Inventor · disambiguated record
Kenji Hiruma
Also filed as: HIRUMA KENJI
17 granted patents·3 pending applications·800 citations·filing 1984–2013
96Inventor score
Top patents by PatentIndex Score
20 records- 0197US5332910ASemiconductor optical device with nanowhiskersHITACHI LTD·Filed 1993·Granted Jul 26, 1994·222 cites·24 claims
- 0292US5362972ASemiconductor device using whiskersHITACHI LTD·Filed 1991·Granted Nov 8, 1994·192 cites·48 claims
- 0390US5701019ASemiconductor device having first and second stacked semiconductor layers, with electrical contact to the first semiconductor layerHITACHI LTD·Filed 1995·Granted Dec 23, 1997·97 cites·48 claims
- 0484US4737015AOptical waveguide having a silicon oxi-nitride layerHITACHI CABLE·Filed 1984·Granted Apr 12, 1988·42 cites·17 claims
- 0583US8519378B2Semiconductor light-emitting element array including a semiconductor rodHIRUMA KENJI·Filed 2008·Granted Aug 27, 2013·16 cites·14 claims
- 0680US6356572B1Semiconductor light emitting deviceHITACHI LTD·Filed 1999·Granted Mar 12, 2002·48 cites·23 claims
- 0780US4775980ADistributed-feedback semiconductor laser deviceHITACHI LTD·Filed 1985·Granted Oct 4, 1988·28 cites·11 claims
- 0867US5025751ASolid film growth apparatusHITACHI LTD·Filed 1989·Granted Jun 25, 1991·16 cites·26 claims
- 0967US4784451AWaveguide optical switchesHITACHI LTD·Filed 1985·Granted Nov 15, 1988·27 cites·8 claims
- 1060US4933728ASemiconductor optical deviceHITACHI LTD·Filed 1989·Granted Jun 12, 1990·13 cites·51 claims
- 1160US4720836ADistributed feedback semiconductor laserHITACHI LTD·Filed 1985·Granted Jan 19, 1988·12 cites·6 claims
- 1253US4766092AMethod of growing heteroepitaxial InP on Si using Sn substrate implantationHITACHI LTD·Filed 1986·Granted Aug 23, 1988·18 cites·15 claims
- 1349US5381027ASemiconductor device having a heterojunction and a two dimensional gas as an active layerHITACHI LTD·Filed 1993·Granted Jan 10, 1995·18 cites·18 claims
- 1448US4847573AOptical modulatorHITACHI LTD·Filed 1986·Granted Jul 11, 1989·13 cites·27 claims
- 1547US5351128ASemiconductor device having reduced contact resistance between a channel or base layer and a contact layerHITACHI LTD·Filed 1992·Granted Sep 27, 1994·17 cites·34 claims
- 1644US2011155236A1Nanowire Solar Cell and Manufacturing Method of the SameGOTO HAJIME·Filed 2010·Application pending·0 cites
- 1743US5258631ASemiconductor device having a two-dimensional electron gas as an active layerHITACHI LTD·Filed 1992·Granted Nov 2, 1993·13 cites·11 claims
- 1838US4835583ASemiconductor device having strained superlattice buffer layers with In-doped GaAs substrateHITACHI LTD·Filed 1986·Granted May 30, 1989·8 cites·14 claims
- 1937US2013244146A1Method of manufacturing a semiconductor deviceHITACHI LTD·Filed 2013·Application pending·0 cites
- 2035US2011126891A1Solar Cell Element, Color Sensor and Method of Manufacturing Light Emitting Element and Light Receiving ElementGOTO HAJIME·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →