun 10, 1997·15 cites·16 claims
- 1161US6355097B2Organic titanium compound suitable for MOCVDMITSUBISHI MATERIALS CORP·Filed 2001·Granted Mar 12, 2002·3 cites·5 claims
- 1260US6569922B2Silica powder and method for producing the sameMITSUBISHI MATERIALS CORP·Filed 2001·Granted May 27, 2003·7 cites·10 claims
- 1360US6203608B1Ferroelectric thin films and solutions: compositionsRAMTRON INT CORP·Filed 1998·Granted Mar 20, 2001·24 cites·10 claims
- 1460US6022669AMethod of fabricating an integrated circuit using self-patterned thin filmsSYMETRIX CORP·Filed 1996·Granted Feb 8, 2000·25 cites·34 claims
- 1559US5767302AHigh-purity TI complexes, methods for producing the same and BST film-forming liquid compositionsMITSUBISHI MATERIALS CORP·Filed 1996·Granted Jun 16, 1998·24 cites·20 claims
- 1658US6521770B2Organozirconium compound, organic solution comprising same, and zirconium-containing thin film therefromMITSUBISHI MATERIALS CORP·Filed 2001·Granted Feb 18, 2003·4 cites·15 claims
- 1758US5849465APhotosensitive titanium carboxydiketonate and titanium carboxyketoester precursor solutions and method of patterning integrated circuits using the sameSYMETRIX CORP·Filed 1996·Granted Dec 15, 1998·22 cites·18 claims
- 1856US6987197B2Organozirconium composite and method of synthesizing the same, raw material solution containing the same, and method of forming lead zirconate titanate thin filmMITSUBISHI MATERIALS CORP·Filed 2003·Granted Jan 17, 2006·2 cites·34 claims
- 1956US6855751B2Silica powder and method for producing the sameMITSUBISHI MATERIALS CORP·Filed 2003·Granted Feb 15, 2005·5 cites·17 claims
- 2054US5792592APhotosensitive liquid precursor solutions and use thereof in making thin filmsSYMETRIX CORP·Filed 1996·Granted Aug 11, 1998·19 cites·28 claims
- 2154US5605723AMethod for forming a pattern of non-volatile ferroelectric thin film memoryMITSUBISHI MATERIALS CORP·Filed 1995·Granted Feb 25, 1997·20 cites·19 claims
- 2250US7045645B2Ruthenium compounds, process for their preparation, and ruthenium-containing thin films made by using the compoundsMITSUBISHI MATERIALS CORP·Filed 2003·Granted May 16, 2006·1 cites·14 claims
- 2347US5824456AComposition for forming metal oxide thin film pattern and method for forming metal oxide thin film patternMITSUBISHI MATERIALS CORP·Filed 1997·Granted Oct 20, 1998·11 cites·18 claims
- 2447US4512557AApparatus for preparing high-melting-point high-toughness metalsMITSUBISHI METAL CORP·Filed 1983·Granted Apr 23, 1985·10 cites·14 claims
- 2546US5244742AUltrahigh-purity ferroelectric thin filmMITSUBISHI MATERIALS CORP·Filed 1991·Granted Sep 14, 1993·15 cites·5 claims
- 2641US6280518B1Organic titanium compound suitable for MOCVDMITSUBISHI MATERIALS CORP·Filed 1999·Granted Aug 28, 2001·9 cites·9 claims
- 2738US5788757AComposition and process using ester solvents for fabricating metal oxide films and electronic devices including the sameSYMETRIX CORP·Filed 1996·Granted Aug 4, 1998·6 cites·27 claims
- 2837US5807495ABi-based dielectric thin films, and compositions and method for forming themMITSUBISHI MATERIALS CORP·Filed 1996·Granted Sep 15, 1998·6 cites·12 claims
- 2935US2001016229A1Ferroelectric thin films and solutions: compositions and processingFiled 2001·Application pending·0 cites
- 3034US6485554B1Solution raw material for forming composite oxide type dielectric thin film and dielectric thin filmMITSUBISHI MATERIALS CORP·Filed 1998·Granted Nov 26, 2002·5 cites·12 claims
- 3131US5786025ABa and/or Sr titanate films by organic chemical vapor depositionMITSUBISHI MATERIALS CORP·Filed 1996·Granted Jul 28, 1998·5 cites·3 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →