Inventor · disambiguated record
Kartik Sondhi
Also filed as: SONDHI KARTIK
9 granted patents·15 pending applications·0 citations·filing 2021–2024
73Inventor score
Top patents by PatentIndex Score
24 records- 0173US2025380417A1Three-dimensional memory device with laterally integrated access transistors and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2024·Application pending·0 cites
- 0266US12512366B2Method of making high aspect ratio openings in a semiconductor device using ion implanted regrown cladding maskWESTERN DIGITAL TECH INC·Filed 2024·Granted Dec 30, 2025·0 cites·20 claims
- 0366US2025040139A1Memory device including a germanium-containing source structure and methods for forming the sameSANDISK TECHNOLOGIES LLC·Filed 2024·Application pending·0 cites
- 0464US12484222B2Three-dimensional memory device and method of making thereof by non-conformal selective deposition of insulating spacers in a memory openingSANDISK TECHNOLOGIES LLC·Filed 2023·Granted Nov 25, 2025·0 cites·20 claims
- 0563US12289889B2Three-dimensional memory device containing templated crystalline ferroelectric memory elements and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Apr 29, 2025·0 cites·20 claims
- 0662US2024244844A1Three-dimensional memory device and method of making thereof including non-conformal selective deposition of spacers in memory openingsSANDISK TECHNOLOGIES LLC·Filed 2024·Application pending·0 cites
- 0760US12363905B2Memory device containing composition-controlled ferroelectric memory elements and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Jul 15, 2025·0 cites·10 claims
- 0860US2024130137A1Three-dimensional memory device containing self-aligned ferroelectric memory elements and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2023·Application pending·0 cites
- 0959US12356627B2Memory device containing composition-controlled ferroelectric memory elements and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Jul 8, 2025·0 cites·22 claims
- 1059US2024237350A1Three-dimensional memory device and method of making thereof including non-conformal selective deposition of spacers in memory openingsSANDISK TECHNOLOGIES LLC·Filed 2023·Application pending·0 cites
- 1159US2024121960A1Three-dimensional memory device containing discrete charge storage elements and methods for forming the sameSANDISK TECHNOLOGIES LLC·Filed 2023·Application pending·0 cites
- 1259US2024237354A1Three-dimensional memory device with self-aligned word line contact via structures and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2024·Application pending·0 cites
- 1359US2025254872A1Memory device including a germanium-containing source structure and methods for forming the sameSANDISK TECHNOLOGIES LLC·Filed 2024·Application pending·0 cites
- 1458US12453088B2Three-dimensional memory device including discrete charge storage elements and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Oct 21, 2025·0 cites·17 claims
- 1558US2025008729A1Three-dimensional memory device including backside semiconductor source structure and methods for forming the sameWESTERN DIGITAL TECH INC·Filed 2023·Application pending·0 cites
- 1657US12219776B2Ferroelectric devices including a single crystalline ferroelectric layer and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Feb 4, 2025·0 cites·17 claims
- 1757US2025234553A1Method of selective bottom widening of high aspect ratio openings through a multi-layer stackSANDISK TECHNOLOGIES LLC·Filed 2024·Application pending·0 cites
- 1857US2023352401A1Semiconductor device including metal interconnect structures that contain selectively-grown dielectric spacers and methods for forming the sameWESTERN DIGITAL TECH INC·Filed 2023·Application pending·0 cites
- 1956US2025008736A1Three-dimensional memory device including backside semiconductor source structure and methods for forming the sameWESTERN DIGITAL TECH INC·Filed 2023·Application pending·0 cites
- 2055US2023343641A1Method of making a three-dimensional memory device using composite hard masks for formation of deep via openingsWESTERN DIGITAL TECH INC·Filed 2023·Application pending·0 cites
- 2154US11973123B2Ferroelectric devices including a single crystalline ferroelectric layer and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Apr 30, 2024·0 cites·19 claims
- 2253US2024064995A1Memory device containing ferroelectric-spacer-ferroelectric memory elements and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2023·Application pending·0 cites
- 2352US2023420370A1Three-dimensional memory device including capped molybdenum word lines and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2022·Application pending·0 cites
- 2450US12267998B2Three-dimensional memory device including discrete charge storage elements and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Apr 1, 2025·0 cites·1 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →