Inventor · disambiguated record
Keiichiro Kashihara
Also filed as: KASHIHARA KEIICHIRO
31 granted patents·10 pending applications·815 citations·filing 1993–2017
97Inventor score
Files withMITSUBISHI ELECTRIC CORP19RENESAS ELECTRONICS CORP13RENESAS TECH CORP6MATSUSHITA ELECTRIC INDUSTRIAL CO LTD1TSUTSUMI TOSHIAKI1
Top patents by PatentIndex Score
41 records- 0197US5572052AElectronic device using zirconate titanate and barium titanate ferroelectrics in insulating layerMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Nov 5, 1996·221 cites·3 claims
- 0292US5382817ASemiconductor device having a ferroelectric capacitor with a planarized lower electrodeMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Jan 17, 1995·98 cites·8 claims
- 0390US9293496B2Light receiving elements for photoelectric conversion and capacitor elements for charge storing in joined substratesRENESAS ELECTRONICS CORP·Filed 2014·Granted Mar 22, 2016·10 cites·11 claims
- 0489US9450010B2Light receiving elements for photoelectric conversion and capacitor elements for charge storing in joined substratesRENESAS ELECTRONICS CORP·Filed 2016·Granted Sep 20, 2016·5 cites·8 claims
- 0588US5442213ASemiconductor device with high dielectric capacitor having sidewall spacersMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Aug 15, 1995·82 cites·13 claims
- 0686US5519237ASemiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1994·Granted May 21, 1996·43 cites·10 claims
- 0786US5459345ASemiconductor device high dielectric capacitor with narrow contact holeMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Oct 17, 1995·57 cites·7 claims
- 0882US6078072ASemiconductor device having a capacitorMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Jun 20, 2000·49 cites·4 claims
- 0981US5567964ASemiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Oct 22, 1996·59 cites·9 claims
- 1080US6746876B2Capacitor manufacturing method having dielectric formed before electrodeRENESAS TECH CORP·Filed 2002·Granted Jun 8, 2004·27 cites·14 claims
- 1178US7936016B2Semiconductor device and manufacturing method thereofRENESAS ELECTRONICS CORP·Filed 2009·Granted May 3, 2011·6 cites·5 claims
- 1274US7700448B2Manufacturing method of semiconductor deviceRENESAS TECH CORP·Filed 2008·Granted Apr 20, 2010·6 cites·17 claims
- 1373US9437639B2Semiconductor device and manufacturing method thereofRENESAS ELECTRONICS CORP·Filed 2013·Granted Sep 6, 2016·2 cites·4 claims
- 1472US7696050B2Method of manufacturing semiconductor device carrying out ion implantation before silicide processRENESAS TECH CORP·Filed 2006·Granted Apr 13, 2010·3 cites·6 claims
- 1571US6458284B1Method of etching and etch maskMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Oct 1, 2002·14 cites·24 claims
- 1669US5534458AMethod of manufacturing a semiconductor device with high dielectric capacitor having sidewall spacersMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Jul 9, 1996·27 cites·2 claims
- 1765US6278150B1Conductive layer connecting structure and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Aug 21, 2001·30 cites·18 claims
- 1863US5693553ASemiconductor device and manufacturing method of the sameMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Dec 2, 1997·25 cites·3 claims
- 1961US5668041AMethod of manufacturing a semiconductor device having a capacitorMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Sep 16, 1997·18 cites·1 claims
- 2059US8022445B2Method of manufacturing a semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2009·Granted Sep 20, 2011·1 cites·2 claims
- 2159US5753527AMethod of manufacturing a semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1996·Granted May 19, 1998·13 cites·5 claims
- 2255US9048355B2Semiconductor device and manufacturing method thereofRENESAS ELECTRONICS CORP·Filed 2013·Granted Jun 2, 2015·0 cites·16 claims
- 2355US8338247B2Semiconductor device and method of manufacturing sameYAMAGUCHI TADASHI·Filed 2010·Granted Dec 25, 2012·1 cites·7 claims
- 2454US9837459B2Semiconductor device and manufacturing method thereofRENESAS ELECTRONICS CORP·Filed 2016·Granted Dec 5, 2017·0 cites·5 claims
- 2553US9159762B2Semiconductor device and manufacturing method thereofRENESAS ELECTRONICS CORP·Filed 2015·Granted Oct 13, 2015·0 cites·5 claims
- 2653US2018069044A1Semiconductor device and manufacturing method thereofRENESAS ELECTRONICS CORP·Filed 2017·Application pending·0 cites
- 2749US2015380360A1Semiconductor device and manufacturing method thereofRENESAS ELECTRONICS CORP·Filed 2015·Application pending·0 cites
- 2848US5972748ASemiconductor memory device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Oct 26, 1999·7 cites·5 claims
- 2948US2009079007A1Semiconductor device and manufacturing method thereofRENESAS TECH CORP·Filed 2008·Application pending·0 cites
- 3047US2008121950A1Semiconductor deviceRENESAS TECH CORP·Filed 2007·Application pending·0 cites
- 3146US7872314B2Method of manufacturing semiconductor device carrying out ion implantation before silicide processRENESAS ELECTRONICS CORP·Filed 2010·Granted Jan 18, 2011·0 cites·5 claims
- 3245US8148248B2Semiconductor device and manufacturing method thereofTSUTSUMI TOSHIAKI·Filed 2011·Granted Apr 3, 2012·0 cites·3 claims
- 3342US6479856B1Electrode and a capacitor and DRAM containing the sameMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Nov 12, 2002·7 cites·19 claims
- 3442US2003127050A1Chemical vapor deposition apparatusMITSUBISHI ELECTRIC CORP·Filed 2002·Application pending·0 cites
- 3541US2007284671A1Semiconductor device including cmis transistorRENESAS TECH CORP·Filed 2007·Application pending·0 cites
- 3638US2007138573A1Semiconductor device and manufacturing method of the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2006·Application pending·0 cites
- 3737US8343827B2Semiconductor device and manufacturing method of the sameRENESAS ELECTRONICS CORP·Filed 2011·Granted Jan 1, 2013·0 cites·6 claims
- 3837US5652186ASemiconductor device and a method of manufacturing thereofMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Jul 29, 1997·4 cites·2 claims
- 3937US2003009866A1Capacitor manufacturing methodMITSUBISHI ELECTRIC CORP·Filed 2002·Application pending·0 cites
- 4036US2002125524A1Semiconductor device and method of manufacturing sameMITSUBISHI ELECTRIC CORP·Filed 2002·Application pending·0 cites
- 4134US2011037103A1Semiconductor device and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →