Inventor · disambiguated record
Kandabara Tapily
Also filed as: TAPILY KANDABARA · TAPILY KANDABARA N
90 granted patents·30 pending applications·416 citations·filing 2015–2025
99Inventor score
Top patents by PatentIndex Score
120 records- 0199US10522343B2Method of enhancing high-k film nucleation rate and electrical mobility in a semiconductor device by microwave plasma treatmentTOKYO ELECTRON LTD·Filed 2015·Granted Dec 31, 2019·40 cites·20 claims
- 0298US10847363B2Method of selective deposition for forming fully self-aligned viasTOKYO ELECTRON LTD·Filed 2018·Granted Nov 24, 2020·39 cites·20 claims
- 0398US10586765B2Buried power railsTOKYO ELECTRON LTD·Filed 2018·Granted Mar 10, 2020·62 cites·20 claims
- 0497US11456212B2Platform and method of operating for integrated end-to-end fully self-aligned interconnect processTOKYO ELECTRON LTD·Filed 2020·Granted Sep 27, 2022·4 cites·7 claims
- 0597US11264274B2Reverse contact and silicide process for three-dimensional logic devicesTOKYO ELECTRON LTD·Filed 2020·Granted Mar 1, 2022·5 cites·20 claims
- 0697US10833078B2Semiconductor apparatus having stacked gates and method of manufacture thereofTOKYO ELECTRON LTD·Filed 2018·Granted Nov 10, 2020·34 cites·20 claims
- 0797US9997598B2Three-dimensional semiconductor device and method of fabricationTOKYO ELECTRON LTD·Filed 2017·Granted Jun 12, 2018·26 cites·20 claims
- 0896US10916472B2Self-aware and correcting heterogenous platform incorporating integrated semiconductor processing modules and method for using sameTOKYO ELECTRON LTD·Filed 2019·Granted Feb 9, 2021·14 cites·17 claims
- 0996US10770479B2Three-dimensional device and method of forming the sameTOKYO ELECTRON LTD·Filed 2019·Granted Sep 8, 2020·20 cites·20 claims
- 1096US10529830B2Extension region for a semiconductor deviceTOKYO ELECTRON LTD·Filed 2017·Granted Jan 7, 2020·16 cites·14 claims
- 1196US10049913B2Methods for SiO2 filling of fine recessed features and selective SiO2 deposition on catalytic surfacesTOKYO ELECTRON LTD·Filed 2017·Granted Aug 14, 2018·7 cites·20 claims
- 1295US11101173B2Self-aware and correcting heterogenous platform incorporating integrated semiconductor processing modules and method for using sameTOKYO ELECTRON LTD·Filed 2019·Granted Aug 24, 2021·11 cites·27 claims
- 1394US10378105B2Selective deposition with surface treatmentTOKYO ELECTRON LTD·Filed 2017·Granted Aug 13, 2019·12 cites·5 claims
- 1494US9893161B2Parasitic capacitance reduction structure for nanowire transistors and method of manufacturingTOKYO ELECTRON LTD·Filed 2016·Granted Feb 13, 2018·11 cites·20 claims
- 1593US10727057B2Platform and method of operating for integrated end-to-end self-aligned multi-patterning processTOKYO ELECTRON LTD·Filed 2019·Granted Jul 28, 2020·10 cites·20 claims
- 1692US11114381B2Power distribution network for 3D logic and memoryTOKYO ELECTRON LTD·Filed 2019·Granted Sep 7, 2021·7 cites·20 claims
- 1792US10930764B2Extension region for a semiconductor deviceTOKYO ELECTRON LTD·Filed 2019·Granted Feb 23, 2021·6 cites·20 claims
- 1892US10068764B2Selective metal oxide deposition using a self-assembled monolayer surface pretreatmentTOKYO ELECTRON LTD·Filed 2017·Granted Sep 4, 2018·7 cites·20 claims
- 1991US10283369B2Atomic layer etching using a boron-containing gas and hydrogen fluoride gasTOKYO ELECTRON LTD·Filed 2017·Granted May 7, 2019·5 cites·12 claims
- 2090US9882026B2Method for forming a nanowire structureTOKYO ELECTRON LTD·Filed 2016·Granted Jan 30, 2018·7 cites·20 claims
- 2189US12336274B2Self-aligned method for vertical recess for 3D device integrationTOKYO ELECTRON LTD·Filed 2022·Granted Jun 17, 2025·1 cites·20 claims
- 2289US11264289B2Method for threshold voltage tuning through selective deposition of high-K metal gate (HKMG) film stacksTOKYO ELECTRON LTD·Filed 2020·Granted Mar 1, 2022·2 cites·19 claims
- 2389US10453749B2Method of forming a self-aligned contact using selective SiO2 depositionTOKYO ELECTRON LTD·Filed 2018·Granted Oct 22, 2019·9 cites·19 claims
- 2489US9984890B2Isotropic silicon and silicon-germanium etching with tunable selectivityTOKYO ELECTRON LTD·Filed 2017·Granted May 29, 2018·6 cites·20 claims
- 2588US11024535B2Method for filling recessed features in semiconductor devices with a low-resistivity metalTOKYO ELECTRON LTD·Filed 2019·Granted Jun 1, 2021·4 cites·19 claims
- 2688US10453681B2Method of selective vertical growth of a dielectric material on a dielectric substrateTOKYO ELECTRON LTD·Filed 2018·Granted Oct 22, 2019·5 cites·20 claims
- 2787US11616053B2Method to vertically route a logic cell incorporating stacked transistors in a three dimensional logic deviceTOKYO ELECTRON LTD·Filed 2019·Granted Mar 28, 2023·4 cites·20 claims
- 2887US10847424B2Method for forming a nanowire deviceTOKYO ELECTRON LTD·Filed 2019·Granted Nov 24, 2020·4 cites·20 claims
- 2984US11444082B2Semiconductor apparatus having stacked gates and method of manufacture thereofTOKYO ELECTRON LTD·Filed 2020·Granted Sep 13, 2022·1 cites·20 claims
- 3084US10014213B2Selective bottom-up metal feature filling for interconnectsTOKYO ELECTRON LTD·Filed 2016·Granted Jul 3, 2018·4 cites·16 claims
- 3183US11031287B2Fully self-aligned via with selective bilayer dielectric regrowthTOKYO ELECTRON LTD·Filed 2019·Granted Jun 8, 2021·3 cites·11 claims
- 3283US10886173B2Platform and method of operating for integrated end-to-end fully self-aligned interconnect processTOKYO ELECTRON LTD·Filed 2019·Granted Jan 5, 2021·2 cites·16 claims
- 3383US10580644B2Method and apparatus for selective film deposition using a cyclic treatmentTOKYO ELECTRON LTD·Filed 2017·Granted Mar 3, 2020·1 cites·20 claims
- 3480US11443953B2Method for forming and using stress-tuned silicon oxide films in semiconductor device patterningTOKYO ELECTRON LTD·Filed 2019·Granted Sep 13, 2022·2 cites·20 claims
- 3580US11443949B2Method of selectively forming metal silicides for semiconductor devicesTOKYO ELECTRON LTD·Filed 2020·Granted Sep 13, 2022·1 cites·14 claims
- 3680US11152207B2Method of forming titanium nitride films with (200) crystallographic textureTOKYO ELECTRON LTD·Filed 2019·Granted Oct 19, 2021·2 cites·18 claims
- 3780US10410858B2Selective film deposition using halogen deactivationTOKYO ELECTRON LTD·Filed 2018·Granted Sep 10, 2019·2 cites·20 claims
- 3879US11322401B2Reverse contact and silicide process for three-dimensional semiconductor devicesTOKYO ELECTRON LTD·Filed 2020·Granted May 3, 2022·1 cites·20 claims
- 3978US10217670B2Wrap-around contact integration schemeTOKYO ELECTRON LTD·Filed 2017·Granted Feb 26, 2019·2 cites·20 claims
- 4078US9837304B2Sidewall protection scheme for contact formationTOKYO ELECTRON LTD·Filed 2016·Granted Dec 5, 2017·2 cites·20 claims
- 4177US10734278B2Method of protecting low-K layersTOKYO ELECTRON LTD·Filed 2019·Granted Aug 4, 2020·3 cites·20 claims
- 4276US10790156B2Atomic layer etching using a boron-containing gas and hydrogen fluoride gasTOKYO ELECTRON LTD·Filed 2019·Granted Sep 29, 2020·1 cites·16 claims
- 4375US11251077B2Method of forming a semiconductor device with air gaps for low capacitance interconnectsTOKYO ELECTRON LTD·Filed 2019·Granted Feb 15, 2022·1 cites·10 claims
- 4475US11217583B2Architecture design of monolithically integrated 3D CMOS logic and memoryTOKYO ELECTRON LTD·Filed 2019·Granted Jan 4, 2022·1 cites·13 claims
- 4574US11594451B2Platform and method of operating for integrated end-to-end fully self-aligned interconnect processTOKYO ELECTRON LTD·Filed 2021·Granted Feb 28, 2023·0 cites·20 claims
- 4674US11170992B2Area selective deposition for cap layer formation in advanced contactsTOKYO ELECTRON LTD·Filed 2019·Granted Nov 9, 2021·1 cites·19 claims
- 4773US10790149B2Method of forming crystallographically stabilized ferroelectric hafnium zirconium based films for semiconductor devicesTOKYO ELECTRON LTD·Filed 2019·Granted Sep 29, 2020·1 cites·20 claims
- 4873US10529584B2In-situ selective deposition and etching for advanced patterning applicationsTOKYO ELECTRON LTD·Filed 2018·Granted Jan 7, 2020·1 cites·20 claims
- 4972US10991881B2Method for controlling the forming voltage in resistive random access memory devicesTOKYO ELECTRON LTD·Filed 2019·Granted Apr 27, 2021·2 cites·17 claims
- 5072US10115601B2Selective film formation for raised and recessed features using deposition and etching processesTOKYO ELECTRON LTD·Filed 2017·Granted Oct 30, 2018·1 cites·20 claims
Showing the top 50 of 120 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Kandabara Tapily files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →