Inventor · disambiguated record
Kenji Funatsu
Also filed as: FUNATSU KENJI
21 granted patents·25 pending applications·57 citations·filing 2000–2025
92Inventor score
Top patents by PatentIndex Score
46 records- 0190US9250523B2Resist composition and patterning processSHINETSU CHEMICAL CO·Filed 2013·Granted Feb 2, 2016·7 cites·9 claims
- 0289US10816900B2Tetracarboxylic acid diester compound, polymer of polyimide precursor and method for producing same, negative photosensitive resin composition, patterning process, and method for forming cured filmSHINETSU CHEMICAL CO·Filed 2018·Granted Oct 27, 2020·3 cites·8 claims
- 0389US9122152B2Patterning process and resist compositionSHINETSU CHEMICAL CO·Filed 2013·Granted Sep 1, 2015·6 cites·13 claims
- 0487US7718342B2Polymers, resist compositions and patterning processSHINETSU CHEMICAL CO·Filed 2006·Granted May 18, 2010·9 cites·15 claims
- 0582US9618850B2Pattern forming process and shrink agentSHINETSU CHEMICAL CO·Filed 2015·Granted Apr 11, 2017·3 cites·9 claims
- 0676US9091933B2Negative pattern forming processSHINETSU CHEMICAL CO·Filed 2012·Granted Jul 28, 2015·2 cites·15 claims
- 0775US2025355356A1Chemically amplified positive resist composition and resist pattern forming processSHINETSU CHEMICAL CO·Filed 2025·Application pending·0 cites
- 0873US7157207B2Polymer, resist material and patterning processingSHINETSU CHEMICAL CO·Filed 2004·Granted Jan 2, 2007·12 cites·7 claims
- 0970US2025270357A1Polymer, chemically amplified negative resist composition, and resist pattern forming processSHINETSU CHEMICAL CO·Filed 2025·Application pending·0 cites
- 1069US2025264802A1Chemically amplified positive resist composition and resist pattern forming processSHINETSU CHEMICAL CO·Filed 2025·Application pending·0 cites
- 1169US2024427241A1Monomer, polymer, chemically amplified negative resist composition, and pattern forming processSHINETSU CHEMICAL CO·Filed 2024·Application pending·0 cites
- 1268US8623590B2Pattern forming processHATAKEYAMA JUN·Filed 2011·Granted Jan 7, 2014·2 cites·12 claims
- 1368US2024329532A1Acetal modifier, polymer, chemically amplified positive resist composition, and resist pattern forming processSHINETSU CHEMICAL CO·Filed 2024·Application pending·0 cites
- 1467US2025028244A1Acetal modifier, polymer, chemically amplified positive resist composition, and resist pattern forming processSHINETSU CHEMICAL CO·Filed 2024·Application pending·0 cites
- 1567US2025004371A1Chemically amplified positive resist composition and resist pattern forming processSHINETSU CHEMICAL CO·Filed 2024·Application pending·0 cites
- 1666US9086625B2Resist composition and patterning processSHINETSU CHEMICAL CO·Filed 2013·Granted Jul 21, 2015·1 cites·8 claims
- 1764US2024118613A1Chemically amplified positive resist composition and resist pattern forming processSHINETSU CHEMICAL CO·Filed 2023·Application pending·0 cites
- 1864US2024134280A1Polymer, Chemically Amplified Positive Resist Composition, Resist Patterning Process, And Mask BlankSHINETSU CHEMICAL CO·Filed 2023·Application pending·0 cites
- 1963US10457761B2Polymer, resist composition, and pattern forming processSHINETSU CHEMICAL CO·Filed 2017·Granted Oct 29, 2019·0 cites·6 claims
- 2063US6239303B1Silylation of hydroxyl group-containing compoundSHINETSU CHEMICAL CO·Filed 2000·Granted May 29, 2001·3 cites·3 claims
- 2163US2023367214A1Chemically amplified positive resist composition and resist pattern forming processSHINETSU CHEMICAL CO·Filed 2023·Application pending·0 cites
- 2263US2023367213A1Mask blank, resist pattern forming process and chemically amplified positive resist compositionSHINETSU CHEMICAL CO·Filed 2023·Application pending·0 cites
- 2362US2023341775A1Chemically amplified positive resist composition and resist pattern forming processSHINETSU CHEMICAL CO·Filed 2023·Application pending·0 cites
- 2461US2023194986A1Chemically amplified positive resist composition and resist pattern forming processSHINETSU CHEMICAL CO·Filed 2022·Application pending·0 cites
- 2560US12429772B2Chemically amplified resist composition, photomask blank, method for forming resist pattern, and method for producing polymer compoundSHINETSU CHEMICAL CO·Filed 2022·Granted Sep 30, 2025·0 cites·13 claims
- 2660US7135270B2Resist polymer, resist composition and patterning processSHINETSU CHEMICAL CO·Filed 2004·Granted Nov 14, 2006·4 cites·18 claims
- 2759US12271112B2Negative resist composition and pattern forming processSHINETSU CHEMICAL CO·Filed 2022·Granted Apr 8, 2025·0 cites·11 claims
- 2859US10203601B2Tetracarboxylic acid diester compound, polymer of polyimide precursor and method for producing same, negative photosensitive resin composition, patterning process, and method for forming cured filmSHINETSU CHEMICAL CO·Filed 2017·Granted Feb 12, 2019·0 cites·2 claims
- 2958US6835525B2Polymer, resist composition and patterning processSHINETSU CHEMICAL CO·Filed 2002·Granted Dec 28, 2004·4 cites·14 claims
- 3058US2024094635A1Chemically amplified positive resist composition and resist pattern forming processSHINETSU CHEMICAL CO·Filed 2023·Application pending·0 cites
- 3158US2022308451A1Chemically amplified positive resist composition and resist pattern forming processSHINETSU CHEMICAL CO·Filed 2022·Application pending·0 cites
- 3256US8871427B2Positive resist composition and patterning processTANIGUCHI RYOSUKE·Filed 2012·Granted Oct 28, 2014·1 cites·16 claims
- 3356US2016168296A1Polymer, resist composition, and pattern forming processSHINETSU CHEMICAL CO·Filed 2015·Application pending·0 cites
- 3456US2025271760A1Sulfonium salt monomer, polymer, chemically amplified positive resist composition, and resist pattern forming processSHINETSU CHEMICAL CO·Filed 2025·Application pending·0 cites
- 3554US10191373B2Method for producing polymerSHINETSU CHEMICAL CO·Filed 2016·Granted Jan 29, 2019·0 cites·7 claims
- 3654US9040223B2Resist composition, patterning process and polymerSHINETSU CHEMICAL CO·Filed 2013·Granted May 26, 2015·0 cites·11 claims
- 3752US2007264592A1Resist polymer, preparing method, resist composition and patterning processSHINETSU CHEMICAL CO·Filed 2007·Application pending·0 cites
- 3850US2011054133A1Resist polymer, preparing method, resist composition and patterning processSHINETSU CHEMICAL CO·Filed 2010·Application pending·0 cites
- 3944US9551932B2Patterning process and resist compositionSHINETSU CHEMICAL CO·Filed 2013·Granted Jan 24, 2017·0 cites·11 claims
- 4042US2005282083A1Polymer, resist composition and patterning processSHINETSU CHEMICAL CO·Filed 2005·Application pending·0 cites
- 4141US2005031988A1Resist polymer, resist composition and patterning processFiled 2004·Application pending·0 cites
- 4240US9778568B2Positive resist composition and patterning processSHINETSU CHEMICAL CO·Filed 2016·Granted Oct 3, 2017·0 cites·8 claims
- 4340US2012135357A1Polymer, positive resist composition, and patterning processKOBAYASHI TOMOHIRO·Filed 2011·Application pending·0 cites
- 4436US2016229940A1Polymer, resist composition, and pattern forming processSHINETSU CHEMICAL CO·Filed 2016·Application pending·0 cites
- 4535US2013101936A1Positive resist composition and patterning processTANIGUCHI RYOSUKE·Filed 2012·Application pending·0 cites
- 4633US2015268555A1Positive resist composition and patterning processSHINETSU CHEMICAL CO·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →