Inventor · disambiguated record
Keon-Soo Kim
Also filed as: KIM KEON-SOO
38 granted patents·3 pending applications·995 citations·filing 1989–2017
98Inventor score
Top patents by PatentIndex Score
41 records- 0193US5801416AFET having gate insulating film of nonuniform thickness and asymmetrical source and drain structuresSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Sep 1, 1998·125 cites·11 claims
- 0293US5789293ANonvolatile memory device and manufacturing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Aug 4, 1998·102 cites·2 claims
- 0392US6130838AStructure nonvolatile semiconductor memory cell array and method for fabricating sameSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Oct 10, 2000·79 cites·9 claims
- 0492US5326999ANon-volatile semiconductor memory device and manufacturing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 1992·Granted Jul 5, 1994·104 cites·14 claims
- 0591US6483749B1Nonvolatile memory device having bulk bias contact structure in cell array regionSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Nov 19, 2002·86 cites·21 claims
- 0688US9735014B2Memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Aug 15, 2017·7 cites·16 claims
- 0785US8759224B2Method of forming a pattern structure for a semiconductor deviceKIM JONG-HYUK·Filed 2011·Granted Jun 24, 2014·10 cites·20 claims
- 0885US6027971AMethods of forming memory devices having protected gate electrodesSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Feb 22, 2000·55 cites·30 claims
- 0980US8183152B2Method of fabricating semiconductor deviceSIM JAE-HWANG·Filed 2010·Granted May 22, 2012·5 cites·20 claims
- 1080US5821143AFabrication methods for nonvolatile memory devices including extended sidewall electrodeSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Oct 13, 1998·51 cites·9 claims
- 1178US8642438B2Method of manufacturing an integrated circuit deviceLEE YOUNG-HO·Filed 2011·Granted Feb 4, 2014·4 cites·18 claims
- 1278US5956588AHigh withstand voltage transistor and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Sep 21, 1999·38 cites·5 claims
- 1377US8487383B2Flash memory device having triple well structurePARK YOON-MOON·Filed 2010·Granted Jul 16, 2013·6 cites·20 claims
- 1477US5741719ANonvolatile memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Apr 21, 1998·32 cites·11 claims
- 1577US4972100AData output buffer circuit for byte-wide memorySAMSUNG ELECTRONICS CO LTD·Filed 1989·Granted Nov 20, 1990·24 cites·5 claims
- 1675US8592273B2Method of manufacturing nonvolatile memory deviceSIM JAE-HWANG·Filed 2011·Granted Nov 26, 2013·4 cites·13 claims
- 1775US7339242B2NAND-type flash memory devices and fabrication methods thereofSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Mar 4, 2008·5 cites·19 claims
- 1875US5977584AMemory devices containing dual-string NOR memory arrays thereinSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Nov 2, 1999·34 cites·14 claims
- 1974US8129238B2Semiconductor devices having dual trench, methods of fabricating the same, and electronic system having the sameKIM DONG-WON·Filed 2010·Granted Mar 6, 2012·3 cites·9 claims
- 2074US6071775AMethods for forming peripheral circuits including high voltage transistors with LDD structuresSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Jun 6, 2000·38 cites·18 claims
- 2173US8829644B2Nonvolatile memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Sep 9, 2014·3 cites·7 claims
- 2272US5917218APeripheral circuits including high voltage transistors with LDD structures for nonvolatile memoriesSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Jun 29, 1999·36 cites·14 claims
- 2371US5889305ANon-volatile semiconductor memory device having storage cell array and peripheral circuitSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Mar 30, 1999·24 cites·13 claims
- 2468US5834807ANonvolatile memory device having an improved integration and reduced contact failureSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Nov 10, 1998·21 cites·6 claims
- 2568US5656527AMethod for fabricating a non-volatile semiconductor memory device having storage cell array and peripheral circuit, and a structure thereforeSAMSUNG ELECTRONICS CO LTD·Filed 1991·Granted Aug 12, 1997·23 cites·14 claims
- 2666US5844270AFlash memory device and manufacturing method thereforSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Dec 1, 1998·25 cites·10 claims
- 2765US8772852B2Nonvolatile memory devices including common sourceKIM HONG-SOO·Filed 2008·Granted Jul 8, 2014·3 cites·24 claims
- 2864US7772069B2Methods of forming a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 10, 2010·2 cites·22 claims
- 2963US8519484B2Semiconductor devices having dual trench, methods of fabricating the same, and electronic system having the sameKIM DONG-WON·Filed 2012·Granted Aug 27, 2013·1 cites·13 claims
- 3059US6312990B1Structure nonvolatile semiconductor memory cell array and method for fabricating sameSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Nov 6, 2001·6 cites·18 claims
- 3158US8187935B2Method of forming active region structureLEE YOUNG-HO·Filed 2010·Granted May 29, 2012·1 cites·9 claims
- 3257US6144064ASplit-gate EEPROM device having floating gate with double polysilicon layerSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Nov 7, 2000·15 cites·5 claims
- 3351US10297451B2Memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted May 21, 2019·0 cites·20 claims
- 3449US9087711B2Pattern structure and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jul 21, 2015·0 cites·13 claims
- 3549US2014138759A1Integrated circuit device having a resistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Application pending·0 cites
- 3646US5747848ANonvolatile memory devices including arrays of discrete floating gate isolation regionsSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted May 5, 1998·11 cites·8 claims
- 3741US8436412B2Pattern structure and method of forming the samePARK YOON MOON·Filed 2010·Granted May 7, 2013·0 cites·5 claims
- 3839US6056783AMethod for designing cell array layout of non-volatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted May 2, 2000·7 cites·7 claims
- 3939US5888871AMethods of forming EEPROM memory cells having uniformly thick tunnelling oxide layersSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Mar 30, 1999·5 cites·17 claims
- 4037US2010317169A1Methods of fabricating non-volatile memory devices using inclined ion implantationSAMSUNG ELECTRONICS CO LTD·Filed 2010·Application pending·0 cites
- 4137US2006138559A1Flash memories having at least one resistance pattern on gate pattern and methods of fabricating the sameLEE DONG-JUN·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →