Inventor · disambiguated record
Kavita Shah
Also filed as: SHAH KAVITA · SHAH KAVITA M
23 granted patents·10 pending applications·348 citations·filing 2003–2024
96Inventor score
Files withAPPLIED MATERIALS INC10PEOPLE AI INC6NOVA MEASURING INSTR INC4SUNRISE MEMORY CORP3IRM LLC2
Top patents by PatentIndex Score
33 records- 0196US7691442B2Ruthenium or cobalt as an underlayer for tungsten film depositionAPPLIED MATERIALS INC·Filed 2008·Granted Apr 6, 2010·39 cites·25 claims
- 0296US7682946B2Apparatus and process for plasma-enhanced atomic layer depositionAPPLIED MATERIALS INC·Filed 2006·Granted Mar 23, 2010·40 cites·33 claims
- 0396US7429402B2Ruthenium as an underlayer for tungsten film depositionAPPLIED MATERIALS INC·Filed 2004·Granted Sep 30, 2008·101 cites·28 claims
- 0495US7850779B2Apparatus and process for plasma-enhanced atomic layer depositionAPPLIED MATERISALS INC·Filed 2006·Granted Dec 14, 2010·69 cites·6 claims
- 0593US7585762B2Vapor deposition processes for tantalum carbide nitride materialsAPPLIED MATERIALS INC·Filed 2007·Granted Sep 8, 2009·24 cites·23 claims
- 0691US10504050B1Systems and methods for managing electronic activity driven targetsPEOPLE AI INC·Filed 2019·Granted Dec 10, 2019·3 cites·15 claims
- 0789US10860633B2Systems and methods for inferring a time zone of a node profile using electronic activitiesPEOPLE AI INC·Filed 2019·Granted Dec 8, 2020·2 cites·20 claims
- 0889US9032906B2Apparatus and process for plasma-enhanced atomic layer depositionMA PAUL·Filed 2007·Granted May 19, 2015·13 cites·20 claims
- 0987US7833358B2Method of recovering valuable material from exhaust gas stream of a reaction chamberAPPLIED MATERIALS INC·Filed 2006·Granted Nov 16, 2010·17 cites·11 claims
- 1084US11277484B2Systems and methods for restricting generation and delivery of insights to second data source providersPEOPLE AI INC·Filed 2020·Granted Mar 15, 2022·1 cites·25 claims
- 1183US12158437B2XPS metrology for process control in selective depositionNOVA MEASURING INSTR INC·Filed 2023·Granted Dec 3, 2024·0 cites·12 claims
- 1283US11895205B2Systems and methods for restricting generation and delivery of insights to second data source providersPEOPLE AI INC·Filed 2022·Granted Feb 6, 2024·0 cites·18 claims
- 1383US7910165B2Ruthenium layer formation for copper film depositionAPPLIED MATERIALS INC·Filed 2004·Granted Mar 22, 2011·35 cites·55 claims
- 1478US11680915B2XPS metrology for process control in selective depositionNOVA MEASURING INSTR INC·Filed 2022·Granted Jun 20, 2023·0 cites·19 claims
- 1575US10545980B2Systems and methods for restricting generation and delivery of insights to second data source providersPEOPLE AI INC·Filed 2019·Granted Jan 28, 2020·0 cites·20 claims
- 1673US10657130B2Systems and methods for generating a performance profile of a node profile including field-value pairs using electronic activitiesPEOPLE AI INC·Filed 2019·Granted May 19, 2020·0 cites·18 claims
- 1771US11346795B2XPS metrology for process control in selective depositionNOVA MEASURING INSTR INC·Filed 2020·Granted May 31, 2022·0 cites·20 claims
- 1870US8586479B2Methods for forming a contact metal layer in semiconductor devicesFU XINYU·Filed 2012·Granted Nov 19, 2013·2 cites·21 claims
- 1966US2023262987A1Memory structure of three-dimensional nor memory strings of junctionless ferroelectric memory transistors incorporating air gap isolation structuresSUNRISE MEMORY CORP·Filed 2022·Application pending·0 cites
- 2064US10801978B2XPS metrology for process control in selective depositionNOVA MEASURING INSTR INC·Filed 2019·Granted Oct 13, 2020·0 cites·22 claims
- 2164US7989339B2Vapor deposition processes for tantalum carbide nitride materialsAPPLIED MATERIALS INC·Filed 2010·Granted Aug 2, 2011·1 cites·19 claims
- 2262US2025024685A1Memory structure of three-dimensional nor memory strings of channel-all-around ferroelectric memory transistors and method of fabricationSUNRISE MEMORY CORP·Filed 2024·Application pending·0 cites
- 2361US8927423B2Methods for annealing a contact metal layer to form a metal silicidation layerAPPLIED MATERIALS INC·Filed 2012·Granted Jan 6, 2015·1 cites·18 claims
- 2461US2024260275A1Fabrication method for a three-dimensional memory array of thin-film ferroelectric transistors using high-aspect-ratio local word line damascene processSUNRISE MEMORY CORP·Filed 2024·Application pending·0 cites
- 2555US7678298B2Tantalum carbide nitride materials by vapor deposition processesAPPLIED MATERIALS INC·Filed 2007·Granted Mar 16, 2010·0 cites·10 claims
- 2652US7252944B2Methods and compositions for modulating cell proliferationIRM LLC·Filed 2004·Granted Aug 7, 2007·0 cites·9 claims
- 2749US2006246699A1Process for electroless copper deposition on a ruthenium seedWEIDMAN TIMOTHY W·Filed 2006·Application pending·0 cites
- 2849US2004241706A1Highly specific modulators of GTPases for target validationIRM LLC·Filed 2003·Application pending·0 cites
- 2949US2012315756A1Process for electroless copper deposition on a ruthenium seedWEIDMAN TIMOTHY W·Filed 2012·Application pending·0 cites
- 3044US2007054487A1Atomic layer deposition processes for ruthenium materialsAPPLIED MATERIALS INC·Filed 2006·Application pending·0 cites
- 3143US2013253037A1Aurora a kinase effectorsSHAH KAVITA·Filed 2011·Application pending·0 cites
- 3242US2007088810A1Apparatus, system, and method for mapping a storage environmentLAMB MICHAEL L·Filed 2005·Application pending·0 cites
- 3341US2007077750A1Atomic layer deposition processes for ruthenium materialsMA PAUL·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →