Inventor · disambiguated record
Kenji Fujito
Also filed as: FUJITO KENJI
20 granted patents·2 pending applications·32 citations·filing 2005–2023
92Inventor score
Top patents by PatentIndex Score
22 records- 0191US11038024B2Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor deviceMITSUBISHI CHEM CORP·Filed 2019·Granted Jun 15, 2021·4 cites·19 claims
- 0291US10475887B2Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor deviceMITSUBISHI CHEM CORP·Filed 2016·Granted Nov 12, 2019·5 cites·15 claims
- 0389US11031475B2Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor deviceMITSUBISHI CHEM CORP·Filed 2019·Granted Jun 8, 2021·3 cites·18 claims
- 0489US10655244B2GaN substrate, method for producing GaN substrate, method for producing GaN crystal, and method for manufacturing semiconductor deviceMITSUBISHI CHEM CORP·Filed 2018·Granted May 19, 2020·2 cites·19 claims
- 0589US10066319B2GaN substrate, method for producing GaN substrate, method for producing GaN crystal, and method for manufacturing semiconductor deviceMITSUBISHI CHEM CORP·Filed 2016·Granted Sep 4, 2018·6 cites·13 claims
- 0687US11664428B2Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor deviceMITSUBISHI CHEM CORP·Filed 2021·Granted May 30, 2023·1 cites·13 claims
- 0783US12107129B2Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor deviceMITSUBISHI CHEM CORP·Filed 2023·Granted Oct 1, 2024·0 cites·21 claims
- 0882US8269251B2Method for producing group III nitride semiconductor crystal, group III nitride semiconductor substrate, and semiconductor light-emitting deviceFUJITO KENJI·Filed 2008·Granted Sep 18, 2012·7 cites·13 claims
- 0972US9551088B2Method for growing group III-nitride crystals in supercritical ammonia using an autoclaveUNIV CALIFORNIA·Filed 2014·Granted Jan 24, 2017·0 cites·16 claims
- 1070US8728622B2Single-crystal substrate, group-III nitride crystal obtained using the same, and process for producing group-III nitride crystalFUJITO KENJI·Filed 2012·Granted May 20, 2014·2 cites·19 claims
- 1166US9112096B2Method for producing group-III nitride semiconductor crystal, group-III nitride semiconductor substrate, and semiconductor light emitting deviceMITSUBISHI CHEM CORP·Filed 2013·Granted Aug 18, 2015·1 cites·19 claims
- 1261US7928446B2Group III nitride semiconductor substrate and method for cleaning the sameMITSUBISHI CHEM CORP·Filed 2008·Granted Apr 19, 2011·1 cites·15 claims
- 1360US10570530B2Periodic table group 13 metal nitride crystals and method for manufacturing periodic table group 13 metal nitride crystalsMITSUBISHI CHEM CORP·Filed 2018·Granted Feb 25, 2020·0 cites·18 claims
- 1459US10023976B2Periodic table group 13 metal nitride crystals and method for manufacturing periodic table group 13 metal nitride crystalsMITSUBISHI CHEM CORP·Filed 2017·Granted Jul 17, 2018·0 cites·20 claims
- 1558US9840791B2Periodic table group 13 metal nitride crystals and method for manufacturing periodic table group 13 metal nitride crystalsMITSUBISHI CHEM CORP·Filed 2014·Granted Dec 12, 2017·0 cites·17 claims
- 1656US9428386B2Process for producing a group-III nitride crystal and process for producing a light-emitting semiconductor element or a semiconductor device comprising a group-III nitride crystalMITSUBISHI CHEM CORP·Filed 2014·Granted Aug 30, 2016·0 cites·18 claims
- 1755US8709371B2Method for growing group III-nitride crystals in supercritical ammonia using an autoclaveFUJITO KENJI·Filed 2005·Granted Apr 29, 2014·0 cites·15 claims
- 1849US8022413B2Group III nitride semiconductor substrate and method for cleaning the sameMITSUBISHI CHEM CORP·Filed 2011·Granted Sep 20, 2011·0 cites·8 claims
- 1949US2012305983A1Method for producing group-iii nitride semiconductor crystal, group-iii nitride semiconductor substrate, and semiconductor light emitting deviceFUJITO KENJI·Filed 2012·Application pending·0 cites
- 2047US9502241B2Group III nitride crystal production method and group III nitride crystalMITSUBISHI CHEM CORP·Filed 2013·Granted Nov 22, 2016·0 cites·6 claims
- 2141US8545626B2Nitride semiconductor crystal and its production methodFUJITO KENJI·Filed 2009·Granted Oct 1, 2013·0 cites·19 claims
- 2238US2012112320A1Nitride semiconductor crystal and production process thereofKUBO SHUICHI·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →