Inventor · disambiguated record
Katsumi Ogiue
Also filed as: IWABUCHI MASATO · OGIUE KATSUMI
36 granted patents·783 citations·filing 1977–1994
98Inventor score
Top patents by PatentIndex Score
36 records- 0192US5477067ASemiconductor IC device having a RAM interposed between different logic sections and by-pass signal lines extending over the RAM for mutually connecting the logic sectionsHITACHI LTD·Filed 1993·Granted Dec 19, 1995·130 cites·32 claims
- 0292US5014242ASemiconductor device for a ram disposed on chip so as to minimize distances of signal paths between the logic circuits and memory circuitHITACHI LTD·Filed 1988·Granted May 7, 1991·69 cites·15 claims
- 0391US4713796ASemiconductor integrated circuitHITACHI LTD·Filed 1985·Granted Dec 15, 1987·36 cites·12 claims
- 0488US4949162ASemiconductor integrated circuit with dummy pedestalsHITACHI LTD·Filed 1988·Granted Aug 14, 1990·91 cites·21 claims
- 0588US4630095APackaged semiconductor device structure including getter material for decreasing gas from a protective organic coveringVLSI TECHNOLOGY RES ASS·Filed 1984·Granted Dec 16, 1986·78 cites·11 claims
- 0680US5023835ASemiconductor memory system for use in logic LSI'sHITACHI LTD·Filed 1989·Granted Jun 11, 1991·38 cites·18 claims
- 0775US4746963AIsolation regions formed by locos followed with groove etch and refillHITACHI LTD·Filed 1986·Granted May 24, 1988·33 cites·42 claims
- 0874US5354699AMethod of manufacturing semiconductor integrated circuit deviceHITACHI LTD·Filed 1992·Granted Oct 11, 1994·33 cites·12 claims
- 0968US4799098AMOS/bipolar device with stepped buried layer under active regionsHITACHI LTD·Filed 1987·Granted Jan 17, 1989·25 cites·14 claims
- 1065US4599635ASemiconductor integrated circuit device and method of producing sameHITACHI LTD·Filed 1977·Granted Jul 8, 1986·14 cites·15 claims
- 1161US5243208ASemiconductor integrated circuit device having a gate array with a ram and by-pass signal lines which interconnect a logic section and I/O unit circuit of the gate arrayHITACHI LTD·Filed 1992·Granted Sep 7, 1993·27 cites·6 claims
- 1261US4959704ASemiconductor integrated circuit deviceHITACHI LTD·Filed 1988·Granted Sep 25, 1990·23 cites·32 claims
- 1359US5512497AMethod of manufacturing a semiconductor integrated circuit deviceHITACHI LTD·Filed 1994·Granted Apr 30, 1996·17 cites·26 claims
- 1459US4907063ASemiconductor body, and device formed therefrom, having grooves with silicon nitride on the groove surfacesHITACHI LTD·Filed 1987·Granted Mar 6, 1990·21 cites·38 claims
- 1555US5220187ASemiconductor integrated circuit with bipolar transistors and mosfetsHITACHI LTD·Filed 1992·Granted Jun 15, 1993·12 cites·46 claims
- 1655US5057894ASemiconductor integrated circuit deviceHITACHI LTD·Filed 1990·Granted Oct 15, 1991·18 cites·14 claims
- 1747US4858189ASemiconductor integrated circuitHITACHI LTD·Filed 1987·Granted Aug 15, 1989·4 cites·44 claims
- 1845US5103282ASemiconductor integrated circuit device having a gate array with a ram and by-pass signal lines which interconnect a logic section and i/o unit circuit of the gate arrayHITACHI LTD·Filed 1990·Granted Apr 7, 1992·13 cites·23 claims
- 1944US5367490ASemiconductor integrated circuit device with two variable delay lines in writing circuit controlHITACHI LTD·Filed 1992·Granted Nov 22, 1994·9 cites·16 claims
- 2044US5214302ASemiconductor integrated circuit device forming on a common substrate MISFETs isolated by a field oxide and bipolar transistors isolated by a grooveHITACHI LTD·Filed 1991·Granted May 25, 1993·10 cites·24 claims
- 2144US4977338AHigh speed bipolar-MOS logic circuit including a series coupled arrangement of a bipolar transistor and a logic block having a MOSFETHITACHI LTD·Filed 1989·Granted Dec 11, 1990·6 cites·39 claims
- 2243US4924439ASemiconductor integrated circuitHITACHI LTD·Filed 1989·Granted May 8, 1990·3 cites·10 claims
- 2343US4853343AMethod for fabricating a semiconductor integrated circuit device having thick oxide films and groove etch and refillHITACHI LTD·Filed 1988·Granted Aug 1, 1989·8 cites·20 claims
- 2442US4809052ASemiconductor memory deviceHITACHI LTD·Filed 1986·Granted Feb 28, 1989·7 cites·17 claims
- 2542US4700464AMethod of forming trench isolation in an integrated circuitHITACHI LTD·Filed 1984·Granted Oct 20, 1987·8 cites·20 claims
- 2641US5200348AMethod of manufacturing semiconductor device with constant width deep groove isolationHITACHI LTD·Filed 1991·Granted Apr 6, 1993·8 cites·16 claims
- 2741US5177584ASemiconductor integrated circuit device having bipolar memory, and method of manufacturing the sameHITACHI LTD·Filed 1991·Granted Jan 5, 1993·8 cites·7 claims
- 2840US5042010ASemiconductor integrated circuitHITACHI LTD·Filed 1990·Granted Aug 20, 1991·3 cites·18 claims
- 2940US4260430AMethod of manufacturing a semiconductor deviceHITACHI LTD·Filed 1979·Granted Apr 7, 1981·4 cites·5 claims
- 3038US5084402AMethod of fabricating a semiconductor substrate, and semiconductor device, having thick oxide films and groove isolationHITACHI IND·Filed 1989·Granted Jan 28, 1992·8 cites·29 claims
- 3138US4219369AMethod of making semiconductor integrated circuit deviceHITACHI LTD·Filed 1978·Granted Aug 26, 1980·6 cites·12 claims
- 3236US5117390ASemiconductor memory system for use in logic lsi'sHITACHI LTD·Filed 1991·Granted May 26, 1992·6 cites·4 claims
- 3333US5371713ASemiconductor integrated circuitHITACHI LTD·Filed 1994·Granted Dec 6, 1994·1 cites·12 claims
- 3431US5128740ASemiconductor integrated circuit device with isolation grooves and protruding portionsHITACHI LTD·Filed 1989·Granted Jul 7, 1992·2 cites·26 claims
- 3531US4656606ASemiconductor memory device providing a selection circuit change-over arrangementHITACHI LTD·Filed 1984·Granted Apr 7, 1987·4 cites·6 claims
- 3630US5311482ASemiconductor integrated circuitHITACHI LTD·Filed 1993·Granted May 10, 1994·0 cites·30 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →