Inventor · disambiguated record
Katsuhisa Yuda
Also filed as: YUDA KATSUHISA
21 granted patents·7 pending applications·653 citations·filing 1998–2010
96Inventor score
Top patents by PatentIndex Score
28 records- 0197US6851384B2Remote plasma apparatus for processing substrate with two types of gasesNEC CORP·Filed 2001·Granted Feb 8, 2005·73 cites·27 claims
- 0297US6663715B1Plasma CVD apparatus for large area CVD filmNEC CORP·Filed 2000·Granted Dec 16, 2003·255 cites·10 claims
- 0396US7709063B2Remote plasma apparatus for processing substrate with two types of gasesNEC CORP·Filed 2007·Granted May 4, 2010·24 cites·5 claims
- 0492US5998838AThin film transistorNEC CORP·Filed 1998·Granted Dec 7, 1999·77 cites·12 claims
- 0588US6703267B2Method of manufacturing thin film transistorNEC CORP·Filed 2002·Granted Mar 9, 2004·33 cites·1 claims
- 0684US6830786B2Silicon oxide film, method of forming the silicon oxide film, and apparatus for depositing the silicon oxide filmNEC CORP·Filed 2002·Granted Dec 14, 2004·19 cites·26 claims
- 0783US6822263B2Thin film transistor formed on a transparent substrateNEC CORP·Filed 2003·Granted Nov 23, 2004·24 cites·5 claims
- 0882US6383299B1Silicon oxide film, method of forming the silicon oxide film, and apparatus for depositing the silicon oxide filmNEC CORP·Filed 1998·Granted May 7, 2002·41 cites·10 claims
- 0980US6258638B1Method of manufacturing thin film transistorNEC CORP·Filed 1999·Granted Jul 10, 2001·32 cites·8 claims
- 1077US6444508B1Method of manufacturing thin film transistorNEC CORP·Filed 2001·Granted Sep 3, 2002·16 cites·4 claims
- 1176US6444327B1Silicon oxide film, method of forming the silicon oxide film, and apparatus for depositing the silicon oxide filmNEC CORP·Filed 2000·Granted Sep 3, 2002·11 cites·11 claims
- 1275US7981216B2Vacuum processing apparatusCANON ANELVA CORP·Filed 2005·Granted Jul 19, 2011·2 cites·2 claims
- 1374US7392759B2Remote plasma apparatus for processing substrate with two types of gasesNEC CORP·Filed 2004·Granted Jul 1, 2008·9 cites·17 claims
- 1474US6779483B2Plasma CVD apparatus for large area CVD filmNEC CORP·Filed 2003·Granted Aug 24, 2004·9 cites·12 claims
- 1561US6537911B2Chemical vapor deposition methodANELVA CORP·Filed 2002·Granted Mar 25, 2003·6 cites·2 claims
- 1660US6436487B1Method for depositing a silicon oxide filmANELVA CORP·Filed 2000·Granted Aug 20, 2002·6 cites·11 claims
- 1757US7067436B2Method of forming silicon oxide film and forming apparatus thereofANELVA CORP·Filed 2004·Granted Jun 27, 2006·2 cites·5 claims
- 1853US2010170442A1Remote plasma apparatus for processing substrate with two types of gasesYUDA KATSUHISA·Filed 2010·Application pending·0 cites
- 1952US7585708B2Method for manufacturing a thin-film transistorNEC CORP·Filed 2006·Granted Sep 8, 2009·0 cites·6 claims
- 2050US7119363B2Thin film transistor formed on a transparent substrateNEC CORP·Filed 2004·Granted Oct 10, 2006·2 cites·7 claims
- 2150US2008305275A1CVD system and substrate cleaning methodCANON ANELVA CORP·Filed 2008·Application pending·0 cites
- 2248US2008044589A1CVD system and substrate cleaning methodANELVA CORP·Filed 2007·Application pending·0 cites
- 2344US2002006478A1Method of forming silicon oxide film and forming apparatus thereofFiled 2001·Application pending·0 cites
- 2440US2002090455A1Method and apparatus for depositing a silicon oxide filmANELVA CORP·Filed 2002·Application pending·0 cites
- 2539US6281053B1Thin film transistor with reduced hydrogen passivation process timeNEC CORP·Filed 1999·Granted Aug 28, 2001·6 cites·20 claims
- 2639US6118139AThin film transistor with reduced hydrogen passivation process timeNEC CORP·Filed 1998·Granted Sep 12, 2000·6 cites·5 claims
- 2738US2009202721A1Method for Thin Film FormationNOGAMI HIROSHI·Filed 2006·Application pending·0 cites
- 2836US2001003014A1Plasma CVD apparatus and plasma CVD methodNEC CORP·Filed 2000·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →